2SK1011
Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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2SK1917
Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266
Contextual Info: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee
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2sk1917-m032tfsc-6720kil+42sk1917sic power mosfetups electrical symbolsa2266
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2sk1507
Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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2sk1221-01t02202sk1917-01mt0220f15+102sk1007-012sk1009-012sk1011-012sk1101-01m2sk15072sk1018-012sk10182sk1820-012sk9562sk1013-01
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2SK1917-M
Contextual Info: 2SK1917-M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET ^ • Features SERIES ■ Outline Drawings • High speed sw itching • Low on-resistance • N o secondary breakdow n • Low driving pow er • High voltage • V gs = ± 3 0 V Guarantee
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2SK1012
Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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2sk1221-01t02202sk1917-01mt0220f15+132sk1007-012sk1009-012sk1011-012sk1101-01m2sk10122sk10152sk1018-012sk10822sk12112sk15452sk10182sk1081-012sk1102
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2SK1917-M
Abstract: 25N20
Contextual Info: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T ^ N-CHANNEL SILICON POWER MOS-FET • Features SER IE S ■ Outline Drawings • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p ow er • High voltage • Vc,s = ± 3 0 V G uarantee
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CFL UPS 45 W
Contextual Info: 2SK1917-MR FUJI POWER MOS-FET N-CNANNEL SILICON POWER MOS-FET F - I I • Features S E R I E S ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gs = ± 3 0 V Guarantee
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2SK1221-01
Contextual Info: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01
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2SK1917
Contextual Info: 2SK1917-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-II SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54
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A2266
Abstract: schematic symbols UPS 2SK1917-M ups electrical symbols
Contextual Info: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T ^ N-CHANNEL SILICON POWER MOS-FET • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee
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2sk1917-msc-6720kila2-266+3a2266schematic symbols upsups electrical symbols
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TFK u 269
Abstract: tfk 731 2SK1917-MR T151 3 TFK 140 TFK diode
Contextual Info: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications
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2sk1917-mrsc-67tfk u 269tfk 731+3t1513 tfk 140tfk diode
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str f 6467
Abstract: STR 6467 2SK191 9vtfr 2SK1917-MR T151
Contextual Info: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications
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2sk1917-mrsc-67izhts3033-tstr f 6467+4str 64672sk1919vtfrt151
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2sk1917
Abstract: 2SK1917-MR 2SK1917 FUJI 2SK191
Contextual Info: 2SK1917-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-II SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54
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2sk1917-mro-220f15sc-672sk1917+22sk1917 fuji2sk191
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1d500a-0301di200e-0551di200k-0551di200m-120+161di200ma-0501di200z-1001di200z-1201di200zn-1201di200zp-1201di300m-0506di15s-0501mb1400n-1206d130z-120enc4712sk28502sk2761esja58-06a1mbh-60d1mbh60d-090a6di15s050
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2SK056
Contextual Info: MOSFETs F-l Series - Low Rds ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947M R 2SK901 i;-: tJdiruAin RSBr V dss (V ) MA) P d (W ) Qss(pt) Coss(pf) ton (ns) toff (ns) 50 100 250 250 250 45 32 12 12 20 125 125 80 40 125 0.03 0.06 0.30 0.30 0.15 3000
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2SK2079-01M
Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45
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2SK2079
Abstract: 2SK2079-01M
Contextual Info: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)
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2SK1212
Abstract: 2sk904 replacement
Contextual Info: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas
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2SK2652
Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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f8006nf7007n2sj472-01lt0-220+82sj314-01l2sj473-01l2sj474-01l2sj476-01l2sk2760-01r2sk2148-01r2sk26522sk2771-01r
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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2SK725
Abstract: 2sk899 2SK960 90-340 K949 2SK900 2SK903MR k902 k952 2SK1549R
Contextual Info: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK9Ò2 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2SK955 2SK960MR 2SK961 Miaximum Ratifias V dss (V)
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2SK1511
Abstract: 2SK1512-01 2sk1018 2SK1221-01 2SK191 2SK1018-01 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01
Contextual Info: FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts Package Characteristics Max. Maximum Ratinas Device toff (PS) Coss(pfy V d s s (V) Type . Ip (AL _ Pd (W) R ds(on) Q Ciss(pf) 10220 90 210 860 80 0.40 250 W M to :
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2sk1221-01t02202sk191t0220f15+92sk1007-012sk1009-012sk1011-012sk1101-01m2sk15112sk1512-012sk10182sk1018-012sk1013-01
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sk1212
Abstract: 2SK1549R 2SK724 2SK900 2SK901 2SK905 2SK906 2SK947MR 2SK950
Contextual Info: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Miiximum Ralinas Device Type V dss (V) 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1540ft 2ÔK902 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2'3K055 2SK960MR
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