2SK3441 Search Results

2SK3441

Contextual Info: 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.)

Contextual Info: TEN •i 8 TOSHIBA 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm • • • • Low drain-source ON resistance: Rpg (on) = 4 .5 m£2 (typ.) High forward transfer admittance: | Yfs I = 80 S (typ.)

2sk3441

Contextual Info: 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Applications Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.)

2SK3441

Abstract: k3441
Contextual Info: 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) · High forward transfer admittance: |Yfs| = 80 S (typ.)

2SK3441

Abstract: k344
Contextual Info: 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Applications Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.)

K3441

Abstract: 2SK3441
Contextual Info: 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Applications Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.)

2SK3441

Abstract: k3441
Contextual Info: 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Applications Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK1603

Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1

TPD4112K

Abstract: FG- SOT23-6 FG SOT23-6 LED sot23-6 ic 3845 JDP2S08SC JDV2S25SC JDV2S26SC JDV2S27SC JDV2S28SC
Contextual Info: C O N T E N T S 今月の新製品情報 東芝半導体情報誌アイ 2004年12月号 12 VOLUME 149 白色LEDドライバIC.2 超小型PINダイオード バリキャップダイオード.2

tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

K2057

Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Contextual Info: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series

2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3

TPCA8077

Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

2sk3626

Abstract: TO220SM 2SJ619 2SK2986 2SK3387 2SK3389 2SK3441 2SK3443 2SK3444 2SK3445
Contextual Info: 2003-3 製品カタログ TFPシリーズ 2003-3 BCJ0018A BCJ0018A 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故 障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and