2SC267 Search Results

Contextual Info: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 Unit: mm High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Transistors 2SC2671F Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low noise figure NF • High maximum unilateral power gain GUM • High transition frequency fT

2SC2670

Abstract: 2SC2670-0 2SC2670-R 2SC2670-Y
Contextual Info: TOSHIBA 2SC2670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2670 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM FREQUENCY CONVERTER APPLICATIONS. Low Noise Figure : NF = 3.5dB (Max.) (f=lMHz)

2SC2671

Contextual Info: Transistor 2SC2671 F Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0±0.2 ● Low noise figure NF. High gain. High transition frequency fT. • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

2SC2673

Abstract: 2sa881 HM431
Contextual Info: ROHM CO LTD 40E D 7ÖSäcn ci QGÜS7ST 7 BRHil //Transistors 2SC2673/2SC4040 T - 2 7 - iÇ - — 2 S C 2 3 7 3 2 S v 4 v 4 0 v '^ > h 7 > y 7 ^ 4 ,tt^JiH lIiffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistors 1ftffivfi& Ej/Pim ensions Unit : mm

2SC2670

Abstract: 2SC2670-0 2SC2670-R 2SC2670-Y
Contextual Info: TOSHIBA 2SC2670 2SC2670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM FREQUENCY CONVERTER APPLICATIONS. Unit in mm 4.2 M AX. Low Noise Figure : NF = 3.5dB (Max.) (f=lMHz)

2SC2673

Abstract: 2SC4040 2SA881
Contextual Info: 2SC2673/2SC4040 /T r a n s is to r s ik ^ ^ y 7 ^ U - t iN P N y ijn > h 7 > y 7 ^ Epitaxial Planar NPN Silicon Transistors /Medium Power Amp. 2SC 2673 2SC 4040 • • ^ J B \H ± 0 /D im e n s io n s U n it: mm « f t 1) P C * ' " * ^ ' o Pc=600m W 2 ) V c E ( s a t ) # i 'i6 :'''o

2SC2671

Abstract: 2SC2778
Contextual Info: PANASONIC INDL/ELEK-CSEMI} ?EC D | b ti32ÛS4 □□□TE43 3 h ’2SC2671 H 2SC2671 (H) '> ij 3 y NPN x kf£ / S i NPN Epitaxial Planar UHFfcfiJifciatBffi/UHF Low-noise Amplifier • féiì/Features • ÌlefÌìiiSc N F tH B ^ ' o/ L

Contextual Info: T O SH IB A 2SC2670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2670 HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM FREQUENCY CONVERTER APPLICATIONS. U nit in mm 4.8 MAX. Low Noise Figure : NF = 3.5dB (Max.) (f= lM H z)

SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Contextual Info: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670

2SC2670

Abstract: 2SC2670-0 2SC2670-R 2SC2670-Y brel
Contextual Info: TO SH IBA 2SC2670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2670 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . AM FREQUENCY CONVERTER APPLICATIONS • Low Noise Figure : NF = 3.5dB (Max.) (f = 1 MHz)

2SC267

Abstract: 2SC2671F
Contextual Info: Transistors 2SC2671F Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage Emitter open Collector-emitter voltage (Resistor between B and E) * Emitter-base voltage (Collector open)

2SC2671

Abstract: SC-43A
Contextual Info: Transistor 2SC2671 F Silicon NPN epitaxial planar type Unit: mm For UHF band low-noise amplification 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise figure NF • High gain • High transition frequency fT 0.7±0.2 • Features 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2sc2675

Contextual Info: 2SC2675 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2671F

Contextual Info: Transistors 2SC2671F Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 • Low noise figure NF • High maximum unilateral power gain GUM • High transition frequency fT 12.9±0.5

Contextual Info: TOSHIBA 2SC2670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 7 < ; r HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM FREQUENCY CONVERTER APPLICATIONS. • Unit in mm 4.2 M A X. Low Noise Figure : NF = 3.5dB (Max.) (f= 1MHz)

2SC2673

Abstract: 2SC4040 2sa881
Contextual Info: / I ransistors Is "7 2SC 2673 2S C 4040 2SC2673/2SC4040 Power Amp. Epitaxial Planar NPN Silicon Transistors • W Fi \fi± |H /D im en sio n s Unit : mm 1) Pc =600m W 2) VCE(sat)=150m V Typ (at Ic / I b = 500mA/50mA) ¿r iS l'o 3) 2SA881 /2SA15601 =l > Z f') „

2SC2670

Abstract: 2SC2670-O 2SC2670-R 2SC2670-Y
Contextual Info: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Unit: mm Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC2671 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)14 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC

nec 2501

Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Contextual Info: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA