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Contextual Info: 2SK1428 2052B AP A d v a n c e d P e rfo rm a n c e Series VDSs = 1 0 0 V N Channel Power M OSFET F eatu res • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage Vdss
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2SK1426
Abstract: 2SK1428 EN3566
Contextual Info: O rd e rin g n u m b e r: E N 3 5 6 6 2SK1428 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON-state resistance. •Very high-speed switching. • Converters. A bsolute M axim um R atin g s at T a = 25°C Drain to Source Voltage
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2SK1428
Abstract: EN3566
Contextual Info: Ordering number:EN3566 N-Channel Silicon MOSFET 2SK1428 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2052C [2SK1428] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3
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EN3566
Contextual Info: Ordering number:EN3566 N-Channel Silicon MOSFET 2SK1428 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2052C [2SK1428] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK1925
Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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2SJ32C
Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK1411
Abstract: 2SK1410 2SK1415 2SK1409 2SK1408 2sk1413 180n 2SK1407 2SK141 2SK1420
Contextual Info: - 102 - f m s ffl £ & m S fr A * * 1 K V * « Se V* (V) frt I* X P d /P c h (A) & * (W) Igss (max) (A) Vg s (V) (Ta=25'C) (min) (max) Vd s (V) (V) (V) 9m (min) Vd s (S) (t$ } (V) Id (A) Id (A) 250 n 500 2 3 10 Im 9 14 10 8 100 ¿i 400 1 5 25 Im 7.2
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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Contextual Info: • AP Series Lineup J-ll Series Existing type V qss = 60V, N-channei Absolute maximum ratings atTa =25°C Type No. Package voss Po* Vqss (V) 2SK1871 Electrical characteristics atTa = 25°C W (W) 15 Vq s (oH) nun to max %6<9R) typftnaxat V e s s H JV W iw*
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K1412
Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Contextual Info: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP
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2SD1028
Abstract: 2SK1597 2SK917 2SC1025 2SK919 2SB823 2SD977 2SC1051P 2SA1019 3SK190
Contextual Info: LIST O F D I S C O N T I N U E D T R A N S I S T O R S The following is an alpha-numerical list of the discontinued products as of October 31,1993. Type Number Replacement Type Number Replacement Type Number 2SA608SPA 2SA608NP 2SA608K-NP 2SA659 2SA930 2SA1017
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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TO-220ML
Abstract: 2SK3702 2SJ655 2SK3706 2SJ651 220ML to220ml 2SK3707 2SJ650 2SJ653
Contextual Info: Ordering number : ENN7623 Power MOSFET for 60V/100V Large-signal Power MOSFET for 60V/100V Motor Drivers The Power MOSFET new series products are large-signal, medium-voltage Power MOSFETs optimized for DC/DC converters and motor drives with a DC input of 12V to 48V. Taking the form of a full-mold TO-220 TO-220ML , the
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