2SK1256
Abstract: TC-2510
Contextual Info: Power F-MOS FET 2SK1256 2SK1256 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R DS on : R (on) 1 = 0 .07 ft (typ.) ds Unit: mm • High sw itching ra te : t f= 9 5 n s (typ.) • No secondary breakdow n • Low voltage drive is possible
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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2SK996
Contextual Info: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46
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2sk1868o-220f2sk12552sk1256+72sk19672sk10332sk1257o-220e2sk25782sk25792sk996
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OF03
Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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a2sk22772sk20142sk20472sk1834+9220fro2sk1980a2sk2128a2sk21252sk18332sk2509of032sk12632sk2377
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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2SK1248
Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
Contextual Info: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241
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2sk1241zsk12422sk1243-10/i+122sk12442sk12452sk12230130ns190nstyp2sk12622sk12482sk12572sk1242sk12502sk12492sk1259
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2SK1256
Contextual Info: P o w e r F -M O S F E T 2SK12 5 6 2S K 1256 Silicon N-channel Power F-MOS FET • P a c k a g e D im e n s io n s ■ F e a tu re s • Low ON resistan ce RDS on : RDS (on) l = 0 .0 7 il (typ.) • High sw itching ra te : t f= 9 5 n s (typ.) • No secondary breakdow n
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2sk1256g01714b |
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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mn1001mn1020215mn1020407mn1020415+16mn1020715mn102lf53gmn1040mn110mn1101mn115on31052sd2603mn41174052sc901bmn6520mn1280mn1225mn6147c2sc5573gn2013
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Contextual Info: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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mn1380mn13801mn13802mn1381+16mn13811mn13812mn1382mn13821mn13822mn1544mn1280an6512mn15814mn152452sb1163amn158413an7210an7226mn15287mn15283
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2sk2015
Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
Contextual Info: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^
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2sj03982sk20142sk20152sk2016+12a2sk2211a2sk2276a2sk2277a2sk23422sk1262o-220f2sk22772sk23772sk16352sk12572sk12592sk2276
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2sk6622sk11032sj1632sk198+162sk3742sk1232sk12162sk18422sj1642sk301k614k 18332sk 129 agn10152sk1257 equivalent2sk19622sk 170 pingn1021ic stk411-220e circuitk996
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