2SC5028 Search Results

C5028

Abstract: 2SC5028 equivalent transistor c5028 2SA1891
Contextual Info: 2SC5028 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5028 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High collector power dissipation: PC = 1.3 W

2SC5028

Abstract: 2SA1891
Contextual Info: TOSHIBA 2SC5028 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 Unit in mm POWER SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : VCE (sat)~ —0.5V (Max.) High Collector Power Dissipation : P(} = 1.3W (Ta = 25°C)

2SA1891

Abstract: 2SC5028
Contextual Info: TO SH IBA 2SC5028 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : VCE (sat)~ —0.5y (Max.) High Collector Power Dissipation : P 0 = 1.3W (Ta = 25°C)

C5028

Abstract: 2SC5028 2SA1891
Contextual Info: 2SC5028 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5028 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = 0.5 V (最大) (IC = 1 A) •

Contextual Info: TOSHIBA 2SC5028 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE PCT PROCESS < ; r * n i f t Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 8-0 ± 0.2 • Low Collector Saturation Voltage • • • High Collector Power Dissipation : P c = 1.3W (Ta = 25°C)

Contextual Info: T O SH IB A 2SC5028 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS • Low Collector Saturation Voltage • • • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)

2SA1891

Abstract: 2SC5028
Contextual Info: TO SH IBA 2SC5028 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : VCE (sat)~ —0.5y (Max.) High Collector Power Dissipation : P 0 = 1.3W (Ta = 25°C)

2SC1891

Contextual Info: 2SC5028 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm POW ER AM PLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • • • • Low Collector Saturation Voltage : v C E (s a t)= -° -5V (Max.) (Ic = -1 A ) High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)

Contextual Info: 2SC5028 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5028 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High collector power dissipation: PC = 1.3 W

C5028

Abstract: 2SA1891 2SC5028
Contextual Info: 2SC5028 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5028 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1.3 W

A1891

Abstract: transistor A1891 2SA1891 2SC5028
Contextual Info: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

Contextual Info: 2SA1891 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 8 9 1 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • a.o±o.2 t m Low Collector Saturation Voltage •• V•nv^-Ci -n _ 0 S V f M a' -y ^ ( J ^ = _ 1 A)

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SA1891

Abstract: 2SC5028
Contextual Info: 2SA1891 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 891 Unit in mm POWER SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat)~ —0.5y (Max.) (1^= -1A) • High Collector Power Dissipation : P0 = 1.3W(Ta = 25°C)

Contextual Info: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1891 U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCH IN G APPLICATIONS. • • • • Low Collector Saturation Voltage : v C E (s a t)= -° -5V (M ax .)d c= -1 A ) High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)