2SC2335 TRANSISTOR Search Results

2Sc2335

Abstract: transistor 2sc2335 how to check ic ship 2SC2335 equivalent 2sC2335 TRANSISTOR equivalent 2sc2335 transistor
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such

2sc2335

Abstract: REGULATOR IC FOR 150V 2SC2335 equivalent
Contextual Info: Inchange Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO sus =400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A

2sc2335

Abstract: SUS CIRCUIT
Contextual Info: SavantIC Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-emitter sustaining voltage VCEO sus =400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A

2SC2335

Contextual Info: JMnic Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO sus =400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ・Switching time-tf=1.0 s(Max.)@IC=3.0A

2SC2335

Abstract: transistor2sC2335 MP-25 2sc233 2sc2335 transistor
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC2335 NPN 三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 工業用 ★ 2SC2335 は，高速度高耐圧スイッチング用として開発された

30L60

Abstract: 2SC2335 z225
Contextual Info: ÆàMOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching regulator's,inverters,DC -DC and conveter

BU409D

Abstract: rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r 'CBO Max hFE fT ON) Min (Hz) Max (A) Max (s) (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

2SC2335

Abstract: power transistor
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC2335

Abstract: MP-25
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: TO-220 MIN MAX A B 14.42 9,63 C D E F G H J 3,56 16,51 10.67 4,83 0,90 1,40 3,88 2,79 K L M N 12,70 DIM =r uf D^ U g - 1,15 3,75 2,29 2,54 - 2,03 7 3,43 0,56 14,73 6,35 2,92 31,24 DEG TO-220 Power Package Transistors NPN Maximum Ratings Type No. (V) Min

2N5296 pin configuration

Abstract: 2SC23350 2SC2073 2sc2233 2sc2238 2N5294 2N5296 2N6292 2SC1398 2SC1398P
Contextual Info: TO-220 DIM A B C D E F G H J K L M N MIN MAX 16,51 10,67 4,83 0,90 1,15 1,40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2,92 31,24 7 DEG 14.42 9,63 3,56 TO-220 Power Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified)

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage, high-speed,pow«r switching in inductive circuit, they are particularly suited for 11 5 and 220 V

SC22-3

Abstract: 2sc2238
Contextual Info: TO-220 < o >r * a I V S si PIN CONFIGURATION:— 1. BASE 2. COLLECTOR 3. EMITTER M_ MIN 14.42 9.63 3,56 DIM A B C D E F G h J K L M N MAX 16.51 10.67 4.83 0.90 1,40 1.15 3.75 3.85 2,29 2,79 2,54 3.43 0,56 12,70 14.73 6,35 2,03 2,92 31.24 7 1/2 DEG — - -

2SC23350

Abstract: 2SC22380 2SC2238Y 2SC2238-0 2SC2335-0 2sc2233 2sc2238 2SC1398Q 2N5296 pin configuration 2N5294
Contextual Info: PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MIN WAX A B 1 4 .4 2 9 ,6 3 16,51 C D E F G 3 ,5 6 H J 2 ,5 4 - 3 ,4 3 0 ,5 6 K L 1 2 ,7 0 - 1 4 ,7 3 M N 2 ,0 3 2 ,9 2 DIM - 1 ,1 5 3 ,7 5 2 ,2 9 7 1 0 .6 7 4 ,8 3 0 ,9 0 1,40 3 ,8 8 2 ,7 9 6 ,3 5

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

transistor MJ2501

Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.