2SK1266 Search Results

Contextual Info: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)

Contextual Info: 2SK1266 Switching Diodes MA199 Silicon epitaxial planer type Unit : mm For high voltage resistance switching circuit +0.2 2.8 –0.3 +0.25 1.5 –0.05 package and automatic mounting +0.2 1.9±0.2 1.45 ● Small 1 3 +0.1 reverse recovery period trr 0.4 –0.05

2SK1266

Contextual Info: 2SK1266 Switching Diodes MA160A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features Short reverse recovery period trr ● Small capacity between pins, Ct

2SK126

Abstract: 2SK1266
Contextual Info: Pow er F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Features • • • • ■ Package Dimensions Low ON resistance RDs on : R DS (on) 1 = 0 .080 (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving ( V g s = 4V)

2SK1266

Contextual Info: 2SK1266 Power F-MOS FETs 2SK1266 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : R DS(on)1= 0.08Ω(typ) 2.7±0.2 switching : tf=180ns(typ) secondary breakdown ● Low-voltage 16.7±0.3 ● No 5.5±0.2 drive 4.2±0.2 ● High-speed 4.2±0.2

2SK1266

Contextual Info: P o w e r F -M O S F E T 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance Ri„ on : K|,.» (on) 1 = 0 . 0 8 0 (typ.) Unit mm • High switching rate : t , - 180ns (typ.) • No secondary breakdown • For low voltage driving ( V « = 4V)

G225

Abstract: marking M2B 2SK1266
Contextual Info: 2SK1266 Switching Diodes MA123 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Small capacity between pins, Ct 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Rating Symbol

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2SK996

Contextual Info: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative

OF03

Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1248

Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
Contextual Info: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2sk2015

Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
Contextual Info: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>

2SK2277

Abstract: 2SK2580 220E4 2SK2015 2SK2014
Contextual Info: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)