2SA189 Search Results

Contextual Info: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO

2SA1892

Abstract: 2SC5029
Contextual Info: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Code MiniP3-F2

Contextual Info: TO SHIBA 2SA1893 2 S A 1 893 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS M EDIUM PO W ER AM PLIFIER APPLICATIONS Unit in mm 5.0 ±0.2 ^FE (1) —100~320 hF E ( 2 ) - 70 (Min.) Low Collector Saturation Voltage : v C E (s a t)= -1-o v (Max.)

2SA1896

Abstract: ITR05002
Contextual Info: 2SA1896 Ordering number : EN4718B SANYO Semiconductors DATA SHEET 2SA1896 PNP Epitaxial Planar Silicon Transistor DC / DC Converter, Motor Driver Applications Features • • • • Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

2SA1163

Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
Contextual Info: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry

2SA1890

Abstract: 2SC5026
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)

A1891

Abstract: transistor A1891 2SA1891 2SC5028
Contextual Info: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)

2SA1893

Contextual Info: 2SA1893 TO SH IBA 2 S A 1 893 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • hpE (1) —100~320 hFE(2) = 70 (Min.) Low Collector Saturation Voltage : VCE (Sat) ——1.0V (Max.)

2SA1892

Abstract: 2SC5029
Contextual Info: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation

2SA1899

Abstract: 2SC5052
Contextual Info: TO SH IBA 2SC5052 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5052 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 2.7MAX. DRIVER STAGE AMPLIFIER APPLICATIONS. • ^1 Complementary to 2SA1899 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

2SA1890

Abstract: 2SC5026
Contextual Info: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

Contextual Info: 2SA1893 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1893 Strobe Flash Applications Audio Power Amplifier Applications • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

2SA1896

Contextual Info: Ordering number:4718A PNP Epitaxial Planar Silicon Transistor 2SA1896 DC/DC Converter, Motor Driver Applications Features Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density,

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2

A1893

Abstract: 2SA1893
Contextual Info: 2SA1893 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1893 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

Contextual Info: 2SA1891 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 8 9 1 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • a.o±o.2 t m Low Collector Saturation Voltage •• V•nv^-Ci -n _ 0 S V f M a' -y ^ ( J ^ = _ 1 A)

Contextual Info: TO SH IB A 2SA1899 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC5052. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Collector-Base Voltage

2SA1897

Abstract: C11531E
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING UNIT: mm for high current control in small dimension. This transistor is ideal

Contextual Info: IC SMD Type Product specification 2SA1890 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 2.50-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 Low collector-emitter saturation voltage VCE sat +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SA1890

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar 2SA1890 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 2.50-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 Low collector-emitter saturation voltage VCE sat +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1