2N7268 Search Results

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)

2N7261

Abstract: 2N7268 2N7268U JANSF2N7268 JANSF2N7268U 2N7261 equivalent 340A JANSR2N7268 JANSR2N7268U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)

MSR 750

Abstract: MSR-2N
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U MSR (100K RAD(Si)

2N7268

Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

krad

Abstract: 2E12 2N7268 SFFD150M SFFR150M frf150
Contextual Info: SÜH PRELIMINARY /A: äl i/ / J! // SOLID STATE DEVICES, INC 34 AMP 100 VOLTS 0.07 Q RADIATION HARDENED N-CHANNEL MOSFET 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 Designer’s Data Sheet FEATURES: • ■

H209

Abstract: H214
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l l O R 1 REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS SN7S68 JANSRSN7SB8 JANSHSN7S68 N-CHANNEL MEGA RAD HARO 100 Volt, 0.06512, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

JANKCAR2N7389

Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Contextual Info: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments

TD 422 BL

Abstract: MA-01841 2N7394 SI 6822 TO-276AC
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET

2N7268

Abstract: IRHM7150 IRHM8150 JANSH2N7268 JANSR2N7268
Contextual Info: PD - 90675B IRHM7150 IRHM8150 2N7268 2N7268 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100Volt, 0.065Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

2N7268

Abstract: rectifier diode 20 amp 800 volt H209 IRHM7150 IRHM8150 h206
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER Ix o r I REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7S68 JANSR8N7SGB JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065ÏÏ, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET

IRHC7260SE

Abstract: JANKCAR2N7389
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 April 2011. INCH-POUND MIL-PRF-19500/657B 26 January 2011 SUPERSEDING MIL-PRF-19500/657A 22 February 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

2N7268

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2013. MIL-PRF-19500/603J 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

SHOCK+SENSOR+083

Contextual Info: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83

2N7269

Abstract: 2N7394 2N7270 2N7268 2N7269u 2N7270 mosfet 2N7268U 2N7394U marking IRH
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 July 2006. MIL-PRF-19500/603G 10 April 2006 SUPERSEDING MIL-PRF-19500/603F 10 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED