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    2N 3137 Search Results

    2N 3137 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    86093487313755ELF
    Amphenol Communications Solutions Din Headers and Receptacles, Backplane connectors, Right Angle Header Solder-to-Board Style C/2 48 ways, Class II, Tail Length: 3mm PDF
    86093487313745ELF
    Amphenol Communications Solutions DIN Right Angle Header Solder-to-Board Style C/2 48 ways, Class III, Tail Length: 3mm PDF
    86093487313765E1LF
    Amphenol Communications Solutions DIN Headers & Receptacles, Backplane Connector, Header, Right Angle, Through Hole, Style C/2, 48 ways, Class I PDF
    86094327313755E1LF
    Amphenol Communications Solutions DIN Headers & Receptacles, Backplane Connector, Header, Right Angle, Through Hole, Style C/2, 32 ways, Class II PDF
    86094327313765E1LF
    Amphenol Communications Solutions DIN Headers & Receptacles, Backplane Connector, Header, Right Angle, Through Hole, Style C/2, 32 ways, Class I PDF

    2N 3137 Datasheets (23)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3137
    Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF 54.91KB 1
    2N3137
    General Transistor Transistors for RF Applications Scan PDF 27.37KB 1
    2N3137
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 192.13KB 1
    2N3137
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.23KB 1
    2N3137
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 159.34KB 1
    2N3137
    Unknown GE Transistor Specifications Scan PDF 37.79KB 1
    2N3137
    Unknown Transistor Replacements Scan PDF 73.44KB 1
    2N3137
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 86.44KB 1
    2N3137
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 124.26KB 1
    2N3137
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 84.96KB 1
    2N3137
    Unknown Vintage Transistor Datasheets Scan PDF 55.77KB 1
    2N3137
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.62KB 1
    2N3137
    Semico Differential and Dual Amplifiers / UHF Power Amplifiers Scan PDF 160.65KB 1
    2N3137
    Semico Differential and Dual Amplifiers / UHF Power Amplifiers Scan PDF 76.81KB 1
    2N3137
    Semitronics Metal Can Transistors - Silicon Small Signal Transistors Scan PDF 337.33KB 4
    2N3137
    SGS-Thomson Transistor Datasheet Scan PDF 161.24KB 3
    2N3137
    Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF 37.63KB 1
    2N3137
    STMicroelectronics Shortform Data Book 1988 Short Form PDF 38.86KB 1
    2N3137
    Thomson-CSF Signal Transistors and Field Effect Transistors 1976 Scan PDF 64.54KB 3
    2N3137
    Thomson-CSF Condensed Data Book 1977 Scan PDF 36.64KB 1
    SF Impression Pixel

    2N 3137 Price and Stock

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    Motorola Semiconductor Products 2N3137

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    Component Electronics, Inc 2N3137 8
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    Fairchild Semiconductor Corporation 2N3137

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    2N 3137 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO-129

    Abstract: 2N4933 TO128 PACKAGE 2N5687 TO-128
    Contextual Info: Typ type f MHz Vcc P¡n Pout 2N 3137 T 2N 3309 2N 3375 250 50 250 400 20 50 25 28 0,1 2 0,4 1 0,4 15 2 3 2N 2N 2N 2N 3553 3632 3733 3866 175 175 400 400 28 28 28 28 0,25 3,5 4,0 0,1 2N 2N 2N 2N 3924 3926 3927 4040 175 175 175 400 13,6 13,6 13,6 28 2N 2N 2N


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    o-117o-129o-128o-131+5to-1292n4933to128 package2n5687to-128 PDF

    2N6488 MOTOROLA

    Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    2N3137

    Abstract: pbgi 2n 3137 CE020
    Contextual Info: 2N 3137 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M . PLAN A R E P IT A X IA L Class-CVH F Power amplifier to 250 MHz A m plifica te u r de puissance VHF en classe - C jusquà 250 MHz v CEO 20 V fT 500 MHz min '’ out 400 mW min.


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


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    2n3553o-117o-128o-131+11o-12920pept 3866 power transistortransistor 571transistor 3866 stransistor d 5702 e d 5703t 3866 transistortransistor 2n 5688transistor t 38663866 transistor2n rf transistor PDF

    2N3375

    Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
    Contextual Info: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted


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    2n337510/32-nf-2a-threado-117o-128+11o-131o-129transistor 2n33752n5708transistor 3866 s2n39272n4440texas rf power transistor2n rf transistorto128 package2n5690 PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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    TO128 PACKAGE

    Abstract: la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428
    Contextual Info: 2N5708 SIL IC O N NPN VH F POWER T R A N S IST O R mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 70 V


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    2n5708o-128o-117o-131+11o-129to128 packagela 4127t 3866 power transistorla 4440 ic2n41272n51022n40402n40412n57112n4428 PDF

    t 3866 power transistor

    Abstract: transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor
    Contextual Info: 2N3866 SIL IC O N NPN V H F POWER T R A N S IST O R V H F /U H F M E D IU M POW ER A M P L IF IE R • • 1 W at 400 MHz with 10 dB Gain Distributed Construction mechanical specification All d im e n s io n s a re in rnm TO-39 absolute maximum ratings Tease = 25 °C


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    2n3866o-117o-128o-131+11o-12920pept 3866 power transistortransistor 3866 stransistor d 5702 e d 5703transistor t 3866t 3866 transistor3866 transistortransistor 38662n3866 rf output design5698 transistor PDF

    2N5070

    Abstract: LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor
    Contextual Info: 2N5070 SIL IC O N NPN V H F POWER T R A N S IST O R Emitter Internally Grounded to Case Intermodulation Distortion Better than 30 dB at 25 W P.E.P Emitter Resistor Stabilised mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 65 V


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    2n507010/32-nf-2a-threado-117o-128+11o-131o-129la 4440 ict 3866 power transistor32-nf-2a-threadla 41272n3927to602n5026to128 packagec 3866 transistor PDF

    2N3632

    Abstract: LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927
    Contextual Info: 2N3632 SILICO N NPN VHF POWER TRANSISTO R Distributed Wafer Interdigitai Construction Integrated Diffused Emitter Ballast mechanical data Pins 1,15 " 10/32-NF-2AThread All dimensions are in mm TO-60 * absolute maximum ratings Tease - 25 °C Collector-Base V o lt a g e .


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    2n363210/32-nf-2a-threado-117o-128+11o-131o-129la 4127la 4440 ictransistor d 5702 e d 57032n5102effioic 44402n4431136 2n2n3927 PDF

    t 3866 power transistor

    Abstract: TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040
    Contextual Info: 2N5709 SIL IC O N NPIM V H F POWER T R A N SIST O R 873 80 W PEP SIN G L E S ID E B A N D T R A N SIS T O R mechanical specification D IA 4 L absolute maximum ratings T Ca s e = 25 °C Collector-Base V o l t a g e . 7 0 V


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    2n5709o-117o-128o-131+11o-12920pept 3866 power transistortic 136 transistor2n50162n51022n5026ic 44402n4127to128 package2n4040 PDF

    LA 4440 IC

    Abstract: LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375
    Contextual Info: 2N5109 SIL IC O N NPN VH F POWER T R A N SIST O R • • • • • Ideal for C A T V Applications Minimum Gain-Bandwidth Product 1.2 GHz 11 dB at 200 MHz Low Distortion Low Noise mechanical data Collector-Base V o lt a g e . 40 V


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    catalogue des transistors bipolaires de puissancebrochage des circuits integresh3c1-07lb 124 transistor equivalente+6transistor a2222equivalent of transistor bc212 bc 214bfw-11 terminalssescosem transistorequivalente transistor bc 141brochage bcw91 PDF

    N6034

    Abstract: TIC 122 Transistor 2M6039 2N6029 2N6034 2N6037 2N6039 K1461 2N6035 2N6036
    Contextual Info: M O TO R OL A SC X S T R S /R 15E D | F b3b?354 ' OGflHSfiO T | 2N602Ô 7 :3 J MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . « designed fo r general-purpose amplifier and low-speed switching


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    2n60292n60342n60352n6036+72n60372n60382n6039n6034tic 122 transistor2m6039k1461 PDF

    bf 671

    Abstract: BF116 BFW93 667 2N BFW 72 NPN/bf 671 699 NPN 2N3571 ESM 182 BF183
    Contextual Info: TO 18 CB 6 CB 146 f 139 B (CB 76) Silicon NPN transistors, VH F - UH F amplification and oscillation T8mb = 25 0C Transistors N P N silisium, amplification e i oscillation U H F et V H F Case T yp « Boitier ptot (mW) VCEO (V) f GP (dB) h 21 E min max >C


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