2SC5026 Search Results

2A marking

Abstract: 2SC5026 Silicon NPN Epitaxial Planar Type smd transistor MARKING 2A npn
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SC5026 Features Low collector-emitter saturation voltage VCE sat . High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Code MiniP3-F2

2SA1890

Abstract: 2SC5026
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)

2SA1890

Abstract: 2SC5026
Contextual Info: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

2SA1890

Abstract: 2SC5026 2sa189
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2

2SA1890

Abstract: 2SC5026
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)

2SA1890

Abstract: 2SC5026
Contextual Info: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 ● 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5026 Features Low collector-emitter saturation voltage VCE sat . High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Symbol Rating

Contextual Info: Transistor 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

2SA1890

Abstract: 2SC5026
Contextual Info: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

2SA1890

Abstract: 2SC5026
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm M Di ain sc te on na tin nc ue e/ d 4.5±0.1 1.6±0.2 3 2 0.5±0.08

2SA1890

Abstract: 2SC5026
Contextual Info: Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage

2SA1890G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)

2SA1890

Abstract: 2SC5026
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3 2 0.5±0.08 1.5±0.1

2SA1890G

Abstract: 2SC5026G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G ue pl d in an c se ed lud pl vi an m m es

2SA1890

Abstract: 2SC5026
Contextual Info: Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open)

2SA1890

Abstract: 2SC5026
Contextual Info: Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3˚ 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 Symbol Rating Unit Collector-base voltage Emitter open

2SA1890

Abstract: 2SC5026 transistor 2sa1890
Contextual Info: Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Unit: mm • Absolute Maximum Ratings * 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat .

Contextual Info: Transistor 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3˚ 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08