2SK2796 Search Results

2SK2796L

Abstract: 2SK2796S Hitachi DSA00117
Contextual Info: 2SK2796L, 2SK2796S Silicon N Channel MOS FET High Speed Power Switching Target Specification 1st. Edition October 1996 Features • • • Low on-resistance RDS on = 0.12Ω typ. 4V gate drive devices. High speed switching Outline DPAK 4 4 D 2 1 2 G 1 3

Contextual Info: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(oii) = 0.12Í2 typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 Í I 1. 2. 3. 4. G ate Drain S ource Drain ADE-208-534C (Z)

2SK2796

Abstract: Hitachi DSA00117
Contextual Info: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 3 G S 1 2

Contextual Info: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A

2SK2796STL

Abstract: 2SK2796 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C
Contextual Info: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1034-0500 (Previous: ADE-208-534C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004ZD-A

2SK2796

Abstract: Hitachi DSA00238
Contextual Info: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 3 G S 1 2

Hitachi DSA002749

Contextual Info: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK| 1 4 4 D 1 2 3 G

Contextual Info: IC SMD Type Product specification 2SK2796S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.12 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28

2SK2796S

Contextual Info: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2796S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.12 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1

ADE-208-534

Abstract: Hitachi DSA002780
Contextual Info: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534 A 2nd. Edition Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline 2SK2796 (L), 2SK2796 (S) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

2SK2796

Abstract: 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

2SK2728

Abstract: 2sk2729
Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5