2SC5368 Search Results

Contextual Info: T O S H IB A 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS <¿3.1 ±0. 5.8 DC-DC CONVERTER APPLICATIONS High Speed : tr =0.5,«s Max.), tf=0.3/*s (Max.)

c5368

Abstract: transistor npn C536 2SC5368
Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

2SC5368

Contextual Info: TOSHIBA 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS ¿3.1 ±0.1 5.8 DC-DC CONVERTER APPLICATIONS ÏHigh Speed : tr = 0.5/^s (Max. , tf=0.3/*s (Max.) (IC = 0.8A)

2SC5368

Abstract: 2SC536
Contextual Info: TO SH IBA 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS High Speed tr = 0.5/^s Max. , /T (Max.) A O A \ U (j —u . o a ; High Collector Breakdown Voltage : V0 e o = 45OV

Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

C5368

Abstract: 2SC5368 transistor npn C536 transistor C536
Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed: tr = 0.5 s max , tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

C5368

Abstract: 2SC5368
Contextual Info: 2SC5368 東芝トランジスタ シリコンNPN三重拡散形 2SC5368 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • 高速です。 : tr = 0.5 s 最大 tf = 0.3 μs (最大)

Contextual Info: TO SHIBA 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS n r . n r rn N \ / F R T F R appi \c 8.3MAX. High Speed tr = 0.5//s Max. , tf=0.3yus (Max.) (IC = 0.8A)

C5368

Abstract: 2SC5368
Contextual Info: 2SC5368 東芝トランジスタ シリコンNPN三重拡散形 2SC5368 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • 高速です。 : tr = 0.5 s 最大 tf = 0.3 μs (最大)

c5368

Abstract: transistor npn C536 transistor C536 2SC5368 C536* transistor
Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed: tr = 0.5 s max , tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

c5368

Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

2SC5368

Contextual Info: TO SH IBA 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS High Speed tr = 0.5/^s Max. , /T (Max.) A O A \ U ( j — u .o a ; High Collector Breakdown Voltage : V0 e o = 45OV

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F TB1238BN F1814B LB 122s
Contextual Info: 2000-2 エネルギーとエレクトロニクス 東芝半導体システムカタログ TV編 Y1A1AH TVの機能別基本ブロック図 音声処理部 周波数シンセサイザ部 音声多重復調 SIF UHF/VHF チューナ サラウンド 機能 SAW

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ