2SC466 Search Results

2SC4662

Contextual Info: Inchange Semiconductor Product Specification 2SC4662 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SC4667

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4667 Features High transition frequency: fT = 400 MHz typ. Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

2SC4666

Contextual Info: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)

2SC4664

Abstract: ITO-220 TP8V20FS
Contextual Info: SHINDENGEN Switching Power Transistor FS Series OUTLINE DIMENSIONS 2SC4664 Case : ITO-220 TP8V20FS Unit : mm 8A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SC4138

Abstract: 2SC4907 2SC4706 2sc3680
Contextual Info: Transistors for Switch Mode Power Supply For AC 80 to 130V input Specifications VCBO V VCEO (V) 250 200 Package IC (A) MT-25 (T0220) FM20 (T0220F) MT-100 (T03P) FM100 (T03PF) 2SC5271 5 2SC4073 2SC4418 5 2SC4662 2SC3832 2SC3890 7 2SC4130 500 400 10 2SC4138

2SC4666

Contextual Info: TO SH IBA 2SC4666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4666 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. nFE = ouu ~ _ nT Tig* _1.n 1_njPE • • • 2.1 ±0.1 1_ High Voltage High Collector Current

2SC4667

Contextual Info: TO SHIBA 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4667 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER Unit in mm APPLICATIONS. • High Transition Frequency : Pp = 400MHz (Typ.) • Low Saturation Voltage : V£E (sat) = 0.3V (Max.)

2SC4666

Contextual Info: TOSHIBA 2SC4666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4666 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • • • High hjpg High Voltage High Collector Current Small Packge 2.1 ± 0.1 1.25 ±0.1

2SC4667

Contextual Info: TO SH IBA 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4667 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS. • • • Unit in mm High Transition Frequency :Pp = 400MHz (Typ.) Low Saturation Voltage :V c e (sat) —0-3V (Max.)

Contextual Info: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)

2Sc4664

Abstract: soa 01 ITO-220 TP8V20FS
Contextual Info: SHINDENGEN Switching Power Transistor FS Series OUTLINE DIMENSIONS 2SC4664 Case : ITO-220 TP8V20FS Unit : mm 8A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40

tf s 544 a

Abstract: 2sc4978 2sc497
Contextual Info: Low Saturation Voltage Sw itching Transistors L S V series Bipolar transistors Parts No. EIAJ No. Absolute Maximum Ratings V cbo VCEO V eb o lc Ib Pt [V] [V] [V] [A] [A] [W ] -5 1796 -7 1679 -5 -60 -7 1600 -12 1601 -15 2SC4668 7 4669 10 4148 7 60 7 40 12 4151

2SC4663

Abstract: TP5V20FS
Contextual Info: i iv y - _ _ . F S SerieS Switching Power Transistor I W ß \f>£l3] 5a 2SC4663 NPN CTP5V20FS) — • - Ô2n3fi? 0003b3fl êOT Outline Dimensions A b s o lu te M axim um R a tin g s m Item i IE # Symbol Storage Temperature Junction Temperature a U9 9 ■

KU 03

Abstract: MARKING KU 2SC4666
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4666 Features High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA max Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

2SC4669

Abstract: TE10S4
Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SC4669 Case : E-pack TE10S4 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2sc4664

Abstract: TP8V20FS
Contextual Info: FS series Sw itching Pow er Transistor El 2SC4664 8a NPN O u tlin e D im e n sio n s (TP8V20FS) A b s o lu t e Maxim um R a tin g s « g S tora ge Tem perature s-g -g p s Ju n c tio n Tem perature a U ^ ^ X 'S Ji C o lle cto r to B a s e Voltage 3 U 7 ^ • X ; 7 ^ MJ±

2SC4662

Contextual Info: SavantIC Semiconductor Product Specification 2SC4662 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

Contextual Info: SHINDENGEN Switching Power Transistor FS Series OUTLINE DIMENSIONS 2SC4664 Case : ITO-220 TP8V20FS Unit : mm 8A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: SHINDENGEN Switching Power Transistor FS Series OUTLINE DIMENSIONS 2SC4663 Case : ITO-220 TP5V20FS Unit : mm 5A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

2042B

Abstract: 2SC4660 EN4692
Contextual Info: Ordering number:EN4692 NPN Epitaxial Planar Silicon Transistor 2SC4660 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions • High fT fT=2.2GHz typ · Large current (IC=300mA) · Adoption of FBET process. unit:mm 2042B

2SC4669

Abstract: soa 01 TE10S4
Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SC4669 Case : E-pack TE10S4 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SC4666

Contextual Info: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 · High voltage: VCEO = 50 V · High collector current: IC = 150 mA (max) · Small package