180N Search Results

TSOP 2-44

Abstract: km68
Contextual Info: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g

I 508 V

Abstract: 180N15P IXTK180N15P
Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VDSS VGSM Continuous

Contextual Info: Pulse Jack SMT Power Inductors Power Beads - PA3779.XXXHL Series Electronics Current Rating: Over 86 Apk Inductance Range: 180nH to 350nH Height: 8.0 mm Max Footprint: 11.4mm x 7.0mm Max Halogen Free Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 7

680-W

Abstract: 180N15P IXFN180N15P
Contextual Info: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■

180NQ

Contextual Info: INTERNATIONAL RECTIFIER bSE D WÊÊ 4Ö55452 DOlTMm Slb M I N R PD-2.227A International Rectifier i s o n q . s e r i e s SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Description/Features Characteristics 180NQ. Units lF AV Rectangular

Contextual Info: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)

Delta Electronics dps -300HB A

Abstract: Delta Electronics dps -350MB A Delta Electronics DPS 350MB SFX12V Delta Electronics dps 100 Delta Electronics DPS-300HB
Contextual Info: w w w. d e l t a w w. c o m DPS-180NB Series 80 W x 52 (H) x 210 (L) mm FEATURES Output V1 V2 V3 V4 V5 ELECTRICAL SPECIFICATIONS ENVIRONMENTAL FlexATX Complies with SFX12V V2.1 Remote On/Off High Reliability Low Acoustic Noise Built-in EMI Filter Meets IEC 60950: 1999/UL 60950 3rd Edition

Contextual Info: CMOS DRAM KM44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC

180N055T

Contextual Info: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

2SK1267

Abstract: SC-65
Contextual Info: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.

Contextual Info: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS

180N10

Contextual Info: Advanced Technical Information IXFX 180N10 IXFK 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient

HCF4585B

Abstract: HCC4585B HCC4585BF HCF4585BC1 HCF4585BEY HCF4585BM1
Contextual Info: HCC/HCF4585B 4-BIT MAGNITUDE COMPARATOR . . . . . EXPANSION TO 8, 12, 16 . 4 N BITS BY CASCADING UNITS MEDIUM-SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns typ. AT 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V, AND 15V PARAMETRIC RATINGS

Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS

Contextual Info: Spec Sheet INDUCTORS Multilayer Chip Inductors for High Frequency Applications HK series HK1608R18J-T Features Item Summary 180nH(±5%), 300mA, 8, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table

180n15p

Abstract: 180N15 PLUS247 IXFX180N15P
Contextual Info: PolarTM HiPerFET Power MOSFET IXFK 180N15P IXFX 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

IXTK180N15P

Contextual Info: PolarHTTM Power MOSFET IXTK 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 10 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VDSS VGSM

Contextual Info: VS-180NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 180 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability

HCF4585B

Contextual Info: HCF4585B 4-BIT MAGNITUDE COMPARATOR • ■ ■ ■ ■ ■ ■ ■ EXPANSION TO 8, 12, 16.4 N BITS BY CASCADING UNIT MEDIUM SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns Typ. at 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO

180N10

Abstract: 125OC
Contextual Info: IXFK 180N10 IXFX 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V

180N06

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS

ixfn 180n20

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 180N20 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data S Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200