2SC502 Search Results

2A marking

Abstract: 2SC5026 Silicon NPN Epitaxial Planar Type smd transistor MARKING 2A npn
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SC5026 Features Low collector-emitter saturation voltage VCE sat . High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

2SC5022

Abstract: TO220FM Hitachi DSA00108
Contextual Info: 2SC5022 Silicon NPN Triple difused Application TO–220FM High voltage amplifier Features • High brakedown voltage V BR CEO = 1500 V Min 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ———————————————————————————————————————————

Contextual Info: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)

Contextual Info: 2SC5024 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 300 MHz typ • High breakdown voltage and low output capacitance V CE0 = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Code MiniP3-F2

Hitachi DSA00164

Contextual Info: 2SC5025 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SC5025 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC5023 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 1000 MHz typ • High breakdown voltage and low output capacitance VCEO= 100 V. Cob = 4.5 pF typ • Suitable for wide band video amplifier

C5028

Abstract: 2SC5028 equivalent transistor c5028 2SA1891
Contextual Info: 2SC5028 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5028 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High collector power dissipation: PC = 1.3 W

2SC3652

Abstract: 2SC5025
Contextual Info: 2SC5025 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25°C

2SA1890

Abstract: 2SC5026
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)

2SC5028

Abstract: 2SA1891
Contextual Info: TOSHIBA 2SC5028 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 Unit in mm POWER SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : VCE (sat)~ —0.5V (Max.) High Collector Power Dissipation : P(} = 1.3W (Ta = 25°C)

2SA1891

Abstract: 2SC5028
Contextual Info: TO SH IBA 2SC5028 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : VCE (sat)~ —0.5y (Max.) High Collector Power Dissipation : P 0 = 1.3W (Ta = 25°C)

2SC5027E

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES 1 * High Speed Switching * Wide SOA TO-220 1 TO-220F *Pb-free plating product number: 2SC5027EL ORDERING INFORMATION Order Number Normal

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR  FEATURES * High Speed Switching * Wide SOA  ORDERING INFORMATION Order Number Lead Free 2SC5027EL-x-TA3-T 2SC5027EL-x-TF3-T 2SC5027EL-x-TF1-T

2SA1890

Abstract: 2SC5026 2sa189
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2

C5027 transistor

Abstract: C5027
Contextual Info: 2SC5027 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5027 High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Unit: mm Color TV Chroma Output Applications • High breakdown voltage: VCEO = 300 V

2SC5027EL-X-TA3-T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . „ FEATURES * High Speed Switching * Wide SOA „ ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T 2SC5027EL-x-TF2-T

C5028

Abstract: 2SC5028 2SA1891
Contextual Info: 2SC5028 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5028 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = 0.5 V (最大) (IC = 1 A) •

2SC5027 F

Contextual Info: UTC 2SC5027 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH RELIABILITY FEATURES * High Speed Switching * Wide SOA 1 TO-220 1.Base ABSOLUTE MAXIMUM RATINGS Tc=25℃ PARAMETER 2.Collector 3.Emitter SYMBOL RATINGS UNIT VCBO VCEO VEBO Ic Icp IB Pc TJ TSTG

Hitachi DSA002714

Contextual Info: 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V BR CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SC4708

Abstract: 2SC5023 2SC5023B 2SC5023C
Contextual Info: 2SC5023 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier

2SA1890

Abstract: 2SC5026
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)