2SC3328 Search Results

c3328

Abstract: 2SC3328 2SA1315
Contextual Info: 2SC3328 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3328 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)

2SC3368

Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
Contextual Info: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360

Contextual Info: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 PO W ER AM PLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage VCE = 0.5V (Max.) (IC = 1A) • High Speed Switching Time : tstg= 1.0/iS (Typ.)

C3328 NPN Transistor

Abstract: c3328 2SC3328 transistor 2Sa1315 2sc3328
Contextual Info: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •

2SC3328

Abstract: 3AAG 2SC332 2SA1315 2SC3328 transistor
Contextual Info: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage • VCE ( s a t ) “ 0.5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC3558

Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Contextual Info: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

kin 52

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS PO W ER AMPLIFIER APPLICATIONS. PO W ER SW ITCHIN G APPLICATIONS. • • • U n it in mm Low Collector Saturation Voltage : v CE(sat) = - 0.5V (Max.) (Iq = - 1 A) High Speed Switching Time : tstg= 1 .0 /iS (Typ.)

2SA1315

Abstract: 2SC3328 A131 C2804 TRANSISTOR 2sa1315
Contextual Info: 2SA1315 TO SH IBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A)

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

C2383

Contextual Info: Powered by 1 TO-92MOD PACKAGE S E R IE S ICminer.com Application Electronic-Library 'c Type No. NPN 2SC2229 ! PNP t j 2SA949 Audio Drive 2SC2705 j 2SA1145 TV Chroma Out 2SC3334 ! 2SA1321 1 j 0.05 0.1 TV Video Out (A) 0.05 L-SSTM v CEO (mA) 0.5/0.8 10m 1

2sd2396

Abstract: 2SD2005 2SC4614 2SD1547 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650
Contextual Info: - ü £ T y p e No. / 2SD 2337 fö T te t te t te t s a 2SD 2338 □ — a t 2SD 2333 2SD 2334 ^ 2SD 2335 ^ 2SD 2336 / M anu f. « h m SANYO M TOSHIBA =£ « B HITACHI ÍI 2SD143Î 2SD23D0 2SD1878 2SD1545 2SD2311 2SD2252 2SD1547 2SC4744 2SD2251 2SD1547 2SC2882

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ic = lA) High Speed Switching Time : tstg = 1 0 / j s (Typ.) Complementary to 2SA1315

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

TO-3P

Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
Contextual Info: Transistors Industrial use Regulator T ransistors F1 Appli­ cation £ 3 9 Max Rating (Tc=25"C) Type No. V obo{V) VCHO(V) 10(A) Appli­ cation Package Pc(W) TJCO Max Rating (Tc=25*C) Type No. V c b o (V) VCEO(V) Package lc(A) Pc(W) 2SC3075 0.8 10 Power Mold

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4