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    2N342 Search Results

    2N342 Datasheets (271)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N342
    Advanced Semiconductor Silicon Transistor Scan PDF 814.48KB 5
    2N342
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 393.54KB 5
    2N342
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 71.82KB 1
    2N342
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 106.46KB 1
    2N342
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 92.8KB 1
    2N342
    Unknown Vintage Transistor Datasheets Scan PDF 49.16KB 1
    2N342
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.78KB 1
    2N342
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.78KB 1
    2N342
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.26KB 1
    2N342
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 160.31KB 1
    2N342
    Unknown GE Transistor Specifications Scan PDF 42.75KB 1
    2N342
    Unknown Transistor Replacements Scan PDF 62.12KB 1
    2N342
    Semitronics Silicon Power Transistors Scan PDF 296.46KB 4
    2N3420
    Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=60 / Ic=3 / Hfe=40-120 / fT(Hz)=40M / Pwr(W)=0.8 Original PDF 54.91KB 1
    2N3420
    Microsemi 3 Amp, 85V, NPN Silicon Power Transistors - Pol=NPN / Pkg=TO39 / Vceo=60 / Ic=3 / Hfe=40-120 / fT(Hz)=40M / Pwr(W)=0.8 Original PDF 64.32KB 3
    2N3420
    Microsemi NPN Medium Power Silicon Transistor Original PDF 57.64KB 2
    2N3420
    Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=60 / Ic=3 / Hfe=40-120 / fT(Hz)=40M / Pwr(W)=0.8 Original PDF 10.79KB 1
    2N3420
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 393.36KB 5
    2N3420
    API Electronics 5 Amp NPN Transistors Scan PDF 221.4KB 2
    2N3420
    API Electronics Short form transistor data Short Form PDF 56.12KB 1
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    2N342 Price and Stock

    VPT Components

    VPT Components JANSR2N3421

    JANSR2N3421 - Bulk (Alt: JANSR2N3421)
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    VPT Components JANTX2N3421S

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    TTI JANTX2N3421S EDWF 100
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    VPT Components JANSR2N3421S

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    VPT Components JANTXV2N3421

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    VPT Components JAN2N3421S

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    TTI JAN2N3421S EDWF 110
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    2N342 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3421

    Abstract: 2N3419 2N3420 1000C 2N3418 2N3418S 2N3419S 2N3420S
    Contextual Info: TECHNICAL DATA 2N3418, S, JAN, TX, TXV 2N3419, S, JAN, TX, TXV 2N3420, S, JAN, TX, TXV 2N3421, S, JAN, TX, TXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/393 NPN SILICON MEDIUM-POWER TRANSISTOR 2N3418, 2N3419, 2N3420, 2N3421 TO- 5 MAXIMUM RATINGS Ratings


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    2n34182n34192n34202n3421+5mil-prf-19500/3931000c2n3418s2n3419s2n3420s PDF

    2N5415

    Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


    OCR Scan
    o-111o-5/39o-1142n5415 PDF

    BU606D

    Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
    Contextual Info: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan
    bfx34bss44bsw67bsw68+15bu125bu125sbuy47buy48buy49sbuy68bu606dbu606bu608dbuy18s2n341b2n48952n51542n5415sis 650 PDF

    2N5415

    Contextual Info: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421


    OCR Scan
    00q033lbfx34bss44bsw67+7bsw68bu125bu125sbuy47buy48buy49s2n5415 PDF

    2N3421

    Contextual Info: 2N3421 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


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    2n3421o205ad1-aug-02 PDF

    2N3420AL

    Contextual Info: 2N3420AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


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    2n3420alo205aa20-aug-02 PDF

    2N3420A

    Contextual Info: 2N3420A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016)


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    2n3420ao205ad1-aug-02 PDF

    2N3420SMD05

    Contextual Info: 2N3420SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


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    2n3420smd05o276aa15-aug-02 PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan
    2n329a2n3322n3332n334+162n3352n3362n3372n3382n3392n3402n35682n35692n7022n24062n25392n24072n35652n36382n14702n2224 PDF

    2N3421SMD

    Contextual Info: 2N3421SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


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    2n3421smdo276ab15-aug-02 PDF

    2N3420

    Contextual Info: 2N3420 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    2n3420o205ad1-aug-02 PDF

    2N5251

    Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
    Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX


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    2n28802n34182n34192n3420+112n34212n34392n34402n37402n37412n37492n52512n52502n53272n39022n3996 equivalent transistor PDF

    2N3420

    Contextual Info: 2N3420 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    2n3420o205ad17-jul-02 PDF

    Contextual Info: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


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    2n3421ao205ad17-jul-02 PDF

    TRANSISTOR SE 135

    Abstract: 11C1 diode p 2N3421
    Contextual Info: General Semiconductor Industries, Inc. ' f e "11" Typical Device Types: 2N3418 - 2N3421, 2N4150 | DIODE & TRANSISTOR CHIPS nnAi u ui ItPfJ NPN T R A N S IS T O R C H IP 10 AMP Fast Switching Bonding Pad Areas Base 1 31 x 13.5 mils Front Metallization: Aluminum


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    2n34182n34212n415011c-1+511c-2100ma200matransistor se 13511c1 diode p PDF

    Contextual Info: SILICON PLANAR NPN TRANSISTOR 2N3421 • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO


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    2n3421ju0396o-205ad PDF

    Contextual Info: 2N3429 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)175# I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition)1.5 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0


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    2n3429freq20k PDF

    Contextual Info: 2N3421+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)125 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200# I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0


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    2n3421freq40m PDF

    Contextual Info: 2N3423 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2n3423 PDF

    Contextual Info: 2N342+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)60m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.0 @I(C) (A) (Test Condition)20m


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    2n342 PDF

    2N3421ASMD05

    Contextual Info: 2N3421ASMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


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    2n3421asmd05o276aa15-aug-02 PDF

    2N3421A

    Contextual Info: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


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    2n3421ao205ad1-aug-02 PDF

    2N3418

    Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036
    Contextual Info: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:


    OCR Scan
    2n34182n34192n34202n3421+6tix3033tix3034tix3035tix3036tata ak 90tnr*g PDF

    2N3419

    Abstract: 2N3420 2N3418
    Contextual Info: NPN Meduim Power Silicon Transistor 2N3418, 2N3419, 2N3420 & 2N3421 2N3418S, 2N3419S, 2N3420S & 2N3421S Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/393 • TO-5, TO-39 (TO-205AD) Package Maximum Ratings


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    2n34182n34192n34202n3421+62n3418s2n3419s2n3420s2n3421smil-prf-19500/393o-205ad PDF