2SC2840 Search Results

Contextual Info: 2SC2840D Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition)

Contextual Info: 2SC2840E Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2sc284

Abstract: 2SC2840 TRANSISTOR sanyo marking 2sc2999 2SC2999 10mmiS sanyo 2033 bc 207 npn
Contextual Info: 12E D I SANYO SEMICONDUCTOR CORP i 2SC2840 T - 3 7 W 0 '? b / - / S 0004103 ' N P N Epitaxial Planar S ilicon Transistor 2033 High Frequency GeneralPurpose Amp Applications 796C Features . FBET series. . Compact package enabling compactness of sets. High f T and small cre f T =600MHz typ, cre=0.5pF typ .

2SC2840

Abstract: 2sc284 high frequency amplifier
Contextual Info: Ordering number : 7 9 6 C NPN Epitaxial Planar Type Silicon Transistor 2SC2840 For High Frequency Amplifier Use

Contextual Info: 2SC2840C Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition)

Contextual Info: 2SC2840 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition)

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

nec 500t

Abstract: 2SC2999D 2SC2999E 2sc922 2SC185 JE9016 MPS6539 JE9018 2SC1303 BF369
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO . 5 10 15 2N2884 2SC320 2SC922 2SC922 g~~~: 25 30 BF154 BF369 2SC269 BFY19 2SC302 2SC302 2SCl779 2SCl779 ~~g~~g~ 35 40 2SC2999C 2SC2999D 2SC2999E SE5052 BF209 MPS6539 BF206 TIS56 ~~;l37 45 50 2N5236

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SD1028

Abstract: 2SK1597 2SK917 2SC1025 2SK919 2SB823 2SD977 2SC1051P 2SA1019 3SK190
Contextual Info: LIST O F D I S C O N T I N U E D T R A N S I S T O R S The following is an alpha-numerical list of the discontinued products as of October 31,1993. Type Number Replacement Type Number Replacement Type Number 2SA608SPA 2SA608NP 2SA608K-NP 2SA659 2SA930 2SA1017

SA1213

Abstract: 2SC2852 2SC2885 ka bs 89 2SC2888 2SC288 2SC2886 2SC2890 2SC2834 2SC2837
Contextual Info: - 136 - w 2SC2834 % tí: ÍST 2SC2834A 2SC2837 if y* r m m % > Pe Pe* V (V) (A) (W) (W) i fà te W (Ta=25ti) !c b 0 \ vn)<ix <*A) \î»ax/ VcB (V) (V) (V) (A) V(V)' Ic (A) Ib (A) 7 2.5 100 100 800 15 5 0.1 1 1.5 5 1 HS SW 900 500 7 2.5 100 100 900 15 5 0.1

2SC28

Abstract: 2SC2840
Contextual Info: F SAiYO i N0.796C NPN E p ita x ia l Planar Type S ilic o n T ran sisto r F o r H i g h F r e q u e n c y Am p l i f i e r Features . FBET series, • Compact package enabling compactness of sets. . High fT and small cre fj=600MHz typ p Cpg”0*5pF Absolute Haximiji Ratings at Ta=25°C

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905