2SD114 Search Results

2SB863

Abstract: 2SD1148
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL

2SD1148

Abstract: 2SB863 equivalent 2sb863 hfe1
Contextual Info: Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SB863

Abstract: 2sd1148
Contextual Info: SavantIC Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD1148 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

Contextual Info: 2SD1140 TO SHIBA TO SHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (D ARLING TO N) MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. Unit in mm SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hjTE = 4000 (Min.)

Contextual Info: 2SD1141 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating C ollector to base voltage ^C B O 400 Collector to em itter voltage Emitter to base voltage

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

2SB863

Abstract: 2sb863 transistor 2SD1148 SC-65
Contextual Info: 2SD1148 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage

D1140

Abstract: transistor D1140 2SD1140
Contextual Info: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

Contextual Info: HITACHI 2SD1141 K— Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current

2SD1140

Contextual Info: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER -2SD1140 INDUSTRIAL APPLICATIONS M I C R O M O TO R DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 M A X . POWER AM PL I F I E R APPLICATIONS. FEATURES : . High DC Current Gain : hFE=l!,000( M i n •)

2sd1148

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm .1S9MAX. . 0 3 ,2 ±0.2 FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25uC &45±Q2 RATING

2SD1148

Abstract: 2SB863 audio amplifier 70w
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm 15.9MAX. . 0 3.2±qg FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC RATING

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.4±0.2 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 • High forward current transfer ratio hFE

2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .

2SD1149

Contextual Info: Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 0.40+0.10 ñ0.05 1.9±0.1 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

Contextual Info: 2SD1141 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B 2 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (T a = 6 kQ (Typ) 450 Q (Typ) ¿ 3 25°C) Item Symbol Rating Unit Collector to base voltage

gy-80

Abstract: 2SD1154 bf 871 2SD1149 2SD1151 marking hkk ELF AMPLIFIER 35654
Contextual Info: PANASONIC INDL/ELEK-CSEHI} 7BC D | □□□C]5D4 S f ï f ^ T 2SD1149 2SD1149 '> ij 3 > N P N N P N Epitaxial Planar T JU’/ U — i f i J i & i i i U f f l / A F Am plifier • 4$ Î S /F e a tu re s

2SD1113

Abstract: 2SD1141
Contextual Info: 2SD1141 K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 400 V ————————————————————–

2SD1145

Contextual Info: Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor 2SD1145 High-Current Driver Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, strobe DC-DC converters, motor drivers. unit:mm 2006B [2SD1145] 6.0 5.0

2sb863 transistor

Abstract: 2sb863 2sd1148
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB863 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1148 APPLICATIONS ·Power amplifier applications

Contextual Info: T oshiba oiscrete St. /o p to T 2SD1148 9097250 TOSHIBA DISCRETE/OPTO DE I ^ O T Y E S D i>6C 07873 0007073 DT-3B-J3 SILICO N NPN T R IP L E D IFFU S ED TYP E POWER AMPLIFIER APPLICATIONS. Unit in mm 1&9MAX. 0 3 .Z ± O iS FEATURES: r> . Complementary to 2SB863.

2SD424 TOSHIBA

Abstract: 2sd472 2SC1818 MG50G2CL3 2SD873 2sd4242 2SD424 2SD335 2SD650 2SD718
Contextual Info: - 216 - s « T y p e No. a « Manuf. m h S AN YO JE *ï TOSHIBA 2SD 492 ^ h □ — ^ 2SD 493 ^ ï h a - 7 2 SD 718 2SD 494 ^ í h □ 2SD718 2SD 490 ^ h 2SD 499 ^ i h □ — "5 2SD1148 J Í h□ — ^ T ± 2S D 1 1 4 8 X 2 s $ S: s: M 2£ 0 ÏZ y -—

2SB863

Abstract: 2SB863 equivalent 2sd1148
Contextual Info: Inchange Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SD1148 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage

2SD1145

Abstract: 784E
Contextual Info: Ordering number: EN 784E 2SD1145 N0.784E i NPN Epitaxial Planar Silicon Transistor High-Current Driver Applications Applications . Relay drivers, hammer drivers, lamp drivers, strobe DC-DC convertrers, motor drivers. Features • Low saturation voltage • Large current capacity and wide ASO