2SD381
Abstract: 2SB537 transistor 2sd381 2SD382 2SB536 2SB536 M SB536 251C
Contextual Info: 2SD381, 382/2SB536, 537 2SD381, 382/2SB536, 537 / NPN/PNP NPN/PNP SILICON EPITA XIA L TRANSISTOR Audio Frequency Power Am plifier, Low Speed Switching £ » /F E A T U R E S 60—100W M'<9-ryy<o Suitable for driver of 60 to 100 watts audio amplifier. •» £ E T '* 5 o
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2sd381382/2sb5362sb5372sd382+52sb536transistor 2sd3812sb536 msb536251c
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nec 2sd381
Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A
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2sc5222n1482bdc01d2sd381+92sd3822sb1086nec 2sd381tip65mj43612sd608a2sd1459rsd1478idc2073
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to3a
Abstract: 2SB536 T03B 2SB511 2SD331 2SD325 2SD3258 2SD314 2SB546A 2SD341
Contextual Info: - 218 - Ta=25T;, *EP(äTc=25*C M £ J± & m & (V) . Vc e o lc(DC) Pc (V) (A) (W) 1 Pc* icBO (W) imax) < jb A> V'CB (V) ft > (min) E fö 4# (max; 14 V’ cE (V) (Ta=25*C) [*EP(ätypfla VcE(sat vmaxj (V) Ic /I e (A) (V) Ic (A) 1b (A) 2SD124AH B \L PSW 75 50
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2sd124ah2sd125ah2sd126h2sd234g+162sd235g2sd2882sd2892sd313sb547at0-220aato3a2sb536t03b2sb5112sd3312sd3252sd32582sd3142sb546a2sd341
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2SB504
Abstract: 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331
Contextual Info: - 54 - Ta=25cC, *EP(äTc=25‘ C m % f fl £ & m VcBO VcEO lc ( D O Pc Pc* (V) (V) (A) (W) (W) ICBO (max) ( j ü A) % tä 4# te 0 ^ 2 5 *0 ) [*E P (ä typ 3 hF E VcB (V) (min) (max) Vc e (V) ¡ c/ I e (A) (max) (V) (V) Ic (A) Ib (A) 2SB434G LF PA/SW -60
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ta-25-c2sb434g2sb435g2sb502a+152sb503a2sb5042sb504a-60sd5522sb5522sd5532sb5072sb506a2sb5082sb5112sd3252sb5602sb5062sb5362sd331
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transistor 3569
Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —
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bandwi32tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488transistor 3569t4 3570 dpakbu 508 transistorbu108bdw93cst t4 3580transistor t4 3570bu326bu100mj*15033
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2SC1419
Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.
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mje350tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1419tip54mj1000mj15024 mj150252sc1943se9302mje24822sd675bu326bu108
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Motorola case 77
Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc
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mje200mje210tip73btip74+13tip74atip74btip75tip75atip75btip75cmotorola case 772n3055bu1082sc15bdw93c applicationsbu326bu100
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2SC124
Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS
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2n51912n51922n51942n5195+15tip73btip74tip74atip74btip75tip75a2sc1242n5195 motorolabu108bd238 equivalent2sa1046tip3055 equivalentbu806 complementbu326bu100
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electronic ballast with MJE13003
Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light
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bud43btip73btip74tip74a+15tip74btip75tip75atip75btip75celectronic ballast with mje13003bu108application notes mje13005npn power darlington transistors high voltage high icm to-247mje13003 ballastmje24822sd6752sc1419bu326bu100
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c 3421 transistor
Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability
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bu208atip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488c 3421 transistorbu108transistor equivalent of bu406equivalent transistor 2n3055bu126 motorola2sd165bc 574 transistord 1163 a2n4906 motorola
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MJ15003 300 watts amplifier
Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications
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mje340mje350mjd340mjd350+16tip73btip74tip74atip74btip75tip75amj15003 300 watts amplifierst t4 3580mjd340 stmje342sd478d45h8 equivalentbux98ase9302mje24822sc1419
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TIP35C transistor replacement
Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V
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tip73btip74tip74atip74b+15tip75tip75atip75btip75c2n64882n6490tip35c transistor replacementtip35c replacement2n3055 equivalentbu108d45h11 equivalent replacementbdx542n3772 equivalentbu326bu100
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BU108
Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light
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bul43btip73btip74tip74a+12tip74btip75tip75atip75btip75cbu108d45celectronic ballast with mje13003npn power darlington transistors high voltage high icm to-247bdx54bu326bu100
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2SA1046
Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS
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2n63872n6388220abtip73b+8tip74tip74a2sa1046bu108transistor bc 239 cbu326bu100mje15033 replacement
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BD139
Abstract: BU108 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
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tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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mj11018mj11022mj11017mj11021+9tip73btip74tip74atip74bmj11017 equivalentbu108bu326bu100mje3055t
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Motorola transistor 388 TO-204AA
Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —
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2n60302n60312n56302n6035+142n60382n60362n6039225aamotorola transistor 388 to-204aa714 icbc 4582sc124bu108bu3262sa10462sc7bdx542sd214
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2N6124
Abstract: 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2n49212n49222n49232n4918+152n4920tip73btip74tip74atip74btip752n6124334 bdw93c2n4920rbu1082sa1046tip127 tip122 audio amplifier circuit2sa981 equivalentbu806 complementbdx54
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bdx54c equivalent
Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc
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bdx53bbdx53c220abbdx54b+14bdx54ctip73btip74tip74abdx54c equivalentbox 53c darlington power transistortip122 d-pak packageall similar transistor 2sa715bdx53c motorolabu108transistor tip31amplifier 2sd718 2sb688 schematicbdx542n386
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MJH11021 equivalent
Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
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mjh10012mj10012mjh11018mjh11020+14mjh11022mjh11017mjh11019mjh11021mjh11021 equivalentbuv44ft317sdt92022sc1903bd262 darlingtonbd133mje15033 replacementir6412sc2159
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TIP42C as regulator
Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems
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mje1123tip73btip74tip74a+15tip74btip75tip75atip75btip75ctip42c as regulatorbu1082sc103npn power darlington transistors high voltage high icm to-247nsp21002sd68bdx542sc1943mje24822sd675
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