2N263 Search Results

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

2n2635

Contextual Info: 2N2635 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2635 Availability Online Store

Contextual Info: 2N2637 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)25 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125# I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3043

Abstract: IN455 2N3047 2N930 TEXAS INSTRUMENTS 2N3046
Contextual Info: TYPES 2N3043 THRU 2N3048 DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 0 8 , A U G U S T 1 9 6 3 - H E V t S E D A P R IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS AND HIGH-GAIN LOW-NOISE AUDIO AMPLIFIERS • Electrically Similar to 2N2639-2N2644 Series

pnp germanium to36

Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652

Contextual Info: 2N2636 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)25 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125# I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3729

Abstract: 2N4072 2N2947 2n4073
Contextual Info: 8134693 SEMICQA_ qp PE | 5 1 3 * ^ 3 ~f _ □□□□13b b | DIFFERENTIAL AND DUAL AMPLIFIERS Cont’d Type NPN 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2453A 2N2919 2N2920 2N2652

2n2635

Abstract: 2N985 2N461 GERMANIUM SMALL SIGNAL TRANSISTORS 2n4525 2N3449 2N398A 2N427 2N963 2n964
Contextual Info: GERMANIUM PNP MESA TRANSISTORS Type 2N828A 2N829 2N808 2N960 2N961 2N962 2N962 2N963 2N964 2N964 2N964A 2N965 2N966 2N967 2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975 2N985 2N2635 2N3449 VcBO y Max f^Emo V Max 15 15 30 15 12 12 12 12 15 15 15 12 12 12 15

solitrondevices

Abstract: 2n263 SOLITRON MC 150 transistor
Contextual Info: 012 56 8368602 SDLITRON DEVICES .INC S0LITR0N DEVICES INC ti D T- Sjf_r DE|ñ3t.ñboa oooiasb t |~ NO. 6079/2N263V SILICON TRANSISTOR ENGINEERING DEVICE SPECIFICATION GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in a double-ended stud-mounted case*

2N2094

Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
Contextual Info: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821

2N2639

Abstract: 2N2640 2N2642 2N2644 2N2641 2N2913 2N2643 25CC
Contextual Info: 2N2639 thru 2N2644 M AXIM U M RATINGS CASE 654-07, STYLE 1 Rating Symbol Value Unit Collector*Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage v EBO 5.0 Vdc jC 30 mAdc Collector Current— Continuous One D2e Both Die Total Device Dissipation @ T a = 25°C

SJ 2036

Abstract: jsw marking 2N2631 2N2876 transistor JSW 12 ic sj 2036 transistor JSW 2N263 CLA transistor JSW 70
Contextual Info: M IL -S - 1£500/303 NAVY 22 O cto b er 1964 MILITARY SPECIFICATION TRANSISTOR, T Y PE S 2N263I AND 2N2876 1. SCOPE 1.1 D e sc rip tio n .- T h is sp e c ific a tio n c o v e rs the d e ta il re q u ire m e n ts fo r a silic o n , NPN tr a n s is to r and is

2N2632

Contextual Info: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60

2N2632

Contextual Info: 2N2632 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)90 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

RCA-2N2876

Abstract: 2N2876 2n2631 rca 2N2631 iz04 N2631 RCA TO60 TRANSISTORS MC-150 2N26 rca MIL ID
Contextual Info: File No. 32 RF Pow er T ran sisto rs 2N2631 2N2876 Solid State Division R C A - 2 N 2 8 7 6 and 2N2631 are t r i p l e ­ d i ffused p lana r t r a n s i s t o r s of the silico n n -p-n type. T h e s e d e v i c e s are i n t e n d e d for a p p l i c a t i o n s in AM, FM, and C W se rvi ce

Contextual Info: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822

2N2639

Abstract: 2N2642
Contextual Info: TY P ES 2N2639 T H R U 2N2644 D U A L N -P-N S ILIC O N TR A N S IS T O R S B U L L E T IN N O . D L -S 7 2 1 1 6 7 9 , M A R C H 1 9 7 2 TW O TRA N SISTO R S IN ONE PACKAGE REC O M M EN DED FOR • Differential Amplifiers • High-Gain, Low-Noise Audio Amplifiers

2n185

Abstract: BC3 csr 2N244 2N200 BC337-18 2N326 2N176 BC337-16-5 BC337-10 Delco
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N2523 MPS929 MPS930 MPS930 BC485 BC485-18 BC485-5 BC485L BC485L18 BC485L5 ~~g~:~g BC337-10 2N3046 2N3047 2N3048 2N2639 2N2640 2N2641 2SC828A ~~~~-5 25 30 BC302-5 BC302-5 MT4101 PE210D 4101 4101 2N2434

2N2639DCSM

Contextual Info: 2N2639DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

Transistor 78 L 05

Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

2N2639

Abstract: 2N2641 2N2642 2N2643 2N2913
Contextual Info: MOTOROLA SC XSTRS/R 1ZE F I b3b?2S4 0Gat,2b4 1 I 2N2639 thru 2N2644 M A X IM U M RATINGS CASE 654-07, STYLE 1 Rating Collector*Emitter Voltage Symbol Value Unit VCEO 45 Vdc Coliector*Base Voltage VCBO 45 Vdc Emitter-Base Voltage Vebo 5.0 Vdc Collector Current — Continuous

2N2947

Abstract: 2N4072 2N1335 2N2453 2N2951 2N1342 2N3729 2N2480 2N2480A 2N2639
Contextual Info: MG 8134693 SEMICOA DIFFERENTIAL AND DUAL AMPLIFIERS Cont’d Type NPN 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2453A 2N2919 2N2920 2N2652 2N2652A 2N2223 2N2223A 2N2060 60 60 75 80 45 45 45

2N2631

Abstract: 2N28 2N2876
Contextual Info: M IL -S -1 9 5 0 0 /3 0 3 N A V Y A M END M ENT 3 26 F e b r u a r y 1 9 7 1 _ SU PERSEDING 1 / AM ENDM ENT 2 14 M a rc h 1966 M ILITA R Y SP E C IF IC A T IO N TRANSISTOR, T Y P E S 2N2631 AND 2N 28” 6 T h is a m e n d m e n t f o r m s a p a r t of M ilita ry S p e c ific a tio n M IL -S -1 9 5 0 0 / 503(NAVY), 22 O c to b e r 1964.

BC337-18

Abstract: JC5010 sot23 h23 LOW-POWER SILICON NPN BC337-16-18 PE210 BC107 to92 BC337-16-5 BC337-10 mps92
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N2523 MPS929 MPS930 MPS930 BC485 BC485-18 BC485-5 BC485L BC485L18 BC485L5 ~~g~:~g BC337-10 2N3046 2N3047 2N3048 2N2639 2N2640 2N2641 2SC828A ~~~~-5 25 30 BC302-5 BC302-5 MT4101 PE210D 4101 4101 2N2434