2SJ232 Search Results

Contextual Info: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

2SJ232

Contextual Info: Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm

2SJ232

Abstract: ITR00150 ITR00151 ITR00152 ITR00153 ITR00154 ITR00155
Contextual Info: 注文コード No.N 3 8 1 7 2SJ232 三洋半導体データシート 2SJ232 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ232

Abstract: EN3817
Contextual Info: Ordering num ber:E N 3 8 1 7 _ 2SJ232 No.3817 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.

2SJ232

Contextual Info: Ordering number : EN3817 SANYO Semiconductors DATA SHEET 2SJ232 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.

ALC271X

Abstract: alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 LA-6901P RTM890N-631-VB-GRT
Contextual Info: A B C D E Compal Confidential 1 Model Name : P5WE0 File Name : LA-6901P BOM P/N:43 1 Compal Confidential 2 2 P5WE0 M/B Schematics Document Intel Sandy Bridge Processor with DDRIII + Cougar Point PCH Nvidia N12P GS/GV 2010-08-11 3 3 REV:0.1 4 4 Issued Date

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SJ270

Abstract: 2SJ26
Contextual Info: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0

Contextual Info: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch

2SJ468

Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Contextual Info: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8

2SJ239

Abstract: 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ230 2SJ231 2SJ232 2SJ234
Contextual Info: - 26 - f 33 € tt m € & £ ft . m ffi K E 2SJ230 Hi¥ HS SV MOS P 2SJ231 =& HS SW MOS P E V* V m * (V) * * 48 % 3 I* X P d /P c h (A) * * (W) I gss (max) (A) Vg s (V) w Ip s (min) (max) Vd s (A) (A) (V) (Ta'25°C) tt (min) (max) Vd s (V) (V) (V) -60 DSS

2sc5203

Abstract: 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005
Contextual Info: Ordering number : E I 0 0 2 3 Announcement Regarding Discontinuation and Limited Availability to Existing Customers of Hyper Device Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis.