MPS Search Results

MPSA63

Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Contextual Info: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62

mpsa92

Abstract: mpsa93 MPS-A92 SA42 transistor MPSA92 MPS-A93 mpsa92 TRANSISTOR
Contextual Info: TOSHIBA TRANSISTOR MPSA92, 93 SILICON PNP TRANSISTOR FOR HIGH VOLTAGE APPLICATION FEATURES: • High Voltage : VCEO=-300V MPSA92 VCEO=“ 200V (MPSA93) • Low Saturation Voltage : ^CE (sat)= _ 0 • (Max.) @ Iq =-20 itiA lB=-2mA • Low Collector Output Capacitance

MPS-92

Abstract: mps92 MPS93
Contextual Info: TOSHIBA MPS92 MPS93 Discrete Semiconductors Silicon PNPTransistor For High Voltage Application Features • High Voltage - Vceo = -300V MPSA92 - Vceo = -200V (MPSA93) • Low Saturation Voltage " VcE(sat) = (Max-) @ b = -20mA, lB = -2mA • Low Collector Output Capacitance

MPS-082508-85

Abstract: 082508-85
Contextual Info: [MkzÏÏ MPS-082508-85/-86 800 to 2500 M H z High Linearity Amplifier F eature • +38 dBm Typical IP3 • +27 dBm Typical P1dB • 1 3 dB Typical Gain • 12 Volt Bias • Available in Surface M ount or Half Flange Package Description The MPS-082508-85 is broadband, self-biased GaAs FET amplifier. It is ideal for digital communications applica­

MPSA43

Contextual Info: DC COMPONENTS CO., LTD. MPSA43 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector

M24F

Abstract: M48A M48B m30c M24E M24MB m48c M55B
Contextual Info: .275 MAX . 1.688 MAX . .270 MAX . P art Number Des ign V oltage A mps MS C P L ife Hours C M24D C M24E 24.0 24.0 .100 .035 1,500 600 5,000 7,000 C -7A C -2F C M24F C M24H C M24X C M30A 24.0 24.0 24.0 30.0 .090 .020 .035 .072 1,120 100 600 2,000 7,000 10,000

mpsa92

Abstract: MPS-A92
Contextual Info: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-MPSA92 - Central Semiconductor MPSA92

Contextual Info: Mouser Electronics Related Product Links 806-MPS66RX-5000 - Kycon MPS66RX-5000

Contextual Info: DATA SHEET MPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

Contextual Info: F-212 TM STRIP 25 MPS–06–7.70–01–L–V 5,00mm .197" MPS–02–7.70–01–L–V MPS SERIES 25A DUAL LEAF SOCKET SPECIFICATIONS Dual leaf blade contacts Mates with: MPT 5mm pitch For complete specifications see www.samtec.com?MPS Insulator Material:

M7252

Abstract: M7239 M8112 M7263 M7238 M8022 M7234 M7264 M7236 M7255
Contextual Info: Ø.159 MAX. Ø.125 MAX. .375MAX. P art Number Design V oltage A mps MS C P L ife Hours F ilament T ype C M7234 C M7235 5.0 5.0 .030 .080 .030 .150 16,000 3,000 C -2F C -2R C M7236 C M7237 C M7238 C M7239 5.0 5.0 5.0 5.0 .115 .120 .115 .125 .200 .200 .100 .250

UHE SERIES

Contextual Info: UHE Series www.murata-ps.com Isolated, High Efficiency, 1.6" x 2" 2-10 Amp, 12-30 Watt DC/DC Converters Housed in smaller, 1.6" x 2" x 0.40" 41 x 51 x 10.2mm packages carrying the standard 2" x 2" pinout, MPS’s new UHE Series DC/DC Converters deliver more current/power

Contextual Info: Extract from the online catalog MPS-IH GY Order No.: 0201728 Illustration of color insulating sleeves for MPS metal part Insulating sleeve, Color: gray Product notes WEEE/RoHS-compliant since:

X84129

Abstract: AN107 AN103 AN95 X84129Z X84129ZI X841295 402 WP
Contextual Info: APPLICATION NOTE A V A I L A B L E AN95 • AN103 • AN107 MPS EEPROM X84129 128K µPort Saver EEPROM FEATURES DESCRIPTION • Up to 10MHz data transfer rate at 5V operator • 25ns Read Access Time • Direct interface to microprocessors and microcontrollers

SPDU079A

Abstract: ACT8990 XDS510 MPSD 74AS1004 JTAG(MINI)14 pin 74F175 74LVT240 ACT8999 TL7705A XDS510
Contextual Info: JTAG/MPSD Emulation Technical Reference 1994 Printed in U.S.A., December 1994 2617709–9741 revision A SPDU079A JTAG/MPSD Emulation Technical Reference December 1994 SPDU079 Printed on Recycled Paper Running Title—Attribute Reference IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

MPSA14

Abstract: MPSA64 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

FCI HIGH TEMPERATURE RJ45

Abstract: E82037 LR46923
Contextual Info: New Single and Multiport Modular Jacks Product Description FCI Electronics announces NEW Single Port SP , Single Port Shielded (SPS), Multiport (MP), and Multiport Shielded (MPS) RJ45 modular jack connectors for the Data Networking and the Telecommunications markets.

NPN RF Amplifier

Abstract: y-parameter MMBTH20 MPSH20 U407
Contextual Info: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A

mps8050

Abstract: B5G1 MPS805 DM07S
Contextual Info: MPS8050 _ National Discrete POW ER & Signal Technologies S em icon ducto r" MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings*

2N6727

Abstract: MPS6727 PN6727
Contextual Info: NATL SEMICOND DISCRETE H E D I bSO llBO 0DB7c!bii ä I ro Z 25 VO M T- 33-/7 National Semiconductor O IO M s 2N6727 PN6727 "O CO 0> MPS6727 IO M PNP General Purpose Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter Min

l5 transistor PNP

Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Contextual Info: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high

commodore

Abstract: PA6 GF 25 Commodore Semiconductor Group PA6 GF 30 "65C23" pa68 65C23
Contextual Info: ^ ^ COMMODORE & SEMICONDUCTOR 73 Í E l E B ^ B D00D01Ä fa ^ T - 5 S - S 3 ^ E co m m o d o re s e m ic o n d u c to r g r o u p MPS ' 65C23 TRI-PORT INTERFACE 65C23 TRI-PORT INTERFACE CONCEPT. The 65C23 TRI-PORT Interface TPI is designed to simplify the implementation of complex I/O operations