2N4213 Search Results

2N3555

Abstract: 2N4110 2n2344 2N1595 2n2009 2N6332 2N3005 2N4212 2N3003 2n6335
Contextual Info: SOLID SILICON CONTROLLED RECTIFIERS ON STATE CURRENT piv CASE — =£!!L 275mA 280mA 350mA 390mA 500mA 1.0A 1.3A TO-18 TO-18 TO-18 TO-18 TO-5 TO-18 TO-5 TO-5 TO-5 2N4212 2N2009 2N2322 2N2322A 2N2344 2N3027 2N3030 2N3555 2N4213 2N2010 2N1595 2N1595A 2N2028

MCR50S-2

Abstract: 2SF521 2N4152 cl07f
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 C203F 2SF521 BT149F BT149F 2N1930 NMB12S 2N409S 2N1595A S051E C205F <!N<!u1u MCR22-2 MCRSOS-2 CSF 2N2323A 2N2345 ID200 2N4213 2N2323 MCR190S-2 ~~~l~~ 25 30 2N6237 Tll0S-05 Tll07•05 DRA2A 2NS333

2N4213

Abstract: 2N4214 2N4216 2N4219
Contextual Info: MOTOROLA SC - C D I O D E S / O P T O l Ö l DE | t.3t,7E5S OQTÛ'ïba 7 ~ 2N4213 thru Silicon Controlled Rectifiers 2N4219 Reverse B lockin g Triode Thyristor . all diffused PNPN devices designed for operation in mA/juA signal or detection circuits. •

2N4213

Abstract: 2N4214 2N4216 2N4219 anode gate thyristor motorola reverse blocking triode thyristor OPTO thyristor gate
Contextual Info: MOTOROLA SC •£DI OD E S/OPTO} ÔÏ DE | b3b7ESS DDTfllha 7 -// 2N4213 thru 2N4219 S ilic o n Controlled Rectifiers Reverse B lockin g Triode Thyristor . . . all diffused PNPN devices designed fo r operation in mA/juA signal o r detection circuits. • •

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

CQ417

Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686
Contextual Info: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A

2N3800

Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

2n4319

Abstract: 2N4195 2N3940 2N3990 2n4369 2n4158 IR122D3 2n3986 rca TYN40BG 2N3754
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755

2n2345

Abstract: 2N2344 2N3555 2n6336 2N2346 2N3560 2N2009 2N2012 2N2325 2N2348
Contextual Info: A SILICON CONTROLLED RECTIFIERS U O' 180mA TO-18 ro I o a 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 500mA 350mA TO-18 TO-5 TO-18 2N948 30 2N2683 •2N2687 2N5719 2N4109 TO-5 2N2009 2N5720 2N949 2N950 2N5721 2N951 2N2684 2N2688

2N4148

Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

Contextual Info: DIGITRON SEMICONDUCTORS 2N4212-2N4216, 2N4219 SILICON CONTROLLED RECTIFIERS 1.6 AMPS RMS, 25-400 VOLTS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N4319

Abstract: ST SEMICON INC aeg diode Sid 20 l 2N4205 2N4193 2N4166 2N4177 2N3759 TAG 600 2N4180
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755

2n4214

Contextual Info: 2N 4213 thru 2N 4219 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . all diffused PNPN devices designed fo r operation in mA/jxA signal or detection circuits. • • • • Low-Level Gate Characteristics — I q t = 100 ¡ i A Max @ 25°C

S106D1

Abstract: scr s106d1 SC165M HSC160MTA TRIAC S106D1 S106B1 IS08s c106b1 scr TO92 triac SIPT515TA
Contextual Info: INDUSTRY PN HUTSON PN 2N1842 SPS020/F PACKAGE TYPE 1/2" SCR 2N1843 2N1844 SPS020/F SPS120/F 1/2" 1/2" SCR SCR 2N1845 2N1846 SPS220/F SPS220/F 1/2" 1/2" SCR SCR 2N1847 2N1848 SPS420/F SPS420/F 1/2" 1/2" SCR SCR 2N1849 2N1850 SPS420/F SPS625/F 1/2" 1/2" SCR

2n4214

Contextual Info: 2N 4213 thru 2N 4219 S ilic o n C o n tro lle d R e ctifie rs R e verse B lo c k in g T rio d e T h y risto rs . . . all diffu se d PNPN devices designed fo r o p e ra tio n in mA//aA signal o r detection circuits. • • • • Low -Level Gate C haracteristics — I q j = 100 /xA M ax a 25°C

2N4212

Abstract: 2N6239 2N6238 2n4216 2N4214 MCR106-1 mcr1906 MCR1906-1 2N2322 2n2325
Contextual Info: MOTOROLA SC 34 -CDIODES/OPTO} 6367255 MOTOROLA SC d ëT J b 3 b 7 a s s 34C <D IO D E S /O P T O Goaâm? 38147 □ SILICON THYRISTOR DIE continued) 2C2326 die no. LINE SOURCE — DTL638 Device assembled from this die type are similar to the fol­ lowing device types:

2N4219

Abstract: 2n4214
Contextual Info: MOTOROLA SC D I O D ES / O P TO b4E ]> b3t>7255 0005^ 12 774 • M 0 T 7 2N 4213 thru 2N 4219 S ilico n Controlled Rectifiers R e v e rse B lo c k in g T rio d e T h y risto rs . all diffused PNPN devices designed for operation in mAZ/iA signal or detection