2SC3652 Search Results

2SC3652

Abstract: Hitachi DSA00493
Contextual Info: 2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3.5 V Collector current

Contextual Info: H ITACHI 2SC3652 SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER t . ü n i i it e r y Dimen'.Kww in mm I {JEDEC TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION I ABSOLUTE MAXIMUM RATINGS (Ta-25*C> ¡ S v iiiU ii; Item U nit 2SCJ6S2 I V ( no 50 V C ollector to e m itter voltage

Contextual Info: 2SC3652 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Outline T O -1 2 6 M O D 1. E m itte r 2. C o lle c to r 3. B a se Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O 30 V Collector to em itter voltage

Contextual Info: 2SC3652 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Outline TO -126 MOD Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^C B O 30 V Collector to em itter voltage VCEQ 20 V Emitter to base voltage

Hitachi DSA00164

Contextual Info: 2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO

2SC3652

Contextual Info: HITACHI 2SC3652 SILICON NPN EPITAXIAL HIGH FREQ UENC Y AMPLIFIER -.i te 1. C l I l ll K 'I 2, Cnlkxmt }. IÏ.M- <Tiimed s íi >ns in m in i JEDEC TO-126 MOD. • A B S O LU T E M AXIM UM RATING S (Ta=25X ) Ilcm M AXIM UM C O LLECTO R DISSIPATIO N 2SC3652

Contextual Info: 2SC3652 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Outline TO -126 MOD 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^C B O 30 V Collector to em itter voltage

Hitachi DSA00164

Contextual Info: 2SC5025 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SC5025 Absolute Maximum Ratings Ta = 25°C

2sk mosfet

Abstract: 2SJ113 2SJ120 2sj119 k312 display K312 2sc2610 2SK1197 2SK511 mosfet 2sk
Contextual Info: HITACHI 5.9 Television and CRT Displays 35 Block Diagram m Video Ro— G B O . Deflection Signal Vertical H orizontal y Deflection' Coil , Vertical ' Deflection , Coil 1 Horizontal Deflection Video output "I Focus _ _ Electrocie” I Ci Vertical Output

2SC3652

Abstract: 2SC5025
Contextual Info: 2SC5025 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25°C

2sk122

Abstract: HA11511CNT HA17384 2SC2611 HRP100 2sc2610 ha17385 2SC4927 1ss81 HA16666
Contextual Info: 30 HITACHI 5.5 Power Conversion 1 Switching Power Supply Control ICs range Type,No Vcc (V) max ICC imA) max F (kHz) max HA16654A 40 13 HA16664A 40 HA16666 Introduction lo (mA) max Topr fC ) 500 100 -20 to +85 Suitable for DP-18 FP-14 forward method 7 200

crt 1700

Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
Contextual Info: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

200W MOSFET POWER AMP

Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow

Horizontal TV block

Abstract: 2SC2611 HA11511CNT 11CNT 2SK1197 television block diagram 2sc2610 16107 2SK296 2SC4692
Contextual Info: HITACHI 5.9 Television and CRT Displays 35 Block Diagram m Video Ro— G B O . Deflection Signal Vertical H orizontal y Deflection' Coil , Vertical ' Deflection , Coil 1 Horizontal Deflection Video output "I Focus _ _ Electrocie” I Ci Vertical Output

2SC3170

Abstract: 2sc3904 NEC 2SC3358 2sc3358 2SC3357 2SC3505 2SC496 2SC3757 2SC4158 2SC3356
Contextual Info: - m s T ype No. a € Manuf. 0 a 0 a 0 a a a 0 a 2SC 3571 J 2 SC 3572 2SC 3573 2 SC 3574 2 SC 3575 2SC 3576 . = & 2 SC 3577 E T 2 SC 3 578 il B = SANYO TOSHIBA ffi NEC ÌZ HITACHI i i FUJITSU «J T MATSUSHiTA 2SC3039 ¡!M,3i II] 2SC4162 2SC3170 2SC4161 2SC3353

HA11511CNT

Abstract: 2SC2611 Horizontal TV block 2SC4896 horizontal COIL vertical IC tv crt GN12015C GN12030E 2SK296 GN4530C
Contextual Info: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES

2sk408

Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Contextual Info: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB

2SC3652

Abstract: 2SC5025 Hitachi DSA00493
Contextual Info: 2SC5025 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Outline 2SC5025 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings

TIS43 Unijunction Transistor

Abstract: acrian RF POWER TRANSISTOR motorola s200 hFE-200 to-92 npn 12v 50w class t amplifier acrian 2SC4127 TIS43 2sc3374 unijunction transistor TIS43
Contextual Info: ADDITIONAL TRANSISTORS Item Number RF 5 10 Part Number r Amplifi rs, fT POW S01080-2 S01115-2 S01127 S01143-1 S01219-5 S01222-6 S01229-1 S01278 S01405 S01416 20 S01438-2 S01446 S01477 S01487 S200-50 S25-50 S80-12 VAM120 VAM40 Polarity > 300 ThmsnCSFEFC ThmsnCSFEFC

Contextual Info: 2SC5025 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Outline 2SC5025 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings

Contextual Info: 2SC5025 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Outline 2SC5025 Absolute Maximum Ratings Ta = 25 °C Item Sym bol

2SJ56 2sk176

Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
Contextual Info: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G H orizon tal y D eflection' Coil , Vertical ' Deflection , Coil 1 I Horizontal Deflection Video output - "I Focus _ _ Electrocie” B O . Deflection Signal m Vertical Ci Vertical