2n5863
Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V
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0qd007flt0-1022n5863mj2965+6to61 package12j52n83072n37132n49012n3447
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2N5415
Abstract: 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]
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tq-6642x42130x1302n6177+122n34392n54152n358s2n62132n60792n3055rca 2n3054 transistorbux66crca 2n3055rca 402502n3440rca transistor 508
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2N6491 SWITCH
Abstract: 2N6489 SWITCH 4-0992 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT
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it039io-2201lc-15ito-31+1190x902n6491 switch2n6489 switch4-0992ta86622n57812n59542n61072n62482n62922n6372
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2n23872n29882n2s892n2990+162n29912n29922n29932n29942n34392n34402ns6042ns5402ns154sd716sdt133052n56712n5005sdt425sdt7605sdt96302
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2N5415
Abstract: RCA411 BUX66C 2N3439 2N3440 2N5840 2N6079 2N6175 2N6177 2N6213
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 20 MHz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415
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tq-6642x42130x1302n6177+102n34392n54152n358s2n62132n6079rca411bux66c2n34402n58402n6175
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BU106
Abstract: 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510 2n5239 complement
Contextual Info: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V
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lc-30a130x130180x180210x210+10bu1062n58402n52402n65102n63082n58052n52392n58382n62512n5239 complement
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2N6180
Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037
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ito-391pt-85-11780-12sw30x30+1042x42103x1032n61802n32832n21022n38792n40362n53202n53222n6178
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2N6279
Abstract: 2N6281 2N6280
Contextual Info: SÛUARE D CO/ GENERAL 3918590 GENERAL =15 » • Ö5255GÖ D G Ü E 13 S SEMICONDUCTOR 95D b> 02135 D ■CR. General Sf- Semiconductor if Industries, Inc. 2N6279 2N6280 2N6281 5 0 U H H E T1 COHPBW Y 7S 33-/5" N P N S W IT C H IN G P O W E R T R A N S IS T O R S
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RCA TO-5
Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT
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2n6250
Abstract: Si948 2n6251
Contextual Info: File Number 523 HARRIS SEMICON] SECTOR 2N6249, 2N6250, 2N6251 SbE D 43G2571 004Q5B7 75Ö H H A S ^ 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors 3 5 - / 9 For Switching Applications in Industrial and Commercial Equipment Features: • High voltage ratings:
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2N6179
Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .
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lc-30a130x130180x180210x210+14bu1062n58402n52402n65102n63082n58052n6179power transistors 10a 400v pnp2n3055 rca2n2102bux17bux18rca 2n3055 transistortransistor bdx 65
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RCA-2N6249
Abstract: 2n62501 2N6250 2N6251 clare mercury relay HGP-I004 2N6249 solid state relay 220V 220V 30A Relay i947
Contextual Info: 3875081 G E SOLID STATE □ 1 DE I 3fl750fll OOlTlfiT L. High-Voltage Power Transistors File Number 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors F or S w itc h in g A p p lic a tio n s in Ind ustrial and C o m m e rc ia l E q u ip m e n t
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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2N3283
Abstract: 2N6180 npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6175
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037
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ito-391pt-85-11780-12sw30x30+1242x42103x1032n32832n6180npn darlington 400v 15a2n21022n38792n40362n53202n53222n61782n6175
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2N6214
Abstract: BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .
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lc-30a130x130180x180210x210+10bu1062n58402n52402n65102n63082n58052n62142n52392n58382n6251
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2N6180
Abstract: 4-0992 2N6178 2N6214 BUX66C 2N6179 2N6181 2N6211 2N6212 2N6213
Contextual Info: 2N6180PLASTIC FAMILY [p-n-p] silicon f j = 50 MHz min; Py = 25 W max 2N6181 2N6180 -50 -75 PNP Complement of 2N6179 PNP Complement of 2N6178 • I High-Breakdown Voltage, Fast Switch 2N6213 2N6214 BUX66 High-Breakdown Voltage, Fast Switch High-Breakdown Voltage, Fast Switch
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2n6180plastic2n61812n61792n6180+92n61782n62142n62112n6212bux17bux17a4-0992bux66c2n6213
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5N520
Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278
Contextual Info: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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an-6671g40002n3773 power amplifier circuit diagramsscr handbook, rca+8hc2000hrca transistor npn a13b0241cnpn transistor rca 46740659triac t6440mrca t2850ddiac d3202u
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