2SK1889 Search Results

Contextual Info: 2SK1889 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)15 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)-55

2SK1889

Contextual Info: 2SK1889 2093 2090 LD L o w D rive S eries V DSs = 30V N Channel Power MOSFET F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. ■Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1889-applied equipm ent.

2SK18

Contextual Info: 2SK1889 2093 2090 LD L o w D rive S eries V DSs = 3 0 V N Channel Power M OSFET F e a tu r e s • Low ON re s ista n c e . •V ery high-sp eed sw itch in g . • L ow -voltage d riv e. ■S u rface m o u n t ty p e device m a k in g th e follow ing possible.

2SK1889

Contextual Info: Ordering num ber:EN4205 SAMYO No.4205 2SK1889 N-Channel MOS Silicon FET i Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible.

4205 mosfet

Abstract: 2SK1889
Contextual Info: Ordering number:EN4205 N-Channel Silicon MOSFET 2SK1889 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1889] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

2SK1925

Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

2SK1885

Abstract: 2SK2437 2SK2438
Contextual Info: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

2SK2164

Abstract: 2SK1885 2SJ270 2SJ260 2sj261
Contextual Info: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2SK1731

Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Contextual Info: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching

TN6Q04

Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Contextual Info: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

SBA10Q-O4Y

Abstract: 2SK2439 2SJ40 SK2555 FW106
Contextual Info: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package

BI 370

Abstract: 2SK1878 LM9005 2501L 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 BA 5810
Contextual Info: - 124 - f £ tt % ffl & m S m * ê JV K V m * (V) * * M 3 & 1 * (A) * P d /P c h Ig s s (max) (W) (A) Vg s (V) (min) (max) Vos (A) (A) (V) fó Í# 1*È (Ta=25‘ C) (min) (V) (max) Vos (V) (V) (min) (S) Id (A) Vd s (V) % ? Id (A) 2SK1852 NEC SW.Motor-D

2S1265

Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
Contextual Info: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and