TIME80N Search Results

Contextual Info: STTA12006T2 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.8

Contextual Info: SDR1006 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)100

Contextual Info: STTA12006TV1 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.8

Contextual Info: CGD1451 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0m V(RRM)(V) Rep.Pk.Rev. Voltage60 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.34 @I(FM) (A) (Test Condition)1.0m

Contextual Info: BYV255-200 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0

Contextual Info: BYV255V150 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0

Contextual Info: STTA12006TV2 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.8

Contextual Info: SDR1010 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage850m

Contextual Info: SDR1004 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)100

Contextual Info: SDR1008 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)100

Contextual Info: BYV255V100 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0

Contextual Info: BYV255-150 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0

Contextual Info: G820 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage60 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage.70 @I(FM) (A) (Test Condition)50m

BYV255V200

Contextual Info: BYV255V200 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0

Contextual Info: UFT12760 Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current60 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)60

Contextual Info: BYV255V50 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0

Contextual Info: 2N3751 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3749 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2880+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3749+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ^EDI ED I7F33512C ELECTRONIC CCSGN& NC.I 512Kx32 Flash 512Kx32 Flash Module Features 2,4,8 megabyte C M O S Flash Module Family The E D I Flash Family Is a five-volt—only In system Flash program­ mable and eraseable read only memory module. The m odules are

332 Ic 8 pin

Abstract: 4X512K ic 331
Contextual Info: ^EDI E D I7F33S 12C 512Kx32 Flash EL£CTRONC CESGN& M C I Features 512Kx32 Flash Module 2,4,8 megabyte CMOS Flash Module Family Organization: 512Kx32 2x512Kx32 4x512Kx32 Fast Read Access Time-80ns Five Volt Only Reprogramming Internal Program Control and Timer

Contextual Info: 2N2658 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

EDI7F233512C80BNC

Abstract: EDI7F33512C EDI7F33512C100BNC EDI7F33512C120BNC EDI7F33512C150BNC EDI7F33512C80BNC
Contextual Info: ^EDI ED I7F33512C ELECTRONIC CCSGN& NC.I 512Kx32 Flash 512Kx32 Flash Module Features 2,4,8 megabyte C M O S Flash Module Family The E D I Flash Family Is a five-volt—only In system Flash program­ mable and eraseable read only memory module. The m odules are