CIB414E Search Results

Contextual Info: S A MS UN G E L E C T R O N I C S INC b?E ]> 7^142 CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance RAM access tim e tRAC • • • • • • •

IR 9024

Abstract: U9024 FR90 U9020 9025 IRFR9020 irfu9022 UM6264D-70LL ISE Electronics 9024
Contextual Info: SAMSUNG ELECTRONICS INC b4E D 7 ^ 4 1 4 2 0ül23bS 57S • SÏ1GK ■ IRFR9020/22/24/25 IRFU9020/22/24/25 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

f0035

Abstract: RF amplifer SMP-13203 m42 BATTERY SCHEMATIC
Contextual Info: S ELECTRONICS M P Samsung Microwave Sem iconductor - 1 3 2 S iflQ lC 3 Q jg s Low Noise Amplifer 1.8 - 3.0GHz Description Features The SMP-13203 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC) housed in a low-cost Small Outline Integrated Circuit

Contextual Info: SAMSUNG S E M I C ON DUCTOR INC D2 KS54HCTLS /? /¡T */ KS74HCTLS U U D E i 7Tt,414E 00DL:S73 Octal 3-State Bus Transceivers with Registers 7-", s ' a. ' 3 j Preliminary Specifications FEATURES • • • • • • • • • • DESCRIPTION . Independent Registers and Enables for A and B Buses

Contextual Info: SAMSUNG ELECTRONICS INC b7E » • 7 ^ b m 4 2 DOlblSl flôfi KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its