2N6350 JANTX Search Results

2N6353

Abstract: rb1-e 2N6352
Contextual Info: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level 2N6350 JAN JANTX JANTXV 2N6351 2N6352 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage

2N6350

Abstract: 1000C 2N6351 2N6352 2N6353 JANTX 2N6351
Contextual Info: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level 2N6350 2N6351 2N6352 JAN JANTX JANTXV 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage

2N6350

Contextual Info: JAN, JAN, JAN, JAN, POWER DARLINGTONS 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX & & & & JANTXV JANTXV JANTXV JANTXV 2N6350 2N6351 2N6352 2N6353 DESCRIPTION U n itro d e N P N D a riin g ton s co n sist of a two tra n sisto r c ir c u it on a sin gle m o n o lith ic plan ar ch ip. The 2N6350

2N6351

Contextual Info: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33

2N6350

Abstract: 2N6350 equivalent
Contextual Info: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33

Contextual Info: MICROSEMI CORP/ WATERTOlilN WT'iba 00124^ 5DE D POWER DARLINGTONS JAN, JAN, JAN, JAN, 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX 07b & JANTXV & JANTXV & JANTXV & JANTXV IUNIT 2N6350 2N6351 2N6352 2N6353 /FEATURES DESCRIPTION • • • • Unitrode NPN Darltngtons consist of a

2N6350

Abstract: 2N6351 2N6353 2N6352 JANTX 2N6351 2N635 JANTX 2N6352 r6e2 JANTX 2n ze 003 ic
Contextual Info: JAN JAN JAN JAN POWER DARLINGTONS 5 Amp, 150V, NPN & JANTX & JANTX & JANTX & JANTX 2N6350 2N6351 2N6352 2N6353 D E S C R IP T IO N FEATURES • H igh Current Gain: up to 2000 min. @ lc = 5A • Low Saturation Voltage: as low as 1.5V max. @ lc = 2A • Peak Current: to 10A

Contextual Info: 2N6350+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k

Contextual Info: 2N6350+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k

Contextual Info: BIPOLAR NPN DARLINGTON POW ER T R A N S IST O R S TO-33 / JmD F‘ 24 TO-213/ VCE sat PEAK 'c AMPS hFE min/max < BVc e O VOLTS < o m DEVICE TYPE o PACKAGE max VOLTS 'c @ ' b A A 2N6350* 80 5.0 2000 1.0/5.0 1.5 5.0/0.005 2N6351* 150 5.0 1000 1.0/5.0 1.5 5.0/0.01

TO-213

Abstract: 2N6297 WF24 2N6351
Contextual Info: A POW ERHOUSE BIPOLAR TO-33 w b v CEO VOLTS PEAK >C AMPS hFE min/max < < o m D E /ICE TYPE PACKAGE o N PN D A R L IN G T O N POW ER T R A N S IS T O R S VCE sat max VOLTS •c @ !b A A 2N6350* 80 5.0 2000 1.0/5.0 1.5 5.0/0.005 2N6351* 150 5.0 1000 1.0/5.0

2N6350 equivalent

Abstract: 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. MIL-PRF-19500/472E 9 October 2007 SUPERSEDING MIL-PRF-19500/472D 9 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON,

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

2NXXXX

Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

472 M

Abstract: MIL-S-19500 2N3055 JANTX
Contextual Info: Summary List of API Q.P.L. Directory Types 2N2812 - JAN, JAN-TX, JAN-TXV 2N2814 - JAN, JAN-TX, JAN-TXV M IL-S-19500/415 MIL-S-19500/415 2N2880 - JAN. JAN-TX, JAN-TXV 2N3749 - JAN. JAN-TX, JAN-TXV M IL-S-19500/315 MIL-S-19500/315 2N3055 - JAN. JAN-TX, JAN-TXV

JAN2N5339

Abstract: JANTX2N4150 JANS2N3439
Contextual Info: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

Contextual Info: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80

UFN540

Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­