2SD789 E Search Results

Hitachi DSA0076

Abstract: 2SB740 2SD789
Contextual Info: 2SD789 Silicon NPN Epitaxial ADE-208-1140A Z 2nd. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings (Ta = 25°C) Item

2sd789

Abstract: Hitachi DSA002756
Contextual Info: 2SD789 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline 2SD789 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO

2SB740

Abstract: Hitachi DSA002754
Contextual Info: 2SB740 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline 2SB740 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

2SB740

Abstract: Hitachi DSA0076 2SD789
Contextual Info: 2SB740 Silicon PNP Epitaxial ADE-208-1032 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB740 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB740 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD789 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD789 TRANSISTOR（ NPN ） ＴＯ－９２ＭＯＤ FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD789 TRANSISTOR NPN TO-92MOD FEATURE Power dissipation PCM: 1. EMITTER 0.9 2. COLLECTOR W (Tamb=25℃) Collector current 1 A ICM: Collector-base voltage 100 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SD789 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Frequency Power Amplifier 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD789 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB740 2. COLLECTOR

2SB740

Abstract: 2SD789
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

sc 3228

Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
Contextual Info: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X

2SB737

Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4

Nec K 872

Abstract: 2SD887 2sc1162 2SD883 2sc2335 2SD877 2SD756 2sd756 e 2sc3114 2SC3247
Contextual Info: - s € tt « Manuf. T y p e No. H Ä SANYO S T O SHIBA S m NEC ÍI HITACHI S ± iS FUJITSU fâ T MATSUS H I T A 2 S D 860 ✓' ta T 2SC25S2 2SD 860A te T 2SC2552 2SD 860B fâ T 2SC2552 2SD 861 «- te T 2SC2552 2SC3169 2SD 861A te T 2SC2552 2SC3169 2SD 861B

2SD349

Abstract: 2SB1059 2SD1490 2SD789
Contextual Info: HITACHI 2SD1490-SILICON NPN EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER Complementary pair with 2SB*059 -n « t. Eniner !' Cdl'ninf .1. Bi« <l>itnc HMD it» in n-r¡i> JEDECTO-92 MAXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SC3170

Abstract: 2sc3904 NEC 2SC3358 2sc3358 2SC3357 2SC3505 2SC496 2SC3757 2SC4158 2SC3356
Contextual Info: - m s T ype No. a € Manuf. 0 a 0 a 0 a a a 0 a 2SC 3571 J 2 SC 3572 2SC 3573 2 SC 3574 2 SC 3575 2SC 3576 . = & 2 SC 3577 E T 2 SC 3 578 il B = SANYO TOSHIBA ffi NEC ÌZ HITACHI i i FUJITSU «J T MATSUSHiTA 2SC3039 ¡!M,3i II] 2SC4162 2SC3170 2SC4161 2SC3353

2sc2238

Abstract: 2SD759 2sc1741 2SD401A 2SC1628 2SC1959 2SC2021 2SC1627 2SD1562B 2sc2275
Contextual Info: m Si € Type No. tt « = Manuf. * m NEC B i HITACHI ¡S ± ài FUJITSU ta t MATSUSHITA m h MITSUBISHI □ — A ROHM B ÌL 2SC2911 2SC1628 2SD1609 2SD 758 - l=F TOSHIBA CD SANYO 2SD 757 ^ 2SC2912 2SC1628 2SD1610 2SD 7 5 9 - B Si 2SC2344 2SC2238 2SD4Q1A 2SC1683

2SB1002

Abstract: 2SD1368 2SD789
Contextual Info: HITACHI 2SD1368 SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SB5Û02 I. Bax !. C i i l t n w 3 . fc in u l!« 4 CdJM H r J 0.14'T 4t3jra£& A K iu in r.'Li'j UPAK U ABSOLUTE MAXIMUM RATINGS (Xa=25»C) [(¿Ill •Symbol MAXIMUM COLLECTOR DISSIPATION

Hitachi DSA002756

Contextual Info: 2SD1490 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1059 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 50

Hitachi DSA002756

Contextual Info: 2SD1368 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline 2SD1368 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

2SC3258

Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T

2SB1002

Abstract: 2SD1368 2SD789 Mark CA DSA003638
Contextual Info: 2SD1368 Silicon NPN Epitaxial ADE-208-1148 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C)

2SB1002

Abstract: 2SD1368 2SD789 DSA003720
Contextual Info: 2SD1368 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SD1368 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB737

Abstract: 2SB694H 2SB709 2SB718 2SB747 2sb707 2SD601 2SD756 2SD756A 2SB698
Contextual Info: - 58 - n Ta=25*C,*EP(iTc=25t5 2SB694H B Ä L F PA/PStf VcBO VcEO (V) (V) Ice D C) (A) Pe Pe* (W) m ^ fó 4# te (Ta=25°C) (max) ( u Pí) VcB (V) (min) (max) Vc e (V) Ic /I e (A) -0.05 LF PA/LS PSW -0.5 -1.5 LF PA/LS PSW -0.5 -1.5 -0.5 2SB703A LF PA/LS PSW

2SD737

Abstract: 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj ºñ°í 2SD701 2SD702 400 5 40A 2SD703 200 5 30A 2SD704 50 7 5A 2SD705