MJE34 equivalent
Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881
|
Original
|
2n58792n58812n58802n5882+10tip73btip74mje34 equivalentbu1082sa1046bdx54bc 107 npn transistor pin configuration2sb56bu326bu100
|
PDF
|
tip420
Abstract: 12 volts 50 watt stereo amplifier schematic diagram LM391N 90 schematic diagram 800 watt power amplifier free d LM391N lm391 LM391N-100 LM391N equivalent 2N5880 equivalent TIP41A equivalent
Contextual Info: LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity performance distinguish this IC The LM391 is internally protected for output faults and thermal overloads circuitry providing output transistor protection is user programmable
|
Original
|
lm391tip42012 volts 50 watt stereo amplifier schematic diagramlm391n 90+6schematic diagram 800 watt power amplifier free dlm391nlm391n-100lm391n equivalent2n5880 equivalenttip41a equivalent
|
PDF
|
LM391N 90
Abstract: LM391N equivalent schematic diagram 800 watt power amplifier free d irc pw5 LM391N-100 12 volts 50 watt stereo amplifier schematic diagram 2N5880 equivalent LM391n lm391n amplifier schematic diagram 500 watt power amplifier free d
Contextual Info: LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity performance distinguish this IC The LM391 is internally protected for output faults and thermal overloads circuitry providing output transistor protection is user programmable
|
Original
|
lm391lm391n 90lm391n equivalentschematic diagram 800 watt power amplifier free d+7irc pw5lm391n-10012 volts 50 watt stereo amplifier schematic diagram2n5880 equivalentlm391nlm391n amplifierschematic diagram 500 watt power amplifier free d
|
PDF
|
LM391N 90
Abstract: texas instruments tip41 Vbe multiplier LM391N-100 W47B LM391N equivalent lm391n amplifier IC LM391 schematic diagram 800 watt power amplifier free d LM391
Contextual Info: LM391 LM391 Audio Power Driver Literature Number: SNVS753A LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity
|
Original
|
lm391snvs753alm391n 90texas instruments tip41+7vbe multiplierlm391n-100w47blm391n equivalentlm391n amplifieric lm391schematic diagram 800 watt power amplifier free d
|
PDF
|
2N3055 TO220
Abstract: BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B TIP29C PNP TIP30B TIP30C Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
|
Original
|
tip29btip30btip29ctip30c+16tip73btip74tip74atip74btip75tip75a2n3055 to220bd130npn transistor bd2413221 39002sa49bipolar transistor td tr ts tfmje350 equivalentse9302mje24822sc1419
|
PDF
|
2SA1046
Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547 Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and
|
Original
|
2n6547case32tip73btip74+13tip74atip74btip75tip75atip75b2sa1046tip147 pwmbu108to218 20a darlingtonbu326bu100mj423motorola transistor 2n6547
|
PDF
|
mj15003 equivalent
Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —
|
Original
|
mj15003mj15004tip73btip74+12tip74atip74btip75tip75amj15003 equivalent2n3055 mj150032n3055bu108motorola mj15003bdx54bu326bu100
|
PDF
|
2SC2246
Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,
|
Original
|
2n62822n62832n62842n6285+162n62862n6287tip73btip74tip74atip74b2sc22462sd669 equivalentrca1c03buw84bd875 equivalent2n6407bu1082n60262sd1178nsd134
|
PDF
|
transistor 2SA1046
Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V
|
Original
|
tip33btip33ctip34btip34c+16tip73btip74tip74atip74btip75tip75atransistor 2sa10462sc106bd2622sc1419se93022n6107bd263st t4 3580ft48mje34 equivalent
|
PDF
|
BU108
Abstract: 2SA1046 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage
|
Original
|
2n57452n43982n5758tip73b+11tip74tip74atip74btip75tip75atip75bbu1082sa1046bdx54bu326bu100
|
PDF
|
BU108
Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd180bd179tip73btip74+13tip74atip74btip75tip75atip75bbu1082sd1816bdx54motorola mj3000mjd42c equivalentbu326bu1002n5631
|
PDF
|
IR642
Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —
|
Original
|
bd787bd788tip73btip74+14tip74atip74btip75tip75air6422n6410ir30012sd3752sc931bu180bu108bd411-8bu500bd661
|
PDF
|
2SA1046
Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.
|
Original
|
2n6251tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sa10462n3055bu108transistor k 3596bu326bu100tl mje2955tmje3055t2n31742sc936
|
PDF
|
BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd166bd165tip73btip74+15tip74atip74btip75tip75atip75bbus48ap2sc1381mje15033 replacement2sa698bd477bd139.162n3072sc12242sd549bd139.10
|
PDF
|
|
|
BU108
Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
|
Original
|
mje8503awatt32tip73btip74+11tip74atip74btip75tip75atip75bbu108bdt32sc19432sc1419bu326bu100
|
PDF
|
TRANSISTOR BC 208
Abstract: 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40 – 160 @ IC = 20 mAdc
|
Original
|
mje3439tip73btip74tip74a+14tip74btip75tip75atip75btip75c2n6488transistor bc 2082n3055bu108mje3502sb527bdx54bu326bu100
|
PDF
|
MJ4502 EQUIVALENT
Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A
|
Original
|
mj4502mj802tip73btip74+12tip74atip74btip75tip75atip75btip75cmj4502 equivalentbu108bu806 complementbdx54bu326bu100
|
PDF
|
bd249c equivalent
Abstract: MJ15003 300 watts amplifier BU108 mje13009 equivalent BDX54 bd139 equivalent transistor Motorola case 77 tip122 D-PAK package 2SB56 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • • • • 1.0 AMPERE
|
Original
|
tip47tip50mje5730mje5731+16mje5731atip73btip74tip74atip74btip75bd249c equivalentmj15003 300 watts amplifierbu108mje13009 equivalentbdx54bd139 equivalent transistormotorola case 77tip122 d-pak package2sb56bu326
|
PDF
|
BU108
Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design
|
Original
|
mje18002d2tip73btip74tip74a+11tip74btip75tip75atip75btip75cbu108d44c12bdx54electronic ballast with mje13003bu326bu100
|
PDF
|
equivalent transistor TIP3055
Abstract: BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE sat = 1.1 Vdc (Max) @ IC = 4.0 Adc
|
Original
|
tip3055tip2955tip73btip74+16tip74atip74btip75tip75atip75btip75cequivalent transistor tip3055bd4185bdw59bd139.10equivalent transistor tip2955tip2955 application notebd139.6bd139.162n3055 replacement2sc1237
|
PDF
|
2SC1943
Abstract: 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices
|
Original
|
mj15011mj15012tip73btip74+14tip74atip74btip75tip75a2sc19432n50372sc23222sa1046bd349bd127buv18a2sc1903mje51952sd341
|
PDF
|
MJE371 equivalent
Abstract: MJ13019 ST BDW83C BU108 transistor d 1557 mje521 equivalent transistor 2N6546 2N3713 MOTOROLA BDX36 equivalent IR-6062
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE371 Plastic Medium-Power PNP Silicon Transistors 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry
|
Original
|
mje371mje521tip73btip74+15tip74atip74btip75tip75atip75bmje371 equivalentmj13019st bdw83cbu108transistor d 1557mje521 equivalent transistor2n65462n3713 motorolabdx36 equivalentir-6062
|
PDF
|
TIP48 NPN
Abstract: BU108 BU326 BU100 BD801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP47 * TIP49* TIP48 * TIP50* High Voltage NPN Silicon Power Transistors . . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. *Motorola Preferred Device
|
Original
|
tip47tip49tip48tip50+11tip73btip74tip74atip74btip75tip75atip48 npnbu108bu326bu100bd801
|
PDF
|
MJE34 pnp
Abstract: 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —
|
Original
|
2n60402n60432n60412n6044+122n60422n6045mje34 pnp2n6041 application2sc4932sa1046mj15003 300 watts amplifier2sc334bc 617 transistor equivalentbux98apin configuration npn transistor tip41cbu326
|
PDF
|
