2N6260 Search Results

2N6260

Contextual Info: Inchange Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・High-fidelity amplifers ・Solenoid drivers

2N6260

Contextual Info: Product Specification www.jmnic.com 2N6260 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・High-fidelity amplifers ・Solenoid drivers ・Series and shunt-regulator driver

2N6260

Contextual Info: 2N6260 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

Contextual Info: 2N6260 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

40312

Abstract: 40372 2N3054 2N6261 2n3054 audio radiator 40911 40250 40310 2N6260
Contextual Info: 2N3054 F A M IL Y [n-p-n] silicon fy = 0.8 MHz min; P j up to 50 W max 2N TYPES 2N6260 2N3054 2N6261 BDY 71 40-V 29-W Hometaxial-Base, General Purpose 40 45 50 20-100 1.5 4 5* 25* 40 1.5 1.5 0.15 2.2 1.5 55-V 25-W Hometaxial-Base, General Purpose 55 60 90

2N6260

Contextual Info: SavantIC Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low saturation voltage ·Wide safe operating area APPLICATIONS ·Power switching circuits ·High-fidelity amplifers ·Solenoid drivers ·Series and shunt-regulator driver

2n3054

Abstract: 40250 Transistor 40250 40372 2N6261
Contextual Info: ^£.mi-C.ondu.ctoi Lpioduati, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 UsA 2N3054, 2N6260, 2N6261, 40250, 40572, 40910, 40911 Hometaxial-Base Medium- Power Silicon N-P-N Transistors Rugged Devices for Intermediate-Power Applications in

2N6261

Contextual Info: -Jiolitron [ ^ » © T ©ATTM.©' Devices. Inc MEDIUM VOLTAGE CH IP N UM BER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 06 CONTACT METALLIZATION B ase, Emitter a n d Collector Solder C o ated 95/5% le ad /tin . ASSEMBLY RECOMMENDATIONS It is ad v isa b le that:

2N3054

Abstract: 2n3773 power Amplifier 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . P t to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . A A i 9U X 9U le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z

042c1

Abstract: 2S090 SSP62 mrf486 2S0882 2sc2906 2S0898 042C3 B0329 THA13
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 TRM5504 TRM5504 TRM5504 TRM6014 TRM6014 TRM6014 TRM6504 TRM6504 -:-~~~g~: 25 30 35 40 45 50 TRM7014 TRM7014 TRM7504 TRM7504 TRM7504 TRL8014 TRL8014 TRL8014 2:;C;3001 2SC2906AK 2SC2906AM 2S0141 2S0141

RCA 40310

Contextual Info: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2n3054

Abstract: 40349
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

5N520

Contextual Info: General Transistor Corporation CASE le MAX V c e o (s u s ) = NPN Power Transistors VCE(SAT) IC/1B (V®A/A) VBE IC/VCE (V®A/V) 25-100 @ .5/4 40-200 @.5/10 25-100 @1/10 25-100 @1/10 1 @ 5/.05 5 @ 1/.125 .75 @ 1/.125 .75 @ 1/.125 1.7 @.5/4 1.4@ 1/10 .25

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

SILICON TRANSISTOR CORP

Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
Contextual Info: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O

Contextual Info: 8368602 SOLITRON DEVICES INC ~TS 95D D -f - J J - Ô J 02901 ^ÆEÊSrœu DE ö3t.öb05 Q0Ö2T01 b Devices, Inc. MEDIUM VOLTAGE C H IP IM U M BER N PN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 06 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.

AP1085

Abstract: 2N2033 AP1089 2N2034 2N1701 2N2034A 2N2035 2N2304 2N2828 2N2829
Contextual Info: A P I E L E C T R ON I C S I NC 00^3592 A P I 2b ELECTRONICS dF | DDMBSTE D OO DS n INC □ V^T^S^-ÒS 26C 00219 C O L L E C T O R C U R R E N T = 2 A M P S P N P T Y P E S - C O N T IN U E D D evice No C ase A P I 090 A P I 105 A P I 106 A P I 107 T O -66

RCA 40313

Abstract: 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . Pt to 300 W . V c E to 170 V H O M E T A X IA L -B A S E N-P-N POW ER T Y P E S le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.