Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRL630 Search Results

    IRL630 Datasheets (33)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRL630
    International Rectifier HEXFET Power Mosfet Original PDF 283.06KB 8
    IRL630
    International Rectifier HEXFET Power MOSFET Original PDF 147.25KB 8
    IRL630
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRL630
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB Original PDF 9
    IRL630
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 155.04KB 6
    IRL630
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 200V, 9A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    IRL630
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 41.32KB 1
    IRL630
    Unknown FET Data Book Scan PDF 46.6KB 1
    IRL630
    Samsung Electronics N-Channel Logic Level MOSFETS Scan PDF 248.06KB 5
    IRL630A
    Fairchild Semiconductor Advanced Power MOSFET Original PDF 227.37KB 7
    IRL630A
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 155.35KB 6
    IRL630A_NL
    Fairchild Semiconductor 200V N-Channel Logic Level A-FET / Substitute of IRL630 Original PDF 227.36KB 7
    IRL630L
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 41.32KB 1
    IRL630PBF
    International Rectifier HEXFET Power MOSFET Original PDF 1.36MB 8
    IRL630PBF
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB Original PDF 9
    IRL630PBF-BE3
    Vishay Siliconix MOSFET N-CH 200V 9A TO220AB Original PDF 2.33MB
    IRL630S
    International Rectifier HEXFET Power MOSFET Original PDF 172.34KB 8
    IRL630S
    International Rectifier HEXFET Power Mosfet Original PDF 309.52KB 8
    IRL630S
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRL630S
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original PDF 9
    SF Impression Pixel

    IRL630 Price and Stock

    Select Manufacturer

    International Rectifier IRL630

    Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRL630 1,006
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components () IRL630 116
    • 1 $5.58
    • 10 $5.58
    • 100 $3.44
    • 1000 $3.44
    • 10000 $3.44
    Buy Now
    IRL630 11
    • 1 $5.58
    • 10 $2.79
    • 100 $2.79
    • 1000 $2.79
    • 10000 $2.79
    Buy Now

    International Rectifier IRL630STRL

    Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics () IRL630STRL 800 1
    • 1 $1.65
    • 10 $1.24
    • 100 $1.02
    • 1000 $0.62
    • 10000 $0.62
    Buy Now
    IRL630STRL 755
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components () IRL630STRL 1,862
    • 1 $1.75
    • 10 $1.75
    • 100 $1.75
    • 1000 $0.81
    • 10000 $0.73
    Buy Now
    IRL630STRL 640
    • 1 $2.20
    • 10 $2.20
    • 100 $2.20
    • 1000 $0.71
    • 10000 $0.71
    Buy Now
    IRL630STRL 604
    • 1 $2.46
    • 10 $2.46
    • 100 $2.46
    • 1000 $1.01
    • 10000 $1.01
    Buy Now
    Component Electronics, Inc IRL630STRL 42
    • 1 $1.15
    • 10 $1.15
    • 100 $0.87
    • 1000 $0.75
    • 10000 $0.75
    Buy Now

    Vishay Intertechnologies IRL630SPBF

    Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRL630SPBF 420
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    ComSIT USA IRL630SPBF 2,505
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Flip Electronics IRL630SPBF 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Fairchild Semiconductor Corporation IRL630A

    Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRL630A 11
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components IRL630A 1
    • 1 $5.62
    • 10 $5.62
    • 100 $5.62
    • 1000 $5.62
    • 10000 $5.62
    Buy Now

    International Rectifier IRL630S

    TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRL630S 327
    • 1 $1.88
    • 10 $1.88
    • 100 $1.88
    • 1000 $0.94
    • 10000 $0.94
    Buy Now

    IRL630 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRL630A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive 0.4Q CO > a ♦ Rugged Gate Oxide Technology II ^DS on = ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan
    irl630ao-220 PDF

    Contextual Info: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original
    irl630ssihl630s2002/95/eco-263+111-mar-11 PDF

    Contextual Info: IRL630S_RC, SiHL630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    irl630ssihl630san6091561m+41405m7558m9961m8166m PDF

    Contextual Info: IRL630A Advanced Power MOSFET FEATURES b v dss Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V OS = 200V ■ Lower RDS(0N) : 0.335 « (Typ.) 0.4 O


    OCR Scan
    irl630a003b32flo-2207tb4142+1dd3b33d PDF

    Contextual Info: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description


    Original
    irl630o-22008-mar-07 PDF

    IRF1010

    Abstract: IRL630
    Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V


    Original
    irl630o-220a9246irf1010 PDF

    IRL630A

    Contextual Info: $GYDQFHG 3RZHU 026 7 IRL630A FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    Original
    irl630ao-220 PDF

    IRL630

    Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRL630/IRL631 FEATURES • L o w e r R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    irl630/irl631o-220irl630irl631 PDF

    Contextual Info: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    irl630sihl630o-220ab2002/95/ec+22011/65/eu12-mar-12 PDF

    Contextual Info: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original
    irl630ssihl630s2002/95/eco-263+111-mar-11 PDF

    IRF1010

    Abstract: IRL630
    Contextual Info: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description


    Original
    irl630o-220irf1010 PDF

    Contextual Info: $GYDQFHG 3RZHU 026 7 IRL630 FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    Original
    irl630o-220 PDF

    AN-994

    Abstract: IRL630S SMD-220
    Contextual Info: PD - 9.1254 IRL630S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at VGS = 4V & 5V 150°C Operating Temperature VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A


    Original
    irl630ssmd-22012-mar-07an-994 PDF

    Contextual Info: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    irl630sihl6302002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: PD- 95590 IRL630SPbF • Lead-Free Document Number: 91304 07/20/04 www.vishay.com 1 IRL630SPbF Document Number: 91304 www.vishay.com 2 IRL630SPbF Document Number: 91304 www.vishay.com 3 IRL630SPbF Document Number: 91304 www.vishay.com 4 IRL630SPbF Document Number: 91304


    Original
    irl630spbf12-mar-07 PDF

    Contextual Info: PD- 95756 IRL630PbF • Lead-Free Document Number: 91303 8/24/04 www.vishay.com 1 IRL630PbF Document Number: 91303 www.vishay.com 2 IRL630PbF Document Number: 91303 www.vishay.com 3 IRL630PbF Document Number: 91303 www.vishay.com 4 IRL630PbF Document Number: 91303


    Original
    irl630pbfo-220ab12-mar-07 PDF

    diode marking code 421

    Contextual Info: PD- 95590 IRL630SPbF • Lead-Free www.irf.com 1 07/20/04 IRL630SPbF 2 www.irf.com IRL630SPbF www.irf.com 3 IRL630SPbF 4 www.irf.com IRL630SPbF www.irf.com 5 IRL630SPbF 6 www.irf.com IRL630SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original
    irl630spbfeia-418diode marking code 421 PDF

    Contextual Info: IRL630 A d v a n c e d Power MOSFET FEATURES 200 V 0.4Q > Rugged G ate O xide T e ch n o lo g y CO ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge


    OCR Scan
    irl630o-220 PDF

    IRL630S

    Abstract: Diode 3D 54
    Contextual Info: IRL630S A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 9 A 200 V 0.4Î2 ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    OCR Scan
    irl630sdiode 3d 54 PDF

    IRL630A

    Abstract: diode rg62 018
    Contextual Info: IRL630A A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.4Î2 ♦ Rugged Gate Oxide Technology lD = 9 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan
    irl630adiode rg62 018 PDF

    SiHL630S

    Contextual Info: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original
    irl630ssihl630ssmd-22018-jul-08 PDF

    Contextual Info: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    irl630sihl6302002/95/eco-220ab+22011/65/eujs709a PDF

    1RL630A

    Abstract: IRL630
    Contextual Info: IRL630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVDSs Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A M ax. @ VDS= 200V


    OCR Scan
    irl630ao-2201rl630airl630 PDF

    SIHL630S

    Abstract: IRL630S SiHL630S-E3
    Contextual Info: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original
    irl630ssihl630so-26318-jul-08+1sihl630s-e3 PDF