2T3 TRANSISTOR Search Results

SC26C562

Abstract: SC26C562A8A SC26C562C1A SC26C562C1N SC68C562 SCN26562 Dual Output Universal IR Remote Switch Chip
Contextual Info: • hb53TEM ODTMBTM 2T3 « S I C 3 Philips Semiconductors Data Communications Products Product specification CMOS dual universal serial communications controller CDUSCC DESCRIPTION SC26C562 • Watchdog timer The Philips Semiconductors SC26C562 Dual Universal Serial

Contextual Info: • 7TSTE37 0ü 4b l03 2T3 ■ S G T H _ rZ 7 SGS-THOMSON Ä 7# « fô m io * ! S T K 1 7 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ . ■ ■ ■ ■ . TYPE V dss RDS on Id STK17N10 100 V < 0.11 n 17 A TYPICAL RDS(on) = 0.09 Q

Contextual Info: HARRIS SEMICOND SECTOR SflE » H a r r is U U SEM ICO N D UCTOR REGISTRATION PENDING Currently Available as FRK150 D, R, H • 43D2271 0045725 2T3 « H A S 2N7291D, 2N7291R 2N7291H Radiation Hardened N-Channel Power MOSFETs December1992 Features Package

2SC3858

Contextual Info: SANKEN ELECTRIC CO LT» SSE D • 7^0741 □ D D D t170 2T3 « S A K J Silicon N P N Triple Diffused Planar 2SC3858 -F 3 S r ß ☆ Com plem en t to type 2 S A 1 4 9 4 Application Example : e Outline Drawing 3 . . M T -2 0 0 A u d io and General Purpose

BFW11

Abstract: bfw11 equivalent BFW10 in drain resistance
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

Contextual Info: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE

Contextual Info: TIP34; A; B; C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _J K SILICON POWER TRANSISTORS P-N-P epitaxial-base power transistors in the plastic SO T -93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are

t559

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9

Contextual Info: TLP120JLP120-4 GaAs IRED & PHOTO-TRANSISTOR TLP120 P R O G R A M M A BL E CONTROLLERS U nit in mm A C/DC-INPUT M O D ULE TELEC O M M U N IC A TIO N The TOSHIBA MINI FLAT COUPLER TLP120 and TLP120-4 is a small outline coupler, suitable for surface m ount assembly.

BSW68A 1990

Abstract: bsw68a
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO

Contextual Info: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors

2508DF

Abstract: bu2508df
Contextual Info: N A PIER P H I L I P S / D I S C R E T E bbS3T31 0026357 673 * A P X b'lE D Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

IRGAC50F

Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50
Contextual Info: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

j310 equivalent

Abstract: J310 J310 applications J309 Transistor J310 J308 MCD221
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEA TU R ES J308; J309; J310 P IN N IN G - T O -92 • Low noise PIN SYM BOL • Interchangeability of drain and source connections 1 g gate • High gain. 2 s source 3

BFG591 amplifier

Abstract: BFG591 equivalent of SL 100 NPN Transistor transistor fp 1016 2T3 transistor BFG591 Application Notes sl 100 Transistor Equivalent list SL 100 NPN Transistor DIN45004B NPN power transistor spice
Contextual Info: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA TUR ES D ES C R IPTIO N • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin S O T 223 package. • Low noise figure • High transition frequency

BFG591

Contextual Info: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA TUR ES D ES C R IPTIO N • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin S O T 223 package. • Low noise figure • High transition frequency

supersot-3

Abstract: 2T3 transistor NDS335N FR 014 S0113D
Contextual Info: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

Contextual Info: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor

TN0606N7

Abstract: 2T-3
Contextual Info: G à S u p e r te x in c TN0606 TN0610 . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R q S ON (max) Order Num ber / Package f b v dgs V GS(ttl) i B V DSS/ (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt 60V 1.5Q

vertical IC tv crt

Abstract: 2SC4566 2SA1751 2SC3790 2SA1352 2SA1380 2SA1381 2SA1875 2SC3416 2SC3502
Contextual Info: Continued fra.71 D.-ewouS oage Absolute maximum ratings Electrical characteristics Ta = 25 Package V tfiu VcEO (V ' (V) Vcao • (V) ; le (A) Pc (W) T, (C ) ICBO max @ Vcb f0 ,¡«Cl Ic b o max Vcb h fE @ Vce - lc tlFE Ci . *T Vce ■ lc Vce Ic tr Vce 2SC4827

CM300DY-12E

Abstract: CM300DY-12 K071 BP107
Contextual Info: bME D • 72^21 Q00b752 m 41D « P R X CM300DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.14 powerex inc Dual IGBTMOD _ . . . , ,

LF353

Abstract: T-099
Contextual Info: n r z S G S -TH O M SO N H O »iüH M sM (gI LF153 LF253 - LF353 WIDE BANDWIDTH DUAL J-FET OPERATIONAL AMPLIFIERS LOW POWER CONSUMPTION WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION

Contextual Info: MOTOROLA Order this document by MMBD2835LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diodes MMBD2835LT1 M M B D 2836LT1 CATHODE H ANODE 3 -N o1 02 CATHODE CASE 318-08, STYLE 12 SOT-23 TO-236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage