2SK171 Search Results

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

2SK1712

Abstract: FM20
Contextual Info: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 6.2 mJ ±60 (Tch ID (pulse) PD EAS * 150ºC)

2SK1717

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1717 Field Effect Transistor Industrial Applications Silicon N Channel M OSType L2-rt-MOS IV 4.6 MAX. 1.7 MAX. High Speed, High Current DC-DC Converter, - 0 Relay Drive and Motor Drive Applications Unit in mm 1,6 0.4 ±00 5

2sk1712

Abstract: FM20 8A 820
Contextual Info: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 ±60 (Tch ID (pulse) PD * 150ºC) 6.2 mJ

2SK1719

Abstract: mos relay 719 irl 5a
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1719 Field Effect Transistor Industrial A p p lic a tio n s Unit in m m Silicon N Channel MOS Type l?-;t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive

2SK1719

Contextual Info: TOSHIBA 2SK1719 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-?r-M O S]V 2 S K 1 71 9 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS. DC-DC CONVERTER, RELAY DRIVE A N D M O TO R DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm

6 volt ldr

Abstract: 2SK1717 Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: TOSHIBA SEMICONDUCTOR TECHNICAL DATA TOSHIBA FIELD EFFECT TRANSISTOR 2SK1717 SILICON N CHANNEL MOS TYPE L2—7r - MOS IV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS

2SK1719

Contextual Info: TOSHIBA 2SK1719 Field Effect Transistor Silicon N Channel MOS Type L2-jt-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds(on ) = 0.08S2 (Typ.)

2sk1717

Contextual Info: TO SHIBA 2SK1717 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type L2-7t-MOS IV 1,6MAX 4.6MAX. High Speed, High Current DC-DC Converter, 1 7 MAX. 0.4±0.05 Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive

k2038

Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
Contextual Info: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)

2SK1712

Abstract: FM20
Contextual Info: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Electrical Characteristics Ratings Unit Symbol Unit max Conditions 60 V V BR DSS V I D = 250µA, VGS = 0V ±10 V I GSS ±500 nA VGS = ±10V ID ±15 A I DSS 250 µA VDS = 60V, VGS = 0V

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1719 Field Effect Transistor Silicon N Channel MOS Type l?-rc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ‘ ^D S (O N ) = 0 -0 8 Q (T y p .)

2SK1717

Abstract: 2SK171
Contextual Info: TOSHIBA Discrete Sem iconductors 2SK1717 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel M O S Type l?-7t-MOS IV 1,6 4.6MAX. High Speed, High Current DC-DC Converter, 1.7 M AX. MAX 0.4 ±0-0 5 P 3 - Relay Drive and Motor Drive Applications

SLA5038

Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
Contextual Info: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419

2SK1723

Abstract: 2SK1708 2SK1702 2SK1700 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 2SK1699
Contextual Info: - 118 - « tt « ffl jS mm ft 'Æ f M ? V 1 K v m * * Vg s * I * * V 1* (A) « [x P d / P c h * ♦ ÍW) less (max) (A) Vg s (V) (Ta=25eC ) ft 35 Id s (min) (max) V d s (A) (A) (V) tit (V) ff) (max) V d s (V) (V) S w (inin) (S) Id (A) Id (A) Vd s (V) 2SK1698

Contextual Info: Contents Storage, characteristic inspection, and handling precautions . 2 External dimensions . 3 Avalanche energy capability . 4 Avalanche energy capability measuring method . 5

2SK1177

Abstract: 2SK2420 2SK1180
Contextual Info: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

2SK1717

Contextual Info: 2 SILICON N CHANNEL MOS TY P E L -tt-M O S 2 S K 1 7 1 7 H IG H SPEED, H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . D C -D C C O N VE R TE R , RELAY DRIVE A N D M O T O R D R IVE A PP LIC A TIO N S . 4-Volt Gate Drive Low Drain-Source ON Resistance : Rd S(ON =0.280 (Typ.)

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK3460

Abstract: 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SJ424* VGSS (V) ID (A) ID (pulse) (A) PD (W) ±5 ±20 25 ±20 ±8 ±32 ±20 ±2.5 ±10 500 ±20 ±8.5 2SK1180 500 ±20 2SK1181 500 2SK1183 −60 ±20 2SJ425 −60

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,