2SD789 E Search Results

Hitachi DSA0076

Abstract: 2SB740 2SD789
Contextual Info: 2SD789 Silicon NPN Epitaxial ADE-208-1140A Z 2nd. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings (Ta = 25°C) Item

2sd789

Abstract: Hitachi DSA002756
Contextual Info: 2SD789 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline 2SD789 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO

2sd789

Contextual Info: 2SD789 Silicon NPN Epitaxial HITACHI Application • Low frequency power amplifier • Complementary pair with 2SB 740 Outline TO-92M OD | 1 1 3 J 2 2. Collector 3. Base 1 893 2SD789 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

2SB740

Abstract: 2SD789 Hitachi DSA00388
Contextual Info: 2SD789 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

2SD789

Abstract: 2SD789 transistor 2SD789 C 2SD789 E
Contextual Info: 2SD789 2SD789 TRANSISTOR NPN TO-92MOD FEATURE Power dissipation PCM: 1. EMITTER 0.9 2. COLLECTOR W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage 100 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃

2SB740

Abstract: Hitachi DSA002754
Contextual Info: 2SB740 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline 2SB740 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

2SD789ETZ-E

Abstract: 2SD789 2SD789DTZ-E 2SD789D 2SD789E 2SB740 2SD789CTZ-E PRSS0003DC-A
Contextual Info: 2SD789 Silicon NPN Epitaxial REJ03G0772-0300 Previous ADE-208-1140A Rev.3.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector

2SB740

Abstract: Hitachi DSA0076 2SD789
Contextual Info: 2SB740 Silicon PNP Epitaxial ADE-208-1032 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB740 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB740 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD789 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD789 TRANSISTOR（ NPN ） ＴＯ－９２ＭＯＤ FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage

2SB740C

Abstract: 2SB740 2SB740BTZ-E 2SB740CTZ-E 2SD789 PRSS0003DC-A
Contextual Info: 2SB740 Silicon PNP Epitaxial REJ03G0651-0200 Previous ADE-208-1032 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD789 TRANSISTOR NPN TO-92MOD FEATURE Power dissipation PCM: 1. EMITTER 0.9 2. COLLECTOR W (Tamb=25℃) Collector current 1 A ICM: Collector-base voltage 100 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SD789 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Frequency Power Amplifier 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD789 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB740 2. COLLECTOR

CRVT

Abstract: 2sb740
Contextual Info: 2SB740 Silicon PNP Epitaxial HITACHI Application • L o w frequency power a m p lifie r • C om plem entary pair w ith 2SD789 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 215 2SB740 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: HITACHI 2SB740 SILICON PNP EPITAXIAL LOW FREQ UEN C Y P O W ER AM PLIFIER Complementary pair with 2SD789 :x x rz p o L Fmatçr 2 Coíiccíof y Base Ü.>MiKnsi n* m» mm* JEDEC TO-92 MOD. I ABSOLUTE MAXIMUM RATINGS cra=25<’c> 3Ss mho! Item MAXIMUM COLLECTOR DISSIPATION

2SD789

Contextual Info: HITACHI 2SD789 SIU C O N MPN £PITAX*Ai. LOW FR EQ UENC Y POW ER AM PLIP’ ER Com pîem eniary pair * ìli 2SÖ740 I •3 ¡M ft K-ri- :*• Ti C . ' 7 Sx * i;~<t {[V.r.’.* • irr « í'iji r J Ë D E C TO-92 MOD. I A B S O L U T E MAXIMUM R A TIN G S O a~ jyT<

2SB740

Abstract: 2SD789
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2sd789d

Abstract: 2SD789 2SD789ETZ-E 2SD789E 2SB740 2SD789CTZ-E 2SD789DTZ-E PRSS0003DC-A 2sb74
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

sc 3228

Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
Contextual Info: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X

2SB737

Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4

Nec K 872

Abstract: 2SD887 2sc1162 2SD883 2sc2335 2SD877 2SD756 2sd756 e 2sc3114 2SC3247
Contextual Info: - s € tt « Manuf. T y p e No. H Ä SANYO S T O SHIBA S m NEC ÍI HITACHI S ± iS FUJITSU fâ T MATSUS H I T A 2 S D 860 ✓' ta T 2SC25S2 2SD 860A te T 2SC2552 2SD 860B fâ T 2SC2552 2SD 861 «- te T 2SC2552 2SC3169 2SD 861A te T 2SC2552 2SC3169 2SD 861B

2SD349

Abstract: 2SB1059 2SD1490 2SD789
Contextual Info: HITACHI 2SD1490-SILICON NPN EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER Complementary pair with 2SB*059 -n « t. Eniner !' Cdl'ninf .1. Bi« <l>itnc HMD it» in n-r¡i> JEDECTO-92 MAXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207