2SK3147 Search Results
2SK3147 Datasheets (13)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SK3147 | Hitachi Semiconductor | Silicon N Channel MOS FET High Speed Power Switching | Original | 56.32KB | 9 | ||
| 2SK3147 | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 89.51KB | 9 | ||
| 2SK3147(L) | Hitachi Semiconductor | Power switching MOSFET | Original | 56.32KB | 9 | ||
| 2SK3147(L) | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 89.53KB | 9 | ||
| 2SK3147L | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 56.32KB | 9 | ||
| 2SK3147L-E | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 89.52KB | 9 | ||
| 2SK3147(S) | Hitachi Semiconductor | Power switching MOSFET | Original | 56.32KB | 9 | ||
| 2SK3147S | Kexin | N-Channel MOSFET | Original | 42.2KB | 1 | ||
| 2SK3147(S) | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 89.53KB | 9 | ||
| 2SK3147S | Renesas Technology | SMD, High Speed Power Amplifier, 100V 5A 20W, MOS-FET N-Channel enhanced | Original | 90.48KB | 14 | ||
| 2SK3147S | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 56.32KB | 9 | ||
| 2SK3147S | TY Semiconductor | N-Channel MOSFET - TO-252 | Original | 123.4KB | 1 | ||
| 2SK3147STL-E | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 89.51KB | 9 |
2SK3147 Price and Stock
Renesas Electronics Corporation 2SK3147S-EStock |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK3147S-E | 2,778 |
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Get Quote | |||||||
2SK3147 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SK3147SContextual Info: IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 |
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2sk3147so-252 | |
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Contextual Info: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK-2 II |
OCR Scan |
2sk3147 | |
Hitachi DSA00280Contextual Info: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition Feb. 1999 Features • Low on-resistance R DS =0.1 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 |
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2sk3147ade-208-731d-85622hitachi dsa00280 | |
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Contextual Info: Transistors IC SMD Type Product specification 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 |
Original |
2sk3147so-252 | |
Hitachi DSA002780Contextual Info: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731(Z) 1st. Edition December 1998 Features • • • Low on-resistance R DS =0.1 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline DPAK–2 |
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2sk3147ade-208-731d-85622hitachi dsa002780 | |
2SK3147
Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
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2sk3147rej03g1072-0200ade-208-731prss0004zd-b+3 | |
2SK3147
Abstract: Hitachi DSA00239
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2sk3147ade-208-731hitachi dsa00239 | |
Hitachi DSA002749Contextual Info: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching 1st. Edition February 1999 Features • • • Low on-resistance RDS = 0.1 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D |
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2sk3147hitachi dsa002749 | |
Hitachi DSA00279Contextual Info: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline |
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2sk3147ade-208-731hitachi dsa00279 | |
2SK3147
Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
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2sk3147rej03g1072-0300prss0004zd-bprss0004zd-c+2 | |
2sk3155
Abstract: 2sk3148 Fuel injection
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OCR Scan |
o-220o-220fm2sk31472sk3150+7 | |
2SK3235
Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
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hat2038r/hat2038rjade-208-666chat2038rhat2038rj+12 | |
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Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic, |
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
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2sc45372sc4542sc45912sc4592+16 | |
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
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2sc5998c51392sc52472sc5907+16 | |
2SK3147
Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
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2sk31472sk3147l-e2sk3147stl-eprss0004zd-b+1 | |
2SK3147
Abstract: 2SK3147L
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2sk31472sk3147l | |
hd155080tf
Abstract: eb5 SMD smd code eb5 SH7051 eb6 smd transistor Hitachi audio mosfet application SH7055F hd video downconverter hd155080 nissei capacitors
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h8s/2623sh7055fsh7709f-78148+10 | |
rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
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rej01g0001-0400rjh3047rjh3077rjp3047+7 | |
lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
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hd49323aha12134aha12141nha12155n+16 | |
2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
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3sk3093sk3173sk318bb101c+16 | |
rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
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rej16g0001-1900rjp3053rjp3063rjp6065+7 | |
1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
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24empbrc124etpbrc143etpbrc144ecm+16 | |
74ls111
Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00
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switchin2sc35122sc35132sc37932sc3867+16 | |