2SK300 Search Results

Hitachi DSA0076

Abstract: 2SK3000
Contextual Info: 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0. 25Ω typ. (VGS = 10 V, I D = 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability

2SK300

Contextual Info: SONY CORP/COM PON ENT PROPS 2SK300 • 7^ 2 2 SONY* Silicon N-Channel Junction FET . " — Description Making the best of Epitaxy and Pattern latest technology, 2SK300 accomplishes so far unattainable levels of performance. Usage with head amplifiers for video cameras and the

2SK300

Abstract: VCO 100mhz
Contextual Info: 2SK300 SONY ÿt>iy3>F E T ec n e -tä H B 2 S K 3 0 0 « * « t< D X e- 9 ♦ V 4 a W t '< 9 - -y * t t : mm a ft * * « L T . « * « Ü T d ^ ô » o f:« v v f tiiÉ i S ttû ‘« ^ n i L fz. t -r*»*ÿ, VTR^O' v- , K T yrtCÂttflt-Çr^ a i t * . « §

2SK3009

Abstract: F8S60VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3009 F8S60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

2SK3000

Abstract: DSA003726
Contextual Info: 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 Z 1st. Edition December 1997 Features • Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability

2SK300

Abstract: E90910
Contextual Info: 2SK300 SONY Silicon N-Channel Junction FET D escrip tio n Making the best of Epitaxy and Pattern latest technology, 2SK300 accomplishes so far unattainable levels of performance. Usage with head amplifiers for video cameras and the like, ensures the highest efficiency.

2SK3004

Abstract: FM20
Contextual Info: 2SK3004 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 250 V V(BR) DSS VGSS ±20 V ID ±18 A ±72 35 (Tc = 25ºC) (Ta = 25ºC) Ratings typ min 250 Unit max I GSS V I D = 100µA, VGS = 0V

2SK3004

Abstract: FM20
Contextual Info: 2SK3004 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 250 V V(BR) DSS VGSS ±20 V ID ±18 A ±72 35 (Tc = 25ºC) (Ta = 25ºC) Ratings typ min 250 Unit max I GSS V I D = 100µA, VGS = 0V

2SK613

Abstract: G8TE 2SK613-4 2SK613-2 2SK613-3 2SK300 yr yf 2SK300U 2SK13
Contextual Info: 2SK300 SO NY ÿt>iy3 > FET ec ne-täH B 2 S K 3 0 0 « * « t< D X e- « L T . 9 ♦ V 4 a W t '< 9 - -y * t t : mm a ft * * « * « Ü T d ^ ô » o f : « v v f t i i É i S t t û ‘« ^ n i L fz. t - r * » * ÿ , V T R ^O 'v -, K T yrtC Â ttflt-Ç r^

2SK3001

Abstract: Hitachi DSA00297
Contextual Info: 2SK3001 GaAs HEMT Low Noise Amplifier ADE-208-597 Z 1st. Edition December 1997 Features • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) • Small package. (CMPAK-4)

2SK3003

Abstract: 2SK3003 equivalent FM20
Contextual Info: 2SK3003 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 200 V V(BR) DSS VGSS ±20 V ID ±18 A ±72 35 (Tc = 25ºC) min 200 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V

2SK3002

Abstract: FM20
Contextual Info: 2SK3002 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 200 V V (BR)DSS VGSS ±20 V ID ±8 A ±32 30 (Tc = 25ºC) min 200 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V nA VGS = ±20V

2SK30

Abstract: 2SK3009 150-C84 F8S60VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3009 F8S60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 600V 8A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK3003 equivalent

Abstract: 2SK3003 FM20
Contextual Info: 2SK3003 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 200 V V(BR) DSS VGSS ±20 V ID ±18 A ±72 35 (Tc = 25ºC) min 200 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V

2SK3000

Contextual Info: 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z Previous ADE-208-585A (Z Rev.3.00 Jun.15.2004 Features • Low on-resistance RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK)

Contextual Info: Data Sheet 2SK3000 R07DS1134EJ0400 Rev.4.00 Jan 10, 2014 Silicon N Channel MOS FET Low Frequency Power Switching Features • Low on-resistance RDS on = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability

2SK3009

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3009 F8S60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

104 50k

Abstract: dc iris driver 2SK300 48-QFP-0707 clamp meter circuit diagram "Op Amp" IRIS KA7305 KDS226 KS7212 KSC1623
Contextual Info: KA7305 B/W CCD PROCESSOR GENERAL DESCRIPTION The KA7305 is a monolithic integrated circuit for B/W CCD camera 1 chip signal processor. It contains functional block from CDS to video driver and 2 comparators for EE mode. Also, it performs a low power onsumption and a small dimension of set implementation

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

dc iris driver

Abstract: CXA1310AQ dc iris drive cont QFP-32P-L01 2SC3355 2SK152 2SK300 32PIN PQFP32 sony linear ccd
Contextual Info: CXA1310AQ Single Chip Processing for CCD Monochrome Camera Description The CXA1310AQ is designed to perform the basic signal processing in CCD monochrome cameras with a single chip. This bipolar lC is most suitable for compact usage and low power consumption.

c4468 power transistor equivalent

Abstract: c5287 equivalent transistor c4381 power transistor equivalent SLA5096 transistor c5287 circuit diagram sla5212 B1560 equivalent c4131 equivalent transistor C4300 transistor pin out c3856
Contextual Info: Transistors 2 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 154 Application Note . 156