2SC1675 L Search Results

2SC1675

Abstract: 2SC1675 npn TUNER
Contextual Info: 2SC1675 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

2SC1675

Abstract: TUNER
Contextual Info: wKU 2SC1675 NPN SILICON TRANSISTOR IO-92B 2SC1675 Is designed for use in AM converter, AM/FM IF amplifier and local oscillator of AM/FM t u n e r . ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SC1675

Abstract: 2SC1675 L
Contextual Info: 2SC1675 NPH S I L ICON TRANSISTOR TO-92B 2SC1675 is designed for use in AM converter, AM/FM IF amplifier and local oscillator of AM/FM tuner. A BSOLU TE MAXIMUM RATINGS ECB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SC1675 L

Abstract: 2SC1675 PA33 SC-43A VCE-60
Contextual Info: NEC NPN SILICON TRANSISTOR ELEC TR ON DEVICE 2SC1675 DESCRIPTION The 2SC1675 is designed for use in AM converter, A M /FM PACKAGE DIMENSIONS IF amplifier and local oscillator of A M /F M tuner. in millim eters inches 5.2 MAX. (0.204 MAX.) • Small output capacitance (CQb = 1.9 pF TYP.)

2SC1675

Abstract: 2SC1675 L
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1675 D E SC R IP TIO N The 2SC1675 is designed for use in AM converter, A M /F M PACKAGE D IM EN SIO N S IF amplifier and local oscillator of A M /F M tuner. i n millimeters inches 5 2 MAX. FEA TU R ES • Small output capacitance (Cob = 1.9 pF TY P .)

2SC1675

Abstract: T8224
Contextual Info: IO-92B 2SC1675 Is designed for use in AM converter, AM/FM IF amplifier and local oscillator of AM/FM tuner. ABSOLUTE MAXIMUM RATINGS ECB Collector- •Bai Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction &. Storage Temperature

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1675 TRANSISTOR NPN 1.EMITTER FEATURES z Low Collector Current z General Purpose Switching and Amplification 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC1675

Abstract: 2sc1675 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1675 TRANSISTOR NPN TO-92 1. EMITTER FEATURES •2SC1675 is designed for use in AM converter 2. BASE 3. COLLECTOR AM/FM if amplifier and local oscillator of AM/FM tuner

2SC1675

Abstract: 2SC1675Y 2SC1675-Y 2sc1675 transistor
Contextual Info: 2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low Collector Current  General Purpose Switching and Amplification TO-92 G H Emitter

2SC1675

Abstract: 2SC1675 npn
Contextual Info: ST 2SC1675 NPN Silicon Epitaxial Planar Transistor FM/AM RF AMP, MIX, CONV, OSC, IF The transistor is subdivided into three groups, R, O, Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1675

Contextual Info: ST 2SC1675 NPN Silicon Epitaxial Planar Transistor FM/AM RF AMP, MIX, CONV, OSC, IF The transistor is subdivided into three groups, R, O, Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: tgr | « 2SC1675 SEM ICO NDUCTO R FORWARD INTERNATIONAL ELECTRONICS LTD. TECH NICAL DATA NPN EPITAXIAL SILICON TRANSISTOR FM/AM RF AMP,MlX,CONV,OSC,IF * Collector-Emitter Voltage Vceo=30V * High Current Gain-Bandwidth Product fT=300MHz Typ * Low Collector Capacitance Cob=2.0PF(Typ)

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

2SC1675

Contextual Info: ST 2SC1675 NPN Silicon Epitaxial Planar Transistor FM/AM RF AMP, MIX, CONV, OSC, IF The transistor is subdivided into three groups, R, O, Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1675

Contextual Info: Transistors 2SC1675 USHA INDIA LTD STATIC CHARACTERISTIC BASE-EM ITTER ON VOLTAGE VC e = 6V 50 •fa T~ / — SO 10 8¿ 5a 2.0 E o 1.0 0.5 0.2 0.1 0.1 V ce 0.3 0 5 1 3 5 10 30 SO 1 2 5 10 0£ 10 1.2 Ic (mA), COLLECTOR CURRENT COLLECTOR INPUT CAPACITANCE

2SC2320

Abstract: 2SD786 2SC4280 2sc1832 2sc738 2SC1818 2SC 1827 F 2SD1203 2SC1831 2sc2631
Contextual Info: - VH - m. « tt Type No. 2SC 1818 S 'fé S « Manuf. SANYO $ T O SHIBA 2SD425 T X NEC T 2SC 1820 s±a 2SC2329 2SC 1822 2SC2082 2SC 1823 S±ü §±® 2SC 1824 *±a 2SC 1825 2SC 1826 ıil o' y-yry 2SC 1827 »*'' 2SC 1828 ¥> 2SC 1829 ^ 2SC 1830 *' 2SC 1831

2SC710

Abstract: 2SC1815 2SC696 2SC2320 2SC1398 2sc1740 2SC380TM 2SC945 2SC2410 2SC1687
Contextual Info: - 88 - s « Type No. tt 2SC 439 H * 2SC 440 = m * 2SC 441 * 2SC 442 * 2SC 447 * 2SC 448 £ ^ H $ 2SC 448 — * 2SC 450 h * 2SC 451 * 2SC 452 h m m m * 2SC 453 H Ü / h •<’ ' *£ « NEC m h MITSUBISHI □ — A ROHM 2SC461 2SC1687 2SC2410 2SC461 2SC1687

TL 2262

Abstract: 2SC2279 te 2304 2257A 2SC2050 2SC2371 2SC2611 2SD467 2sc710 2SC1815
Contextual Info: - J tt tö T fö T M anuf. € = W SANYO 2SC3416 • y'V irV y-yj-y ■y-ytry te T jä T 0 tL 0 tL S 2: 2SC1570 2SD400 2SD826 = # 0 V h a n s B m B ^ 0 tL K $ 2SC2274 2SC1755 2SC1755 CII m s s T ype No. 2SC 2257A 2SC 2258 2SC 2260 J 2SC 2261 ✓ 2SC 226 2 —2SC 2263

2SC1730

Abstract: 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661 2SC1654 2SC1655
Contextual Info: - 108 - Ta=25sC, *EPÎïTc=25‘ C *± 2SC1653 2SC1654 £ BM BM BW. m 1% VcBO Vc e o Ic(DC) Pc (V) (V) (A) (W) Pci (W) fs. m hF E I.CBO, (max) V'c b (V) (Uh) (min) (Ta-25T!) w t ( (max) ic/ÎE (A) VCE (V) [*EPiÎtyp{g] VcE(sat <,max) (V) (V) le (A) 1e (A)

2sc1815

Abstract: 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC2988 2SC387A 2SC829 2SD917
Contextual Info: - m tì: % Type No. Manuf. JÊ « SANYO 2 TOSHIBA 'S NEC B ÎL HITACHI ¡ÜÍ ± iS FUJITSU fò T MATSUSHITA * 2SC lb V - - 2SC 17 3K zsuöza * $ 2SC829 * 2SC 17A M. $ 2SC 18 S 2 2SC829 * * 2SC 21 S 2SC521A * 2SC 22 S m 2SD526 * 2SC 23 - d M 2SD526 a±a * 2SC 26

BF394 MOTOROLA

Abstract: 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2N3845 2N3845A 2N3855A 2S0654 TEC80130 TEC80130 2SC828 BF394 BF3950 2N1278 ~~~~~9 15 20 BF238 BF215 BF215 BF226 BF226 NR4210S NR421FS 2SC733 ~~g~~~ 25 30 BFW29 BFW29 BFW29 2SC367G 2SC504 2SC504 2SC504 2SC509G

2SC1840

Abstract: 2sc1775 2SC1737 2sc2655 2SC1684 2SC2510 2SC1815 2SC1010 2SC3311A 2SC1740
Contextual Info: - 122 - m « £ Type No. Manuf. m a m z 2SC 1737 2SC 1738 2SC 1739 * 2SC 1740 2SC 1741 ». 2SC 1742 □— A □— A □— A X ^ = n SANYO ÍÜ NEC £ HITACHI * ± a FU JITSU fâ T MATSUSHITA -=L H M ITSUBISHI O — A ROHM 2SC4641 2SC1840 2SC1740 2SC3382

2SC1222

Abstract: TO-92B 2SC1000 2SC1330 2SC923 2SC1328 2SC1327 2SC1213A 2SC1675 2SC858
Contextual Info: NO. UJ Li. X TYPE P O LA R ITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS CASE Pd mW 'c (mA) V CEO (V) V CE(SAT) 'c min max (mA) VCE (V) max 'c (V) (mA) Cob N.F. max max (MHz) (pF) (dB) 4 20 15 10 fT min 2SC858 2SC900 2SC923 2SC945 2SC1000

2SC373

Abstract: 2SC734 2SC1330 2SC923 2SC1000 2SC400 TO-92B 2SC1327 2SC735 2sc539
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS H,'E Ic VcEO mW (mA) (V) min mas VcE (mA) (V) C* N.F. fx max lc mm max mas (V) (mA) (MHz) (MHz) (dB) 2SC316 2SC372 2SC373 2SC380 2SC400 N N N N N TO-18 TO-92B TO-92B TO-92B