2N7261 Search Results

transistors H128

Abstract: H136 rg29B H-136
Contextual Info: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER JO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHF8130 2N7261 JANSRSN7S61 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U JANSR (100K RAD(Si)

2N7261

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U MSR (100K RAD(Si)

2N7261

Abstract: 2N7261U JANSF2N7261 JANSF2N7261U JANSR2N7261 JANSR2N7261U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U JANSR (100K RAD(Si)

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)

2N7261

Abstract: 2N7268 2N7268U JANSF2N7268 JANSF2N7268U 2N7261 equivalent 340A JANSR2N7268 JANSR2N7268U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

JANKCAR2N7389

Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Contextual Info: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments

2N7261U

Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
Contextual Info: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 2N7261U 2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

transistors H128

Abstract: 2N7261 IRHF7130 IRHF8130 JANSR2N7261 HG-18
Contextual Info: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R l AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7130 IRH FBI 3 0 ;n N-CHANNEL 2 IM-7261 2N7261 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs

2N7380

Abstract: 2N7261 JANSF2N7380 JANSR2N7380
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/614 DEVICES LEVELS 2N7380 JANSM (3K RAD(Si) JANSD (10K RAD(Si)

MSR 750

Abstract: MSR-2N
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U MSR (100K RAD(Si)

IRHC7260SE

Abstract: JANKCAR2N7389
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 April 2011. INCH-POUND MIL-PRF-19500/657B 26 January 2011 SUPERSEDING MIL-PRF-19500/657A 22 February 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 July 2013. INCH-POUND MIL-PRF-19500/601K 17 April 2013 SUPERSEDING MIL-PRF-19500/601J 14 March 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT POWER

2N7261

Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261
Contextual Info: PD - 90653B IRHF7130 IRHF8130 2N7261 2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

2n7425

Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Contextual Info: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998

transistors H128

Contextual Info: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R I AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 MEGA RAD HARD 100 Volt, 0.181], MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: JANSR2N7380 Qualified Levels: JANSD, JANSR and JANSF Radiation Hardened N-Channel MOSFET Qualified per MIL-PRF-19500/614 QPL RANGE and RAD LEVEL Radiation Level TID JANSD2N7380 JANSR2N7380 JANSF2N7380 10 Krad 100 Krad 300 Krad DESCRIPTION These products are well suited for Space level applications requiring Total Dose radiation

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/614 DEVICES LEVELS 2N7380 JANSM (3K RAD(Si) JANSD (10K RAD(Si)

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

IRHE7110

Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Contextual Info: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0

2N7261

Abstract: 2N7261U 2N7262 2N7262u 2N7261 equivalent U SUFFIX 2n7261 substitution marking 601f IRHEX130
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. INCH-POUND MIL-PRF-19500/601G 5 July 2006 SUPERSEDING MIL-PRF-19500/601F 16 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY