2SD190 Search Results

2SB1268

Abstract: 2SB126 2sD190 3309ta EN226
Contextual Info: Ordering number:EN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

2267.1

Abstract: EN2267 EN2267B en-2267 2SB1271 EN226
Contextual Info: Ordering number:EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

Contextual Info: Ordering num ber: EN3971 2SD1908 No.3971 NPN Epitaxial Planar Silicon Transistor CRT Display Horizontal Deflection Output Applications Features • Fast switching speed. • Especially suited for use in high-definition CRT display : Vcc = 6 to 12V. •Wide ASO and highly resistant to breakdown.

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

2SD1904

Abstract: 2SB1268 2sb126 ITR09474
Contextual Info: Ordering number:ENN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

Contextual Info: 2SD1905 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SD1909 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)500 I(C) Max. (A)6 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.200

2SD1909

Abstract: OX15V
Contextual Info: Power Transistors 2SD1909 2SD1909 ^ 3 2 0 3 2 ODlblDT b33 Silicon NPN Triple Diffused Planar Darlington Type Package Dimensions High Power Amplifier • Features • • • • Very good linearity of DC current gain I i f e High collector-em itter voltage ( V c e o )

2SB1266

Contextual Info: Ordering number:EN2538A PNP/NPN Triple Diffused Planar Type Silicon Transistors 2SB1266/2SD1902 AF Power Amplifier Applications Features Package Dimensions • Suitable for sets whose heighit is restricted. · Wide ASO adoption of MBIT process . · High reliability.

2267.1

Abstract: 2SB1271 2SD1907 ITR09517 ITR09518 ITR09519
Contextual Info: Ordering number:ENN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

2SB1269

Abstract: 2SD1905 2sb126 ITR09490 High-Current Switching Applications
Contextual Info: Ordering number:ENN2265A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1269/2SD1905 High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

30V-8A

Abstract: D1903 2263A 2SB1267 2SD1903
Contextual Info: O rd e rin g n u m b e r:E N 2263A SANYO 2SB1267/2SD1903 N0.2263A i PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Current Switching Applications Applications . Suitable for relay drivers, high-speed inverters, converters and other general high-current switching

Contextual Info: 2SD1907 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

TO-220MF

Abstract: 2SB1270 2SD1906 ITR09502 ITR09503 ITR09504 2SB127 2SD190
Contextual Info: Ordering number:ENN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

B1266

Abstract: ICL 2025 d1902 a 1201 sanyo 2SB1266 2SD1902 TO-220AA TRANSISTOR D 1902 transistor Amp 2054 EIAJ CP 301
Contextual Info: SANYO SEMICONDUCTOR 15E D I CORP 2SD1902 7 cH 7 ü 7 b Q00S3Q1 [ r-is-o? N P N / pnp Triple Diffused Planar Silicon Transistors 2049 2SB1266 2538 Low Frequency Power Amp Applications Features . Suitable for sets whose height is restricted . Hide ASO adoption of MBIT process

2SB1270

Abstract: 2SD1906 ITR09502 ITR09503 ITR09504
Contextual Info: Ordering number:ENN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

2SD1901

Abstract: 2264B 2SB1268
Contextual Info: Ordering num ber: EN 2264B 2SB1268/2SD1904 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications / . S u i t a b l e for r e l a y drivers, h i g h - s p e e d inverters, c o n v e r t e r s , and o t h e r general high-current switching applications

Contextual Info: 2SD1904 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: Ordering number:EN3971 NPN Epitaxial Planar Silicon Transistor 2SD1908 CRT Display Horizontal Deflection Output Applications Features Package Dimensions unit:mm 2049C [2SD1908] 10.2 4.5 1.3 20.9 1.6 11.5 8.8 0.9 • Fast switching speed. · Especially suited for use in high-definition CRT

2SB1269

Contextual Info: Ordering number:EN2265A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1269/2SD1905 High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

LO1B

Abstract: 2SD1909
Contextual Info: Power Transistors 2SD1909 ^32052 QDlbTDI b33 2S D 1909 Silicon NPN Triple Diffused Planar Darlington Type P a c k a g e D im e n s io n s Unit I mm 4<4max. H ig h P o w e r A m p lifie r 2.9max.H • F e a tu re s • V e ry g o o d lin e a rity o f DC c u r re n t gain

LSE B10

Abstract: 2267.1 2SB127 22671 2SB12 2SB1271 2SD190
Contextual Info: 2267B Ordering num ber: EN SA W O i I 2SB1271/2SD1907 N0.2267B PNP/NPN Epitaxial Planar Type Silicon Transistors r H i g h -C u r r e n t Sw i t c h i n g A p p l i c a t i o n s Applications . Suitable for relay drivers, high-speed inverters, converters, and other

2SB1267

Abstract: EN2263A
Contextual Info: Ordering number:EN2263A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1267/2SD1903 30V/8A High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters and other general high-current switching.

Contextual Info: 2SD1908 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)330 I(C) Max. (A)7 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)5