2T3 TRANSISTOR Search Results

Contextual Info: • 7TSTE37 0ü 4b l03 2T3 ■ S G T H _ rZ 7 SGS-THOMSON Ä 7# « fô m io * ! S T K 1 7 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ . ■ ■ ■ ■ . TYPE V dss RDS on Id STK17N10 100 V < 0.11 n 17 A TYPICAL RDS(on) = 0.09 Q

Contextual Info: HARRIS SEMICOND SECTOR SflE » H a r r is U U SEM ICO N D UCTOR REGISTRATION PENDING Currently Available as FRK150 D, R, H • 43D2271 0045725 2T3 « H A S 2N7291D, 2N7291R 2N7291H Radiation Hardened N-Channel Power MOSFETs December1992 Features Package

2SC3858

Contextual Info: SANKEN ELECTRIC CO LT» SSE D • 7^0741 □ D D D t170 2T3 « S A K J Silicon N P N Triple Diffused Planar 2SC3858 -F 3 S r ß ☆ Com plem en t to type 2 S A 1 4 9 4 Application Example : e Outline Drawing 3 . . M T -2 0 0 A u d io and General Purpose

BFW11

Abstract: bfw11 equivalent BFW10 in drain resistance
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

Contextual Info: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE

Contextual Info: TIP34; A; B; C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _J K SILICON POWER TRANSISTORS P-N-P epitaxial-base power transistors in the plastic SO T -93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are

Contextual Info: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9

BSW68A 1990

Abstract: bsw68a
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO

Contextual Info: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors

2508DF

Abstract: bu2508df
Contextual Info: N A PIER P H I L I P S / D I S C R E T E bbS3T31 0026357 673 * A P X b'lE D Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

supersot-3

Abstract: 2T3 transistor NDS335N FR 014 S0113D
Contextual Info: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

TN0606N7

Abstract: 2T-3
Contextual Info: G à S u p e r te x in c TN0606 TN0610 . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R q S ON (max) Order Num ber / Package f b v dgs V GS(ttl) i B V DSS/ (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt 60V 1.5Q

vertical IC tv crt

Abstract: 2SC4566 2SA1751 2SC3790 2SA1352 2SA1380 2SA1381 2SA1875 2SC3416 2SC3502
Contextual Info: Continued fra.71 D.-ewouS oage Absolute maximum ratings Electrical characteristics Ta = 25 Package V tfiu VcEO (V ' (V) Vcao • (V) ; le (A) Pc (W) T, (C ) ICBO max @ Vcb f0 ,¡«Cl Ic b o max Vcb h fE @ Vce - lc tlFE Ci . *T Vce ■ lc Vce Ic tr Vce 2SC4827

CM300DY-12E

Abstract: CM300DY-12 K071 BP107
Contextual Info: bME D • 72^21 Q00b752 m 41D « P R X CM300DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.14 powerex inc Dual IGBTMOD _ . . . , ,

Contextual Info: CNX38U J \ _ O P T O C O U P LE R O ptically coupled isolator consisting o f an infrared emitting G a A s diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits. Features

Contextual Info: SN55500E, SN65500E, SN75500E AC PLASMA DISPLAY DRIVERS SLDS013B-D2471, DECEMBER 1 9 6 5 - REVISED MAY 1993 I I I • • • • ' • • • • Controls 32 Electrodes 100-V Totem-Pole Outputs Low Standby Power Consumption All Outputs Contain Sink and Source

Contextual Info: CS-5203A Features Description The CS-5203A series of linear regu­ lators provides 3A at adjustable and fixed voltages of 1.5V, 3.3V, and 5V with an accuracy of + / - 1%. The adjustable version uses two external resistors to set the output voltage within a 1.25V to 18V

Contextual Info: 3.3cm 1.3-inch Black-and-White LCD Panel D escription The LCX016AL is a 3.3cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with a built-in peripheral driving circuit. Use of three LCX016AL panels provides a full-color representation. The striped

5203A

Abstract: IN4002 LT1085 CS-5203A-X
Contextual Info: CS-5203A -1,-2,-3,-5 CS-5203A-1,-2,-3,-5 3A Adjustable, and Fixed 1.5V, 3.3V, and 5V Linear Regulators Description The CS-5203A series of linear regulators provides 3A at adjustable and fixed voltages with an accuracy of ±1% and ±2% respectively. The adjustable version uses two

Contextual Info: SONY CXA3179N Preliminary IF Amplifier for M-ary FSK Pagers Description The CXA3179N is a low current consumption FM IF amplifier which employs the newest bipolar process. It is suitable for M-ary FSK pagers. Features • Low current consumption : 1.1 mA typ. at Vcc=1.4 V

SIEMENS tle 420

Abstract: 100nf electrolytic Capacitor 0201 TLE 4726 G IED01655 IED01656 IED01657 IEP00898 Q67006-A9297 diode 5dt D22 diode marking code
Contextual Info: SIEM EN S 2-Phase Stepper-Motor Driver TLE 4726 Overview Bipolar 1C Features • 2 x 0.75 A / 50 V outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Low standby-current drain • Full, half, quarter, mini step

Contextual Info: 3A Adjustable, and Fixed 1.5V, 3.3V, and 5V Linear Regulators Description Features The CS-5203A series of linear regu­ lators provides 3A at adjustable and fixed voltages with an accura­

Contextual Info: L S I COMPUTER SYSTEMS S4E D S304b0b 0001021 5^4 • LSC LS7055 LS7056 LSI/CSI LI -V 5 ~ -,2 Revised July 1989 6 DECADE PREDETERMINING UP/DOWN COUNTER with 3 presettable storage registers FEATURES: • Single Power Supply Operation +4.75 to +15 Volts • Preset, Presignal and Mainsignal Store

atmel 819

Abstract: atmel h 208 atl80 atmel 823
Contextual Info: ATL80 Features * 0.8 |i drawn gate length combined with triple level metal provides outstanding speed/power performance * Design translation of existing ASIC, PLD and FPGA designs provide for easy alternate sourcing with equivalent performance * All ATL80 arrays can operate at 5.0 volts and 3.3 volts for lowpower applications