2SB163 Search Results

2SB1631

Contextual Info: Power Transistors 2SB1631 Silicon PNP epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C 5.0±0.1 1.0±0.2 2.5±0.1 13.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE sat

Contextual Info: Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification 1.0±0.2 5.0±0.1 2.5±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE sat

2SB1638

Abstract: 2SB1638A
Contextual Info: Power Transistors 2SB1638, 2SB1638A Silicon PNP epitaxial planar type Unit: mm 7.0±0.3 For low-voltage switching 3.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.8±0.2 7.2±0.3 3.0±0.2 0.85±0.1 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE sat

Contextual Info: 2S B 16 39 Transistors 2 S D 2 3 1 8 / 2 S D 19 44 High-current gain Power Transistor —60V, —3A 2SB1639 I • A b so lu te maximum ratings ( T a = 2 5 t) • F ea tu res 1 ) H ig h D C c u rre n t g a in . (T y p .4 4 0 a t V c e / I c = — 4 V / - •0 .5 A )

2sd1944

Abstract: 2SD2316 2SB1639 2SD2318
Contextual Info: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3A 2S B 1639 • A b s o lu te maxim um ratings (Ta=25'C ) •F e a tu re s 1 ) High DC current gain. (T yp.440 at 2 ) L o w Vce(m i). ( T y p .— 0 . 2 V V c e/ I c =

Contextual Info: Power Transistors 2SB1638, 2SB1638A Silicon PNP epitaxial planar type Unit: mm 7.0±0.3 For low-voltage switching Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to

2SB1638

Abstract: 2SB1638A
Contextual Info: Power Transistors 2SB1638, 2SB1638A Silicon PNP epitaxial planar type Unit: mm 7.0±0.3 For low-voltage switching +0.3 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to

2SD1944

Contextual Info: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3 A 2SB1639 •F e a tu re s 1 ) High DC current gain. (Typ.440 at Vce/lc*=—4V/—0.5A) 2 ) Low VcE(sai). (Typ,—0 ,2 V fit Ic/Ib =—2 /—0.05A) 3 ) Complements the 2SD1944.

2SD1944

Abstract: 2SD2316 2SD231B 2SB1639 2SD2318
Contextual Info: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3A 2S B 1639 • A b s o lu te maxim um ratings (Ta=25'C ) •F e a tu re s 1 ) High DC current gain. (T yp.440 at 2 ) L o w Vce(m i). ( T y p .— 0 . 2 V V c e/ I c =

2sb163

Abstract: 2SB1631
Contextual Info: Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification Unit: mm 5.0±0.1 • Features ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO

e50p

Abstract: 2SB1639 2SD2318
Contextual Info: High-current gain Power Transistor 60V, 3A 2SD2318 •Features 1) High DC current gain. 2) Low saturation voltage. •External dimensions (Units: mm) (Typ. VcE(sat) =0.5V at Ic / Ib=2A / 0.5A) 3) Complements the 2SB1639.

2SB1631

Contextual Info: Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification 1.0±0.2 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE sat • Allowing automatic insertion with radial taping

2SB1631

Contextual Info: Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification 10.0±0.2 18.0±0.5 Solder Dip • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC5283

Abstract: 2SC5157
Contextual Info: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli­ cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)