2SK1840 Search Results

2SK1840

Contextual Info: Ordering number: E N 4635 No.4635 I 2SK1840 N-Channel Enhancement MOS Silicon FET Analog Switch Applications Features • Large I Vfs I . • Enhancement type. • Low ON resistance. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage

EN4635

Abstract: 2SK1840
Contextual Info: Ordering number:EN4635 N-Channel Enhancement Silicon MOSFET 2SK1840 Analog Switch Applications Features Package Dimensions • Largeyfs. · Enhancement type. · Low ON resistance. unit:mm 2024B 0.4 3 0.5 [2SK1840] 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate

S3V40

Abstract: 2SK1840 ITR02014 C2016 ITR02015 ITR02016 ITR02017 ITR02018 ITR02019 ITR02021
Contextual Info: 注文コード No. N 4 6 3 5 2SK1840 No. N4635 81099 2SK1840 特長 N チャネルエンハンスメント MOS 形シリコン電界効果トランジスタ アナログスイッチ用 ・yfs が大きい。 ・エンハンスメントタイプである。

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SK2747

Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

audio amplifier POWER TRANSISTORS

Abstract: 2sc3807 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SB511 2SK1840 audio power amplifier
Contextual Info: Continued from previous page Absolute maximum ratings Package Device tSfP I Applications VCBO VCEO Ve» W V) « •C ; m w m I I Electrical characteristics (Tt = 25 ”C) i Icbo m u Vcb max (jiA) V » m [¡G B O *>FE # Vce *te I te hfE I Vce (mA) (V)

Contextual Info: • Discrete Devices for Video Cameras • Driver Devices for Optical Systems High-speed Switch Transistors Absolute maximum ratings Ta = 25°C Type No. Package Vc b o VCEO lC (V) 00 (A) 2SA1883 15 SMCP Switch time typ(ns) v CE(sat) h typ hFE (mW) 0.2 15