300JJS Search Results

Contextual Info: RECTIFIERS SES5701 SES5702 SES5703 High Efficiency, 20A FEATURES • Low Forward Voltage • Fast Switching • Low Thermal Resistance • High Surge Capability • Mechanically Rugged DO-4 Package • Reverse Polarity Available DESCRIPTION The SES, super-fast recovery, rectifiers are

1N6392 JANTX

Abstract: 75HQ045 1N6392 JANTX1N6392 1N6392 75HQ045 DO-203AB JAN1N6392 JANTXV1N6392
Contextual Info: International HH Rectifier 75S1 JAN1N6392 JANTX1N6392 JANTXV1N6392 [ M IL-S-19500/554] SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Characteristics 'f a v Rectangular Description/Features 1N6392 Units 60* A 45* V waveform V RWM 'fs m 60Hz

Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ZDM4206N ISSUE 1 - NOVEMBER n, OO I E ] Qi Di o r m s, d2 I r~ _□ g2 L_L_ I 1 Si PARTMARKING DETAIL - M4206N ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SAMSUNG ELE CT RONICS I N C MMBT4403 42E D El 7 ^ 4 1 4 2 GDQTQHS 1 H S M G K PNP EPITAXIAL SILICON TRANSISTOR H 7 -V 7 -I5 SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Coliector-Emltter Voltage Emitter-Base Voltage

Equivalent IRF 44

Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

2N6658

Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

Mosfet K 135 To3

Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432
Contextual Info: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE | ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness

Contextual Info: 43 32271 H A Q0S413S R R ?b ô • HAS I S IR F F 1 2 0 /1 2 1 /1 2 2 /1 2 3 IR F F 1 2 0 R /1 2 1 R /1 2 2 R /1 2 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 0 5 A F • 5.0A and 6.0A, 80V - 100V • rDS(on = 0 .3 0H and 0 .40H

FR9120

Abstract: 9121
Contextual Info: IRFR9120/9121 IRFU9120/9121 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area

30CPQ045

Abstract: 30cpq035
Contextual Info: PD-2.297 fcif.amJiHn.rt oJ 30CPQ035 3ocpqo 4o ntematkmal M Rectifier 30CPQ045 SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features The 30CPQ. center tap Schottky rectifier has been opti­ mized or very low forward voltage drop, with moderate

POWER MOSFET Rise Time 1000V NS

Abstract: MBG40H-3 fast recovery diode 1000v 10A opto fet MOSFET 800V 10A 100U
Contextual Info: J37/A M icropac Microcircuits Division MBG40H-3 Micropac Power MOSFET • • • • • • • Each FET VDSS = 1000V Half Bridge Driver Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Hermetically Sealed

VN0606M

Contextual Info: VN0606M B S ilic o n ix 60VMOSPOWER N-Channel Enhancement Mode This power FET is designed especially for low power high frequency inverters, interface to CMOS and TTL logic, and line drivers. Product Summary FEATURES • ■ ■ ■ ■ High Input Impedance

IRF020

Abstract: FR024 FR020 10MC11 fr 024
Contextual Info: N-CHANNEL POWER MOSFETS IRFR020/22/24/25 FEATURES • • • • • • • Lower R d s ON Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input cap acitance Extended safe operating area Improved high tem perature reliability

f9520

Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability

IRL630

Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRL630/IRL631 FEATURES • L o w e r R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF044

Contextual Info: IRF044 SEIN/IE LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET . _ 3ajsg.S73i 30.^0 (1 ’ 97) 30.15(i.iaf) i r.13(O.C75I ! (U.&55) I TS(0.tsi) V DSS 60V 1D(cont) 44A 7 è 1'; 2- dia. 2OK». ,-J ^D S (on) - â à

IRF34

Abstract: IRF340 IRF341 IRF342 IRF343 6Z64
Contextual Info: - 7 964 142 S A M S U N G S E M I C O N D U C T O R Tfi ¡>F| 7 ^ 4 1 4 3 DGDSin t, | INC 9 8 D O 51 1 9 . - D T -3 f-'/3 N-CHANNEL POWER MOSFETS IRF340/341/342/343 FEATURES • L o w R DS on • Improved inductive ruggedness Fast switching times .

IRF243

Abstract: IRF240 IRF242 mosfet IRF240 IRF241
Contextual Info: 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R \ Tfl DE 17Tbm4S DDOSCm 4 | IRF240/241/242/243 IN C 98 D 0 5 0 9 9 - — D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times

IRFZ22 mosfet

Abstract: IRFZ25 IRFZ24 IRFZ20 IRFZ2 IRFZ22 irfz24 mosfet
Contextual Info: SAMSUNÛ ELECTRONICS INC b4E I> • 7 ^ 4 1 4 2 001244G Oâb IRFZ24/Z25 IRFZ20/Z22 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • SM6K TO-220 Lower Rds on Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure

BCV72

Abstract: BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 FMMT4125 transistor dg sot-23 ferranti
Contextual Info: I t FERRANTI llsemiconductorsL FMMT4125 PNP Silicon Planar General Purpose S w itch in g T ransistor D E S C R IP T IO N T h is device is intended for use in sm a ll and m e diu m sign a l a m p lificatio n a p p lica tio n s from d.c. to radio requencies.

FDV302P

Contextual Info: g A Ig g H IU D SEMICONDUCTOR tm FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhanœmenî mode field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is

irf630 equivalent

Abstract: irf630 irf640 irf630 mtm5n35 MTM5N40 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= P fi c i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r ' s ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i

SN1000

Contextual Info: PD-2.039C International S Rectifier 3o f q . s e r ie s SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features Characteristics 30 F Q . Units fp AV Rectangular waveform 30 A 35 to 45 V lFSM @ tp -5 (js s in e 9600 A VF 0.54 V

IRF740

Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area