2SC458
Abstract: 2SC2308 Hitachi DSA002755
Contextual Info: 2SC458, 2SC2308 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline 2SC458, 2SC2308 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55
|
Original
|
2sc4582sc23082sa10292sa1030+1hitachi dsa002755
|
PDF
|
2SC458
Abstract: 2sc2310 Hitachi DSA002755 2SC458 B
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032 Outline 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage
|
Original
|
2sc4582sc23102sa10312sa1032+2hitachi dsa0027552sc458 b
|
PDF
|
2SC458
Abstract: Hitachi DSA002755
Contextual Info: 2SC458 K Silicon NPN Epitaxial Application • Low frequency amplifier • Medium speed switching Outline 2SC458 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V
|
Original
|
2sc458hitachi dsa002755 |
PDF
|
2SC2310
Abstract: 2sc458 2sc458 transistor Hitachi DSA0076 ADE-208-1044A 2sC458 datasheet
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial ADE-208-1044A (Z) 2nd. Edition Mar. 2001 Application • Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
|
Original
|
2sc4582sc2310ade-208-1044a2sc458 transistor+2hitachi dsa00762sc458 datasheet
|
PDF
|
2sc458
Abstract: Hitachi DSA0076
Contextual Info: 2SC458 K Silicon NPN Epitaxial ADE-208-1045 (Z) 1st. Edition Mar. 2001 Application • Low frequency amplifier • Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol
|
Original
|
2sc458ade-208-1045hitachi dsa0076 |
PDF
|
2sc458
Abstract: 2SC2308 2sc458 transistor 2SA1029 2SA1030 2SC2310 Hitachi DSA0076
Contextual Info: 2SC458, 2SC2308 Silicon NPN Epitaxial ADE-208-1043 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2sc4582sc2308ade-208-10432sa1029+52sa103015lectronic2sc458 transistor2sc2310hitachi dsa0076
|
PDF
|
sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
|
Original
|
2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
|
PDF
|
transistor 2SC458
Abstract: 2sc458 2sc458 transistor transistors 2sc458
Contextual Info: ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
2sc458270hztransistor 2sc4582sc458 transistor+1transistors 2sc458
|
PDF
|
2sa1032
Abstract: 2SA1031 Hitachi DSA002754
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage
|
Original
|
2sa10312sa10322sc4582sc2310+1hitachi dsa002754
|
PDF
|
2SA1030
Abstract: 2SA1029 Hitachi DSA002754
Contextual Info: 2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline 2SA1029, 2SA1030 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30
|
Original
|
2sa10292sa10302sc4582sc2308+1hitachi dsa002754
|
PDF
|
transistor 2SC458
Abstract: 2sc458 transistor transistors 2sc458 2sc458 2SC458 datasheet "2SC458"
Contextual Info: ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
2sc458270hztransistor 2sc4582sc458 transistor+2transistors 2sc4582sc458 datasheet
|
PDF
|
transistor 2SC458
Abstract: 2sc458 transistor transistors 2sc458 2sc458 RG500
Contextual Info: ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
2sc458270hztransistor 2sc4582sc458 transistor+2transistors 2sc458rg500
|
PDF
|
2sc458
Abstract: transistor 2SC458 2sc458 transistor
Contextual Info: ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
2sc458270hztransistor 2sc4582sc458 transistor |
PDF
|
2SA1032
Abstract: 2SA1031 Hitachi DSA0097 2SC2310 2SC458
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item
|
Original
|
2sa10312sa10322sc4582sc2310+1hitachi dsa0097
|
PDF
|
|
|
2sc458
Abstract: 2SC2308 2SC2310 2SA1029 2SA1030 2SC23
Contextual Info: HITACHI 2SC458, 2SC2308 SILICON NPN EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SA1029 and 2SA1030 1. lir n il u r 2. C ollector 3. Bas« Uinven&ions in m m I ABSOLUTE MAXIMUM RATINGS (T a= 2 5 ûC) Item Sym bol MAXIMUM COLLECTOR DISSIPATION
|
OCR Scan
|
2sc4582sc23082sa10292sa1030+52sc23e500ii270hz2sc23102sc23
|
PDF
|
2SA1032
Abstract: 2SA1031 2SC2310 2sC2310 y
Contextual Info: HITACHI 2SA1031, 2SA1032 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Complementary pair with 2SC458 LG and 2SC2310 riW « i Q.WUuJ § «.»My p 1, Emiiier . it * . ar 2. i Colica« J. B»ït (Dimensioni in mm) I èp h Vi 5i V I —J ji ? (JEDEC TO-92)
|
OCR Scan
|
2sa10312sa10322sc45s2sc2310+12sc2310 y
|
PDF
|
2SC458A
Abstract: 2sc458c 2SC458
Contextual Info: HITACHI 2SC458 k SILICON NPN EPITAXIAL MEDIUM S P E E D SWITCHING 1. Kmiiicr 2. Colteaor 3. Base (Dimensions in mm (JE D E C TO-92) I A B S O L U T E M AXIMUM R A T IN G S 0 ^ 2 5 * 0 lie in Symbol MAXIM UM C O L L E C T O R D ISSIPA T IO N CURVE 2SC45B(k )
|
OCR Scan
|
2sc458ck2sc4582sc458a2sc458c |
PDF
|
2SA1029
Abstract: 2SA1030 2SA1031 2SA1032 2SC2308 2SC458
Contextual Info: HITACHI 2 S A 1 0 2 9 , 2 S A 1 0 3 0 S IL IC O N P N P EPITA X IA L LOW FREQUENCY AMPLIFIER Complementary pair with 2SC458 and 2SC2308 1. E m itte r ¿i ~ ó A 2. C o JIeao r 3. U j .sc (D im e n s io n s in rniu) ! L J |.Î7 r - (JEDEC TO-92) MAXIMUM COLLECTOR DISSIPATION
|
OCR Scan
|
2sa10292sa10302sc4582sc2308+4-10pa-18vr2sa10312sa1032
|
PDF
|
2SC2310
Abstract: 2sc458 2SC458A 2SC458C 2SA1031 2SA1032 2SC458CLG C45S 2sc2310h "2SC458"
Contextual Info: HITACHI 2SC458 LG , 2SC2310 SILICON NPN EPITAXIAL LOW FREQUENCY LO W NOISE AMPLIFIER Com plem entary pair with 2SA1031 and 2SA1032 no 1. limitier 2. Collector 3. h .i*c Dimensions in mm I A B S O L U T E MAXIMUM R A T IN G S (Ta=25°C) Item Symbol M AXIM UM C O L L E C T O R D ISSIP A T IO N
|
OCR Scan
|
2sc4582sc23102sa10312sa1032+62sc23i02sc458a2sc458c2sc458clgc45s2sc2310h
|
PDF
|
2SD428
Abstract: 2sc458 2SC386A 2SC654 2SC382 2SC1923 2SC693 2SC1252 2SC1906 2SC1815
Contextual Info: m ft % T ype No. 2SC 639 .• o 18 2SC 640 B Ü B ÍL -• 2SC 641 K 41 ~ £ Manuf. Z >¥ SANYO K 2 T O S HIBA 2SC4454 2SC75 2 ( G > T M 2SC4455 2SC75 2 ( G ) T M NE C 2SC1815 M S 2SDS18 2SC 642A K S 2SD818 2SC 643 ✓ X $ 2SD818 e T 2SC693 2SC2999 2SC S
|
OCR Scan
|
2sc44542sc7522sc18152sc458+132sc8282sc17402sc44552sds132sd8182sd4282sc386a2sc6542sc3822sc19232sc6932sc12522sc1906
|
PDF
|
2SC2310
Abstract: 2SC458 lg Logo
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
2sc23102sc458lg logo |
PDF
|
2SC2308
Abstract: 2sc458 2SA1029 2SA1030 2SC2310
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
2sc23082sc4582sa10292sa1030+12sc2310
|
PDF
|
2SC458
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
2sc458 |
PDF
|
|
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
