2N 326 TRANSISTOR Search Results

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

BU 290A

Abstract: 3055N 2N3055 3773 P BDW 38 BD130 2 amp 20 - 60v diode p1060 BD181
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PRO FESSIO N A L/CO M M ERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 2N 2N 2N 2N 2N

2N3584

Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
Contextual Info: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension

PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A

Abstract: BUX53
Contextual Info: Power transistors • NPN « Epitaxial Planar » Am plifier and switching NP N « Planar E p itaxte » A m p lific a tio n e t co m m u ta tio n Type Case Boitier *tot W * V CEx 'c VCEO (V) (A) h21E m in max 'c (A) VCEsat / ' C (V) / (A /l('AB) fT (MHz)

transistor Amp 3055

Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@

8 pin ic 3773

Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442

2N6758

Abstract: 6757
Contextual Info: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.

BC 641

Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
Contextual Info: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76

2N2243

Abstract: H21E 2N3439 pnp case to-39
Contextual Info: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15

Contextual Info: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili­ con planar epitaxial PNP transistors in JedecTO-39

LKI300

Abstract: ao 6786 2n6785 Unitrode 678-6 dioda s31
Contextual Info: TH W T T R O ^ r T O R 9347963 D in i c1347clki3 0 0 1 0 5 3 b F UNITRODE CORP 92D 10536 D POWER MOSFET TRANSISTORS jtx jtxv 400 Volt, 3.6 Ohm N-Channel T - 3 <?~o7 FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown

N mosfet 100v 500A

Contextual Info: DE~1 cl B 4 7 citi3 OOIQSBM 1 UNITRODE. CORP 9347963 U N I T R O D E CORP 920 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Ghannel 1Û5 2 4 D7"-J^-o7 JTX jtkvI K FEATURES DESCRIPTION • • • • • Th e Unltrode power M O SFET design u tilize s the m ost advanced technology available.

N2222

Abstract: 2N222A 2N222 2N222-A 2N2708 2n3600 N222 BFS59 BFS60 BFS61
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89

sy 710 diode

Abstract: IC 6757 diode sy 710 2N6758 2N6757
Contextual Info: POWER MOSFET TRANSISTORS , JTX 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability • Qualified to M IL-S-19500/542A 2N6757 J' JTX' JTXV 2N6758 DESCRIPTION

TO205AD

Abstract: 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866 2N4428
Contextual Info: IF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE 145A-09 (.300” Stud) CASE 215-02 CASE 244-04 (.280" Stud) CASE 79-03 (TO-205 Type) CASE 305-01 (.204" Stud) CASE 305A-01 (.204” Pill) 3ASÊ 316-01 For UHF Applications

2n6788

Abstract: 2N6787 S/2N6787
Contextual Info: 2N6787 2N6788 POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros»h> and a high transconductance.

y 6763

Contextual Info: TE UNITRODE CORP 9347963 D E | c1347c]b3 DDIOSOÛ 3 | ~ U NI TRO DE CORP 92D 10508 D POWER MOSFET TRANSISTORS , 1TX JTXV 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second Breakdow n • Excellent T e m p e ra tu re S tability

2n222 TRANSISTOR

Abstract: N2222 2n222a transistor 2n222a 2n222A TRANSISTOR n3055 2n222a npn transistor 2N222-A 2N222 ZT1482
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.

2N5862

Abstract: 2N5660 3051 3026LS 2N5680 3036 100CC 2N5661 2N5662 2N5663
Contextual Info: JAN, JAN, JAN, JAN, POWER TRANSISTORS 2 Amp, 300V, Planar NPN FEA TU R ES • Meets MlL-S-19500/454 • Collector-Base Voltage: up to 400V » D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & JANTXV 2N5660

MRF309

Abstract: 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177 MRF604
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.

C495 transistor

Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

2N3419

Abstract: 2n341 2N3420 2N3421
Contextual Info: POWER TRANSISTORS JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN, JANTX, & JANTXV 2N3421 3 Amp, 80V, Planar NPN FEATURES • M eets MIL-S-19500/393 • C ollector-Base Voltage: up to 125V • Peak Collector Current: 5A

2N6510

Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass

2n222a

Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.