2SC251 Search Results

IC 3A

Abstract: 2sc2516 2SA1069 2SA1069A
Contextual Info: Inchange Semiconductor Product Specification 2SA1069 2SA1069A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2516/2516A ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·High-frequency power amplifier

Contextual Info: 2SC2510 TO SHIBA 2 S C2 5 1 0 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)

E5OU

Abstract: 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555
Contextual Info: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

2SC2510

Contextual Info: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.)

2SC2518

Contextual Info: NPN SILICON POWER TRANSISTOR 2SC2518 DESCRIPTION The 2SC2518 is NPN triple diffused transistor designed for switching regulator, DC-DC converter and ultrasonic appliance ap­ PACKAGE DIMENSIONS in millimeters inches plications. FEATURES • High speed, high voltage switching.

2SC288a

Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517

20ISO

Contextual Info: H ITACH I 2SC2512 S IL IC O N N P N E P IT A X IA L VH P A M P L IF IE R V H F T V T U N E R M IX E R t ! Î J E D E C TO -92 I A B S O L U T E M A X IM U M R A T IN G S (Ta= 25‘ C} M A X IM U M C O L L E C T O R D IS S IP A T IO N CURVE Unit 2 SC 2512

2SC2510

Abstract: 2SC2510A
Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)

2SC2510

Abstract: Ferrite core TDK
Contextual Info: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r i R1 n i 2-30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE U nit in mm Specified 28V, 28MHz Characteristics Po = 150WpEp O utput Power Power Gain. G p= 12.2dB (Min.)

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

2sc2516

Abstract: 3A 100V npn LOW SATURATION VOLTAGE
Contextual Info: Inchange Semiconductor Product Specification 2SC2516 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers

C120D

Abstract: 2SC2519 XBee 2SC2561
Contextual Info: PANASONIC IN DL/ ELE Ki SEM IJ ?EC D | h T 3 EflSM □ 5|~7 - ^ v ’ 2SC2519 2 SC 2 5 1 9 '> U u > N P N x ^p'> -p \s~ ?\s — ^ J f c / S i N P N E p itaxial Planar t tifljjf iiiiif f l/R F Amplifier • 4# M /F e a tu r e s • P M /A M 7 M x R Fifipg, 5§}g, ift-g-,

but46a

Abstract: PEC730
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 -30 2SC251SM 2SC2535 2SC2535 2SC3570 STI401 STI413 IR413 BU129 BUT11 SPT3439 BUT11F BUT11F 2SC2518L MJ425 MJ425 MJ425 BUT46 BU120 ~~6~~1SK 35 40 2S09S7 PMS5K425 SOT1015 BUS11A BUT11A BUW11AF BUX46A

2SA1069

Abstract: 2sc2516 2SA1069A 17C IC
Contextual Info: SavantIC Semiconductor Product Specification 2SA1069 2SA1069A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2516/2516A ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·High-frequency power amplifier

2sc2516

Contextual Info: SavantIC Semiconductor Product Specification 2SC2516 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

2SC2517

Contextual Info: SavantIC Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

Ferrite core TDK

Abstract: 2sc2510
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 '30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE Unit in mm FEATURES: . Specified 28V, 28MHz Characteristics : Output Power : P o =150Wp e P : Minimum Gain : Gpe=12.2dB : Efficiency : ^c=35%(Min.)

Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)

2SC2510A

Abstract: 2sc2510 transistor application 2SC2510
Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)

Contextual Info: 2SC2512 Silicon NPN Triple Diffused HITACHI Application • VH F Am plifier • VH F TV Tuner, M ixer Outline TO-92 2 g 1 3 2 390 u 1 1. Base 2. Emitter 3. Collector 2SC2512 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SD1557

Abstract: SC4106 2sd1557 toshiba 2SC4211 2SC2751 2SC3170 2SC3403 2sc3807 2SC3905 2sc4654
Contextual Info: - 182 - m £ T y p e No. tt 2SC 4 1 0 M □— A 2SC 4103 □— A 2SC 4104 s % h m = m 2SC 4105 ✓ s 2 SC 4106 « Manuf. 2SC 4107 m h SANYO 2SC4406 M 2E TOSHIBA B tt N EC 2SC4117 2SC4180 2SC4250 2SC4086 HITACHI ±L 2SC2518 dr FU J I T S U ifi fâ T MATSUSHITA

3A 100V npn LOW SATURATION VOLTAGE

Abstract: 2SC2517
Contextual Info: Inchange Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers