2N7380 Search Results

2N7380

Abstract: 2N7261 JANSF2N7380 JANSR2N7380
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/614 DEVICES LEVELS 2N7380 JANSM (3K RAD(Si) JANSD (10K RAD(Si)

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/614 DEVICES LEVELS 2N7380 JANSM (3K RAD(Si) JANSD (10K RAD(Si)

JANKCAR2N7389

Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Contextual Info: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments

2N7380

Abstract: beryllium oxide international rectifier cds 2N738 IRHY7130CM IRHY8130CM JANSH2N7380 JANSR2N7380
Contextual Info: Preliminary Data Sheet No. PD - 9.1274C IRHY7130CM IRHY8130CM 2N7380 2N7380 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/614] N-CHANNEL HEXFET TRANSISTOR MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 100Volt, 0.18Ω International Rectifier’s RAD HARD technology

2N7380

Contextual Info: Preliminary Data Sheet No. PD - 9.1274C International TOR Rectifier IRHY7130CM IRHY8130CM 2N7380 2N7380 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/614] N -C H A N N E L HEXFET TRANSISTOR MEGA RAD HARD 10OVolt, 0.18Q, MEGA RAD HARD HEXFET

2n7380

Abstract: 2N7381
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 February 2008. MIL-PRF-19500/614F 19 November 2007 SUPERSEDING MIL-PRF-19500/614E 29 November 2006 PERFORMANCE SPECIFICATION SHEET

IRHC7260SE

Abstract: JANKCAR2N7389
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 April 2011. INCH-POUND MIL-PRF-19500/657B 26 January 2011 SUPERSEDING MIL-PRF-19500/657A 22 February 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

2n7425

Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Contextual Info: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998

Contextual Info: 2N7380 Qualified Levels: JANSD, JANSR and JANSF Radiation Hardened N-Channel MOSFET Qualified per MIL-PRF-19500/614 QPL RANGE and RAD LEVEL Radiation Level TID 2N7380 2N7380 2N7380 10 Krad 100 Krad 300 Krad DESCRIPTION These products are well suited for Space level applications requiring Total Dose radiation

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

Contextual Info: I . .• I Preliminary Data Sheet No. P D - 9.1274C International n ,r IORKectitier R E PE T IT IV E A V A LA N C H E A N D IR H Y 7130C M irhy 8 1 3 ocm dv/dt R A T E D JA N SR 2N 7380 JA N SH 2N 7380 tREF: MILf ,R^ i 9A 5? ? ^ ] H EX FET T R A N S I S T O R

2N7380

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 August 2013. INCH-POUND MIL-PRF-19500/614H 13 May 2013 SUPERSEDING MIL-PRF-19500/614G 19 March 2012 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

2N7380

Abstract: 2N7381 T0-257AA
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 May 2002. INCH-POUND MIL-PRF-19500/614B 22 February 2002 SUPERSEDING MIL-PRF-19500/614A 3 May 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR,